BZT52-V-G-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23 series. • The zener voltages are graded according to the international E 24 standard. • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 9.4 mg Packaging codes/options: 18/10 k per 13 " reel (8 mm tape), 10 k/box 08/3 k per 7 " reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Ptot 500 2) mW Ptot 1) mW Value Unit Zener current see table " Characteristics " Power dissipation Power dissipation 1) mm2 Diode on ceramic substrate 0.7 mm; 2.5 2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas 410 pad areas Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Symbol RthJA 300 1) °C/W Junction temperature TJ 150 °C Storage temperature range TS - 65 to + 150 °C 1) Valid provided that electrodes are kept at ambient temperature ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number 83340 Rev. 1.1, 26-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BZT52-V-G-Series Vishay Semiconductors Electrical Characteristics Zener voltage range1) Part number VZ at IZT1 Marking code Dynamic resistance rzj at IZT1 rzj at IZT2 Ω V Test current Temp. coefficient Reverse voltage Admissible Zener current4) IZT1 at IZT1 VR at IR = 100 nA IZ at Tamb = 45 °C mA αVZ (10-4/°C) V IZ at Tamb = 25 °C mA min. max. BZT52C2V4-V-G Y1 2.2 2.6 85 600 5 - 9 to - 4 - - - BZT52C2V7-V-G Y2 2.5 2.9 75 (< 83) < 500 5 - 9 to - 4 - 113 134 BZT52C3V0-V-G Y3 2.8 3.2 80 (< 95) < 500 5 - 9 to - 3 - 98 118 BZT52C3V3-V-G Y4 3.1 3.5 80 (< 95) < 500 5 - 8 to - 3 - 92 109 BZT52C3V6-V-G Y5 3.4 3.8 80 (< 95) < 500 5 - 8 to - 3 - 85 100 BZT52C3V9-V-G Y6 3.7 4.1 80 (< 95) < 500 5 - 7 to - 3 - 77 92 BZT52C4V3-V-G Y7 4 4.6 80 (< 95) < 500 5 - 6 to - 1 - 71 84 BZT52C4V7-V-G Y8 4.4 5 70 (< 78) < 500 5 - 5 to + 2 - 64 76 BZT52C5V1-V-G Y9 4.8 5.4 30 (< 60) < 480 5 - 3 to + 4 > 0.8 56 67 BZT52C5V6-V-G YA 5.2 6 10 (< 40) < 400 5 - 2 to + 6 >1 50 59 BZT52C6V2-V-G YB 5.8 6.6 4.8 (< 10) < 200 5 - 1 to + 7 >2 45 54 BZT52C6V8-V-G YC 6.4 7.2 4.5 (< 8) < 150 5 + 2 to + 7 >3 41 49 BZT52C7V5-V-G YD 7 7.9 4 (< 7) < 50 5 + 3 to + 7 >5 37 44 BZT52C8V2-V-G YE 7.7 8.7 4.5 (< 7) < 50 5 + 4 to + 7 >6 34 40 BZT52C9V1-V-G YF 8.5 9.6 4.8 (< 10) < 50 5 + 5 to + 8 >7 30 36 BZT52C10-V-G YG 9.4 10.6 5.2 (< 15) < 70 5 + 5 to + 8 > 7.5 28 33 BZT52C11-V-G YH 10.4 11.6 6 (< 20) < 70 5 + 5 to + 9 > 8.5 25 30 BZT52C12-V-G YI 11.4 12.7 7 (< 20) < 90 5 + 6 to + 9 >9 23 28 BZT52C13-V-G YK 12.4 14.1 9 (< 25) < 110 5 + 7 to + 9 > 10 21 25 BZT52C15-V-G YL 13.8 15.6 11 (< 30) < 110 5 + 7 to + 9 > 11 19 23 BZT52C16-V-G YM 15.3 17.1 13 (< 40) < 170 5 + 8 to + 9.5 > 12 