DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED V(BR)DSS Features and Benefits ID TA = +25°C RDS(ON) Max 16mΩ @ VGS = 10V 8.3A 18mΩ @ VGS = 6.0V 7.9A 100V 100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) performance. This device is ideal for use in notebook battery power management and loadswitch. Backlighting Power Management Functions DC-DC Converters SO-8 S D S D S D G D D G Top View Internal Schematic Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMT10H015LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking T1015LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 15 = 2015) WW = Week (01 - 53) T1015LS YY WW 1 DMT10H015LSS Document number: DS38046 Rev. 3 - 2 4 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C Value 100 ±20 8.3 6.7 3 54 7.5 85 Units V V Value 1.2 100 1.67 75 12 -55 to +150 Units W °C/W W °C/W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Note 8) L = 3mH Avalanche Energy (Note 8) L = 3mH IS IDM IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Symbol PD RθJA PD RθJA RθJC TJ, TSTG Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS(ON) VSD 2.0 14 15 17 0.9 3.0 16 18 25 1.3 V Static Drain-Source On-Resistance 1.4 — — — — VDS = VGS, ID = 250µA VGS = 10V, ID = 20A VGS = 6.0V, ID = 20A VGS = 4.5V, ID = 5A VGS = 0V, IS = 20A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — 1,871 261 6.9 0.75 33.3 6.9 5.1 6.5 7.0 19.7 8.1 37.9 51.9 — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 50V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 10A, VGS = 10V nS VDD = 50V, VGS = 10V, ID = 10A, RG = 6Ω nS nC IF = 10A, di/dt = 100A/µs 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT10H015LSS Document number: DS38046 Rev. 3 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LSS 30 30 VGS = 10.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 5.0V 20 VGS = 4.5V 15 VDS = 5.0V 25 VGS = 6.0V VGS = 4.0V 10 VGS = 3.5V 20 15 T A = 150C 10 T A = 125 C TA = 85 C T A = 25 C 5 5 T A = -55 C VGS = 3.0V 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.02 VGS = 4.5V 0.015 VGS = 6V 0.005 VGS = 10V 0 5 10 15 20 25 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.025 0.01 1.5 3 30 R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 0.05 I D = 20A 0.04 0.03 0.02 ID = 5A 0.01 0 0 ID, DRAIN CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.03 5 10 15 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 1.8 VGS = 10V TA = 150 C VGS = 6V 0.025 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED 25 TA = 125C 0.02 TA = 85 C 0.015 T A = 25 C 0.01 T A = -55C 0.005 ID = 20A 1.6 1.4 1.2 VGS = 10V ID = 20A VGS = 4.5V 1 ID = 5A 0.8 0 0 5 10 15 20 25 ID , DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Junction Temperature DMT10H015LSS Document number: DS38046 Rev. 3 - 2 30 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature 3 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LSS VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE O N-RESISTANCE () 2.6 VGS = 4.5V 0.03 ID = 5A VGS = 6V I D = 20A 0.02 VGS = 10V ID = 20A 0.01 I D = 1mA 2.2 2 ID = 250µA 1.8 1.6 1.4 1.2 T A= 150 C 20 T A= 25C T A= 125 C 15 T A= 85C -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 CT , JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 25 10 2.4 1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Junction Temperature 30 T A= -55 C 5 Ciss 1000 C oss 100 10 Crss f = 1MHz 0 1 0 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 1.5 10 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 50 100 RDS(on) Limited 8 VDS = 50V 6 ID = 10A 4 ID , DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED 0.04 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 PW = 10ms 2 PW = 1ms PW = 100µs 0 0 5 10 15 20 25 30 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMT10H015LSS Document number: DS38046 Rev. 3 - 2 0.01 0.01 4 of 7 www.diodes.com 1 100 0.1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 1000 November 2015 © Diodes Incorporated DMT10H015LSS 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 R JA(t) = r(t) * RJA D = 0.005 R JA = 92°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance DMT10H015LSS Document number: DS38046 Rev. 3 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LSS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version 0.254 NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED SO-8 E1 E SO-8 Dim Min Max A — 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h — 0.35 L 0.62 0.82 0° 8° All Dimensions in mm Gauge Plane Seating Plane A1 L Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMT10H015LSS Document number: DS38046 Rev. 3 - 2 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LSS IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMT10H015LSS Document number: DS38046 Rev. 3 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated