FastIRFET™ IRFH7184PbF HEXFET® Power MOSFET VDSS 100 V 4.8 m 36 nC Rg (typical) 1.2 ID (@TC (Bottom) = 25°C) 128 A RDS(on) max (@ VGS = 10V) Qg (typical) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active O-Ring BLDC Motor Drive Features Low RDS(ON) (< 4.8m) Internal Snubber Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg Tested Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1 Base part number Package Type IRFH7184PbF PQFN 5mm x 6 mm Benefits Lower Conduction Losses Reduced Vds Spike, Improved EMI Increased Power Density Increased Reliability results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH7184TRPbF Absolute Maximum Ratings Parameter VGS Gate-to-Source Voltage Max. Units ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 128 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 81 IDM Pulsed Drain Current 260 PD @TA = 25°C Power Dissipation 3.9 PD @TC(Bottom) = 25°C Power Dissipation 156 Linear Derating Factor 0.03 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range A W Notes through are on page 8 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 06, 2015 IRFH7184PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient VGS(th) IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. 100 ––– ––– 2.0 ––– ––– ––– ––– 117 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 54 4.0 ––– -5.4 ––– ––– ––– ––– 36 7.3 2.7 11 15 13.7 120 1.2 6.5 9.9 14 3.9 2320 1070 19 Max. ––– ––– 4.8 3.6 ––– 1.0 100 -100 ––– 54 ––– ––– ––– ––– ––– ––– 2.2 ––– ––– ––– ––– ––– ––– ––– Units V mV/°C m V mV/°C µA Min. ––– Typ. ––– Max. 128 Units ––– ––– 260 nA S nC nC Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 50A VDS = VGS, ID = 150µA VDS = 80V, VGS = 0V VGS = 20V VGS = -20V VDS = 25V, ID = 50A VDS = 50V VGS = 10V ID = 50A VDS = 50V, VGS = 0V ns VDD = 50V, VGS = 10V ID = 50A RG = 1.0 pF VGS = 0V VDS = 50V ƒ = 1.0MHz Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS= 50A, VGS=0V TJ = 25°C, IF = 50A, VDD = 50V di/dt = 100A/µs D A G S ––– ––– ––– 0.8 55 76 1.3 83 114 V ns nC Avalanche Characteristics Parameter EAS (Thermally limited) Single Pulse Avalanche Energy Avalanche Current IAR Typ. ––– Max. 360 Units mJ ––– 50 A Typ. ––– Max. 0.8 Units ––– 21 °C/W Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) RJA Junction-to-Ambient ––– 32 RJA (<10s) Junction-to-Ambient ––– 19 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 06, 2015 IRFH7184PbF 1000 1000 100 BOTTOM 100 4.5V 10 BOTTOM 4.5V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 1 0.1 1 10 100 0.1 1000 1 Fig 1. Typical Output Characteristics 1000 2.0 100 TJ = 150°C TJ = 25°C 10 1 V DS = 50V 60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 0.1 ID = 50A V GS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.5 2.5 3.5 4.5 5.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 V GS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED ID= 50A V GS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + Cgd 10000 C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Coss Ciss 1000 Crss 100 12.0 V DS= 80V V DS= 50V 10.0 V DS= 20V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 15V 10V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V www.irf.com © 2015 International Rectifier 0 5 10 15 20 25 30 35 40 45 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback January 06, 2015 IRFH7184PbF ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 100 TJ = 25°C 10 1msec OPERATION IN THIS AREA LIMITED BY RDS(on) 10 1 0.1 V GS = 0V 1.0 100µsec 100 10msec DC Tc = 25°C Tj = 150°C Single Pulse 0.01 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 V SD, Source-to-Drain Voltage (V) 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 140 4.5 V GS(th) , Gate threshold Voltage (V) 120 ID, Drain Current (A) 10 100 80 60 40 20 0 4.0 3.5 3.0 2.5 ID = 150µA ID = 250µA 2.0 ID = 1.0mA ID = 1.0A 1.5 25 50 75 100 125 150 -75 -50 -25 TC , Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 1 Thermal Response ( Z thJC ) °C/W D = 0.50 0.20 0.10 0.1 0.05 0.01 0.001 0.0001 1E-006 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 06, 2015 IRFH7184PbF Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) 1500 12 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) Fig 12. Typical Avalanche Current vs. Pulse Width ID = 50A 1250 10 1000 T J = 125°C 8 6 4 T J = 25°C 750 500 250 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 13. On–Resistance vs. Gate Voltage 5 ID TOP 13A 21A BOTTOM 50A www.irf.com © 2015 International Rectifier 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current Submit Datasheet Feedback January 06, 2015 IRFH7184PbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS DRIVER D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 19. Gate Charge Waveform Submit Datasheet Feedback January 06, 2015 IRFH7184PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 06, 2015 IRFH7184PbF PQFN 5x6 Outline "B" Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimension are nominal Package Type Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualifiction Information† Industrial (per JEDEC JESD47F†† guidelines) Qualification Level Moisture Sensitivity Level PQFN 5mm x 6mm MSL1 (per JEDEC J-STD-020D††) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 290µH, RG = 50, IAS = 50A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Revision History Date 01/06/2015 Comments FIg 8 SOA Curve is corrected — The label PW = 1msec and 10msec are switched—page 4. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 06, 2015