17 20 BZT52C18-V-G YN 16.8 19.1 18 (< 50) < 170 5 + 8 to + 9.5 > 14 15 18 BZT52C20-V-G YO 18.8 21.2 20 (< 50) < 220 5 + 8 to + 10 > 15 14 17 BZT52C22-V-G YP 20.8 23.3 25 (< 55) < 220 5 + 8 to + 10 > 17 13 16 BZT52C24-V-G YR 22.8 25.6 28 (< 80) < 220 5 + 8 to + 10 > 18 11 13 BZT52C27-V-G YS 25.1 28.9 30 (< 80) < 250 5 + 8 to + 10 > 20 10 12 BZT52C30-V-G YT 28 32 35 (< 80) < 250 5 + 8 to + 10 > 22.5 9 10 BZT52C33-V-G YU 31 35 40 (< 80) < 250 5 + 8 to + 10 > 25 8 9 BZT52C36-V-G YW 34 38 40 (< 90) < 250 5 + 8 to + 10 > 27 8 9 BZT52C39-V-G YX 37 41 50 (< 90) < 300 5 + 10 to + 12 > 29 7 8 BZT52C43-V-G YY 40 46 60 (< 100) < 700 5 + 10 to + 12 > 32 6 7 BZT52C47-V-G YZ 44 50 70 (< 100) < 750 5 + 10 to + 12 > 35 5 6 BZT52C51-V-G Z1 48 54 70 (< 100) < 750 5 + 10 to + 12 > 38 5 6 BZT52C56-V-G Z2 52 60 < 135 2) < 1000 3) 2.5 typ. + 10 2) - - - BZT52C62-V-G Z3 58 66 < 150 2) < 1000 3) 2.5 typ. + 10 2) - - - < 200 2) < 1000 3) typ. + 10 2) - - - < 250 2) < 1500 3) typ. + 10 2) - - - BZT52C68-V-G BZT52C75-V-G Z4 Z5 64 70 72 79 2.5 2.5 IZT1 = 5 mA, IZT2 = 1 mA 1) Measured with pulses Tp = 5 ms 2) = IZT1 = 2.5 mA 3) = IZT2 = 0.5 mA 4) Valid provided that electrodes are kept at ambient temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 83340 [email protected], [email protected], [email protected] Rev. 1.1, 26-Aug-10 BZT52-V-G-Series Vishay Semiconductors Electrical Characteristics Zener voltage range1) Part number Marking code VZ at IZT1 Dynamic resistance rzj at IZT1 rzj at IZT2 Ω V Test current Temp. coefficient Reverse voltage Admissible Zener current 4) IZT1 at IZT1 VR at IR = 100 nA IZ at Tamb = 45 °C mA αVZ (10-4/°C) V IZ at Tamb = 25 °C mA min. max. BZT52B2V4-V-G V1 2.35 2.45 85 600 5 - 9 to - 4 - - - BZT52B2V7-V-G V2 2.65 2.75 75 (< 83) < 500 5 - 9 to - 4 - 113 134 BZT52B3V0-V-G V3 2.94 3.06 80 (< 95) < 500 5 - 9 to - 3 - 98 118 BZT52B3V3-V-G V4 3.23 3.37 80 (< 95) < 500 5 - 8 to - 3 - 92 109 BZT52B3V6-V-G V5 3.53 3.67 80 (< 95) < 500 5 - 8 to - 3 - 85 100 BZT52B3V9-V-G V6 3.82 3.98 80 (< 95) < 500 5 - 7 to - 3 - 77 92 BZT52B4V3-V-G V7 4.21 4.39 80 (< 95) < 500 5 - 6 to - 1 - 71 84 BZT52B4V7-V-G V8 4.61 4.79 70 (< 78) < 500 5 - 5 to + 2 - 64 76 BZT52B5V1-V-G V9 5 5.2 30 (< 60) < 480 5 - 3 to + 4 > 0.8 56 67 BZT52B5V6-V-G VA 5.49 5.71 10 (< 40) < 400 5 - 2 to + 6 >1 50 59 BZT52B6V2-V-G VB 6.08 6.32 4.8 (< 10) < 200 5 - 1 to + 7 >2 45 54 BZT52B6V8-V-G VC 6.66 6.94 4.5 (< 8) < 150 5 + 2 to + 7 >3 41 49 BZT52B7V5-V-G VD 7.35 7.65 4 (< 7) < 50 5 + 3 to + 7 >5 37 44 BZT52B8V2-V-G VE 8.04 8.36 4.5 (< 7) < 50 5 + 4 to + 7 >6 34 40 BZT52B9V1-V-G VF 8.92 9.28 