Infineon IPP65R095C7 Metal oxide semiconductor field effect transistor Datasheet

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
650VCoolMOS™C7PowerTransistor
IPP65R095C7
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
650VCoolMOS™C7PowerTransistor
IPP65R095C7
1Description
TO-220
tab
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2, tab
Gate
Pin 1
Source
Pin 3
Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
95
mΩ
Qg.typ
45
nC
ID,pulse
100
A
Eoss@400V
5.5
µJ
Body diode di/dt
60
A/µs
Type/OrderingCode
Package
Marking
IPP65R095C7
PG-TO 220
65C7095
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current 1)
Values
Unit
Note/TestCondition
24
15
A
TC=25°C
TC=100°C
-
100
A
TC=25°C
-
-
118
mJ
ID=8.4A; VDD=50V; see table 10
EAR
-
-
0.59
mJ
ID=8.4A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
8.4
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
128
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
60
Ncm M3 and M3.5 screws
Continuous diode forward current
IS
-
-
24
A
TC=25°C
Diode pulse current2)
IS,pulse
-
-
100
A
TC=25°C
Reverse diode dv/dt 3)
dv/dt
-
-
1.5
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
60
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Insulation withstand voltage
VISO
-
-
n.a.
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current 2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
1)
Limited by Tj max.
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
4
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
0.98
°C/W -
Thermal resistance, junction - ambient
RthJA
-
-
62
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
-
260
°C
Final Data Sheet
5
1.6mm (0.063 in.) from case for
10s
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.5
4
V
VDS=VGS,ID=0.59mA
-
10
1
-
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.084
0.202
0.095
-
Ω
VGS=10V,ID=11.8A,Tj=25°C
VGS=10V,ID=11.8A,Tj=150°C
Gate resistance
RG
-
0.9
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
650
-
Gate threshold voltage
V(GS)th
3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
2140
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
33
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related 1)
Co(er)
-
69
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time related
Co(tr)
-
763
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
14
-
ns
VDD=400V,VGS=13V,ID=11.8A,
RG=5.3Ω;seetable9
Rise time
tr
-
12
-
ns
VDD=400V,VGS=13V,ID=11.8A,
RG=5.3Ω;seetable9
Turn-off delay time
td(off)
-
60
-
ns
VDD=400V,VGS=13V,ID=11.8A,
RG=5.3Ω;seetable9
Fall time
tf
-
7
-
ns
VDD=400V,VGS=13V,ID=11.8A,
RG=5.3Ω;seetable9
Unit
Note/TestCondition
2)
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
12
-
nC
VDD=400V,ID=11.8A,VGS=0to10V
Gate to drain charge
Qgd
-
15
-
nC
VDD=400V,ID=11.8A,VGS=0to10V
Gate charge total
Qg
-
45
-
nC
VDD=400V,ID=11.8A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=400V,ID=11.8A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
6
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=11.8A,Tj=25°C
800
-
ns
VR=400V,IF=24A,diF/dt=60A/µs;
see table 8
-
9
-
µC
VR=400V,IF=24A,diF/dt=60A/µs;
see table 8
-
25
-
A
VR=400V,IF=24A,diF/dt=60A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
7
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
103
140
120
100 µs
102
10 µs
1 µs
1 ms
10 ms
100
DC
80
ID[A]
Ptot[W]
101
100
60
10-1
40
10-2
20
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
2
10
100 µs
10 µs
Diagram4:Max.transientthermalimpedance
1 µs
100
1 ms
10 ms
101
0.5
DC
0.2
ID[A]
ZthJC[K/W]
100
-1
10
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-3
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
110
70
20 V
100
20 V
10 V
8V
90
10 V
60
8V
7V
80
50
7V
6V
40
60
ID[A]
ID[A]
70
50
30
5.5 V
40
6V
30
5V
20
5.5 V
10
0
20
10
4.5 V
5V
4.5 V
0
5
10
15
0
20
0
5
10
VDS[V]
15
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
0.35
0.24
6.5 V
6V
0.33
7V
20 V
0.22
0.31
10 V
0.20
0.29
0.18
0.27
0.16
RDS(on)[Ω]
RDS(on)[Ω]
5.5 V
0.25
0.23
0.14
0.10
0.19
0.08
0.17
0.06
0
10
20
30
40
50
60
70
98%
0.12
0.21
0.15
20
VDS[V]
0.04
-50
typ
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=11.8A;VGS=10V
9
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
120
12
120 V
100
10
25 °C
8
VGS[V]
ID[A]
80
60
150 °C
6
40
4
20
2
0
400 V
0
2
4
6
8
10
0
12
0
10
20
VGS[V]
30
40
50
60
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=11.8Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
120
110
100
90
125 °C
80
25 °C
IF[A]
EAS[mJ]
101
100
70
60
50
40
30
20
10
10-1
0.0
0.5
1.0
1.5
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=8.4A;VDD=50V
10
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
105
760
740
104
720
Ciss
700
C[pF]
VBR(DSS)[V]
103
680
660
102
Coss
640
620
101
600
Crss
580
-60
-20
20
60
100
140
180
100
0
100
200
Tj[°C]
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
8
7
6
Eoss[µJ]
5
4
3
2
1
0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
td(off)
tr
ton
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
7PackageOutlines
Figure1OutlinePG-TO220,dimensionsinmm/inches
Final Data Sheet
13
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
8AppendixA
Table11RelatedLinks
• IFXCoolMOSTMC7Webpage:www.infineon.com
• IFXCoolMOSTMC7applicationnote:www.infineon.com
• IFXCoolMOSTMC7simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
14
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R095C7
RevisionHistory
IPP65R095C7
Revision:2013-10-11,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2013-10-11
Release of final version
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
[email protected]
Edition2011-08-01
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2011InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
15
Rev.2.0,2013-10-11
Similar pages