DMN2044UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID TA = +25°C t =10s 40mΩ @ VGS = 4.5V 4.5A 50mΩ @ VGS = 2.5V 4.2A 56mΩ @ VGS = 1.8V 4.0A 70mΩ @ VGS = 1.5V 1.5A BVDSS NEW PRODUCT 20V Features and Benefits Ultra Small 1.0mm x 1.0mm Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in ultra-small 1.0mm x 1.0mm package. Case: U-WLB1010-4 (Type B) Moisture Sensitivity: Level 1 per J-STD-020 Terminal: Finish —SnAgCu. Solderable per MIL-STD-202 Method 208 Terminal Connections: See Diagram Portable Applications Load Switch Power Management Functions Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMN2044UCB4-7 Notes: Case U-WLB1010-4 (Type B) Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information ZW = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E = 2017) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN2044UCB4 Document number: DS36818 Rev. 3 - 2 Mar 3 2018 F Apr 4 May 5 2019 G Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 Aug 8 2021 I Sep 9 Oct O 2022 J Nov N Dec D December 2017 © Diodes Incorporated DMN2044UCB4 Maximum Ratings Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Source Current @ VGS = 4.5V, t=10s (Note 5) Continuous Source Current @ VGS = 4.5V, t=10s (Note 6) TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Unit V V A 4.5 3.6 16 1.2 10 ID Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) Continuous Source-Drain Diode Current Pulse Diode Forward Current NEW PRODUCT Value 20 8 3.3 2.6 IDM IS ISM A A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RθJA RθJC PD RθJA TJ, TSTG Value 0.72 175 40 1.18 106 -55 to +150 Unit W °C/W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS — — — — — 1.0 1.0 100 V µA mA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V , TJ= +150°C VGS = 8V, VDS = 0V Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS 20 — — — VGS(TH) 0.4 — 0.9 V Static Drain-Source On-Resistance RDS(ON) — 29 32 36 43 40 50 56 70 mΩ |Yfs| VSD — — 5.9 0.7 — 1.2 S V Ciss Coss Crss Rg Qg Qg Qgs Qgd QRR tRR tA tB — — — — — — — — — — — — — — — — — — — — 1056 117 105 0.98 13.1 23.2 1.4 2.1 2.16 7.92 6.5 4.12 4.57 6.33 19.84 2.96 2.88 6.31 14.9 1.71 1400 160 140 1.5 26.5 47 — — 6 18 — — 10 15 42 6 6 14 30 4 pF pF pF Ω nC nC nC nC nC ns ns ns ns ns ns ns ns ns ns ns Forward Transfer Admittance Body Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Reverse Recovery Charge Body Diode Reverse Recovery Time Reverse Recovery Fall Time Reverse Recovery Rise Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(ON) tR tD(OFF) tF tD(ON) tR tD(OFF) tF VDS = VGS, ID = 250μA VGS = 4.5V, ID = 1.5A VGS = 2.5V, ID = 1.0A VGS = 1.8V, ID = 1.0A VGS = 1.5V, ID = 0.5A VDS = 10V, IS = 1.5A VGS = 0V, IS = 1.5A VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 1.5A IF = 1.5A, di/dt = 100A/μs VDD = 10V, ID = 1.5A VGEN = 4.5V, RG = 1Ω, RL = 6.7Ω VDD = 10V, ID = 1.5A VGEN = 8V, RG = 1Ω, RL = 6.7Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2044UCB4 Document number: DS36818 Rev. 3 - 2 2 of 7 www.diodes.com December 2017 © Diodes Incorporated DMN2044UCB4 10.0 10 VGS = 8V VDS = 5.0V 9.0 9 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS = 4.0V 7.0 )A ( T N E R R U C N IA R D ,D I VGS = 3.0V VGS = 2.5V 6.0 VGS = 2.0V 5.0 VGS = 1.8V VGS = 1.5V 4.0 3.0 VGS = 1.2V 2.0 7 6 TA = 150°C 5 TA = 125°C 4 TA = 85°C 3 TA = 25°C 2 TA = -55°C 1 1.0 VGS = 1.0V 0 0.0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 3 0.06 0.05 VGS = 1.5V 0.04 VGS = 1.8V VGS = 2.5V 0.03 VGS = 4.5V 0.02 0.01 0 1 2 3 4 5 6 7 8 9 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0.5 1 1.5 2 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2.5 0.08 0.07 ID = 500mA 0.06 ID = 1.5A 0.05 ID = 1.0A 0.04 0.03 0.02 0 10 1.6 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 8 1.2 )V ( E G A T L O V D L O H S E R H T E T A G , )h VGS(TH), GATE THRESHOLD VOLTAGE (V) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 8.0 VGS = 4.5V ID = 2.0A 1.2 VGS = 2.5V ID = 1.0A 0.8 (tS G 1 0.8 ID = 1mA 0.6 ID = 250µA 0.4 0.2 V 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 5 On-Resistance Variation with Temperature DMN2044UCB4 Document number: DS36818 Rev. 3 - 2 3 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (C) Figure 6 Gate Threshold Variation vs. Junction Temperature 150 December 2017 © Diodes Incorporated DMN2044UCB4 10 Ciss 1000 Coss 100 Crss 10 8 VDS = 10V ID = 1.5A 6 4 2 f = 1MHz 1 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 7 Typical Junction Capacitance 20 100 350 ) 10 A ( T N E R R U 1 C N I A R D ,D -I 0.1 300 250 200 150 100 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 8 Gate Charge 25 RDS(ON) Limited DC PW = 10s PW = 1s PW = 100ms PW = 10ms TJ(max) = 150°C PW = 1ms TA = 25°C PW = 100µs VGS = 4.5V Single Pulse DUT on 1 * MRP Board 50 1 10 0 10 00 10 00 0 1 0. 10 0. 01 0 -0 5 0. 00 01 0. 00 1 0 Single Pulse R JA = 175C/W R JA(t) = r(t) * R JA T J - T A = P * R JA(t) ID, DRAIN CURRENT (A) P(PK) , PEAK TRANSIENT POIWER (W) POWER(W) TRANSIENT P(PK) , PEAK 400 1E NEW PRODUCT VGS GATE THRESHOLD VOLTAGE (V) C T, JUNCTION CAPACITANCE (pF) 10000 t1, PULSE DURATION TIME (sec) Figure 9 Single Pulse Maximum Power Dissipation DMN2044UCB4 Document number: DS36818 Rev. 3 - 2 4 of 7 www.diodes.com 0.01 0.1 1 10 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 10 SOA, Safe Operation Area 100 December 2017 © Diodes Incorporated DMN2044UCB4 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA 175°C/W RJA = 175癈 /W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 DMN2044UCB4 Document number: DS36818 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, (sec) t1,PULSE PULSEDURATION DURATIONTIMES TIME (sec) Figure 11 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 December 2017 © Diodes Incorporated DMN2044UCB4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-WLB1010-4 (Type B) Pin1 1 2 2 A A NEW PRODUCT b(4x) U-WLB1010-4 (Type B) Dim Min Max Typ A 0.4535 0.5565 0.5050 A1 0.2115 0.2585 0.2350 A2 0.2200 0.2700 0.2450 A3 0.0220 0.0280 0.0250 b 0.2880 0.3520 0.3200 D 1.030 1.050 1.040 e 0.500 BSC E 1.030 1.050 1.040 All Dimensions in mm e E B 1 B D A3 A2 A1 A Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-WLB1010-4 (Type B) X(4x) Dimensions C C X Value (in mm) 0.500 0.3200 C DMN2044UCB4 Document number: DS36818 Rev. 3 - 2 6 of 7 www.diodes.com December 2017 © Diodes Incorporated DMN2044UCB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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