4.8 (< 10) < 50 5 + 5 to + 8 >7 30 36 BZT52B10-V-G VG 9.8 10.2 5.2 (< 15) < 70 5 + 5 to + 8 > 7.5 28 33 BZT52B11-V-G VH 10.8 11.2 6 (< 20) < 70 5 + 5 to + 9 > 8.5 25 30 BZT52B12-V-G VI 11.8 12.2 7 (< 20) < 90 5 + 6 to + 9 >9 23 28 BZT52B13-V-G VK 12.7 13.3 9 (< 25) < 110 5 + 7 to + 9 > 10 21 25 BZT52B15-V-G VL 14.7 15.3 11 (< 30) < 110 5 + 7 to + 9 > 11 19 23 BZT52B16-V-G VM 15.7 16.3 13 (< 40) < 170 5 + 8 to + 9.5 > 12 17 20 BZT52B18-V-G VN 17.6 18.4 18 (< 50) < 170 5 + 8 to + 9.5 > 14 15 18 BZT52B20-V-G VO 19.6 20.4 20 (< 50) < 220 5 + 8 to + 10 > 15 14 17 BZT52B22-V-G VP 21.6 22.4 25 (< 55) < 220 5 + 8 to + 10 > 17 13 16 BZT52B24-V-G VR 23.5 24.5 28 (< 80) < 220 5 + 8 to + 10 > 18 11 13 BZT52B27-V-G VS 26.5 27.5 30 (< 80) < 250 5 + 8 to + 10 > 20 10 12 BZT52B30-V-G VT 29.4 30.6 35 (< 80) < 250 5 + 8 to + 10 > 22.5 9 10 BZT52B33-V-G VU 32.3 33.7 40 (< 80) < 250 5 + 8 to + 10 > 25 8 9 BZT52B36-V-G VW 35.3 36.7 40 (< 90) < 250 5 + 8 to + 10 > 27 8 9 BZT52B39-V-G VX 38.2 39.8 50 (< 90) < 300 5 + 10 to + 12 > 29 7 8 BZT52B43-V-G VY 42.1 43.9 60 (< 100) < 700 5 + 10 to + 12 > 32 6 7 BZT52B47-V-G VZ 46.1 47.9 70 (< 100) < 750 5 + 10 to + 12 > 35 5 6 BZT52B51-V-G U1 50 52 70 (< 100) < 750 5 + 10 to + 12 > 38 5 6 BZT52B56-V-G U2 54.9 57.1 < 135 2) < 1000 3) 2.5 typ. + 10 2) - - - BZT52B62-V-G U3 60.8 63.2 < 150 2) < 1000 3) 2.5 typ. + 10 2) - - - < 200 2) < 1000 3) typ. + 10 2) - - - < 250 2) < 1500 3) typ. + 10 2) - - - BZT52B68-V-G BZT52B75-V-G U4 U5 66.6 73.5 69.4 76.5 2.5 2.5 IZT1 = 5 mA, IZT2 = 1 mA 1) Measured with pulses Tp = 5 ms 2) = IZT1 = 2.5 mA 3) = IZT2 = 0.5 mA 4) Valid provided that electrodes are kept at ambient temperature Document Number 83340 Rev. 1.1, 26-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BZT52-V-G-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) mA 103 1000 102 IF 10 rzj TJ = 100 °C 1 TJ = 25 °C 5 4 3 2 100 10-1 5 4 3 TJ = 25 °C 2 10-2 100 10-3 2.7 3.6 4.7 5.1 5 4 3 10-4 2 10-5 0 5.6 1 0.2 0.4 0.6 0.8 1V 0.1 VF 18114 2 5 1 2 5 10 18117 Figure 1. Forward Characteristics 2 5 100 mA IZ Figure 4. Dynamic Resistance vs. Zener Current pF 1000 mW 500 TJ = 25 °C 7 400 5 4 Ctot VR = 1 V 3 Ptot VR = 2 V 2 300 100 VR = 1 V 7 200 5 4 3 100 VR = 2 V 2 0 10 0 100 1 200 °C Tamb 18888 Figure 2. Admissible Power Dissipation vs. Ambient Temperature RthA 100 V 3 4 5 TJ = 25 °C 0.2 0.1 rzj 0.05 0.02 0.01 10 V=0 33 2 27 22 18 15 5 4 tp 2 1 10-5 3 10 7 5 4 3 12 3 tp T 10 2 PI 6.8/8.2 T 6.2 1 10-4 10-3 10-2 10-1 1 10s tp Figure 3. Pulse Thermal Resistance vs. Pulse Duration 4 2 VZ at IZ = 5 mA 5 4 0.5 7 5 4 3 2 www.vishay.com 10 4 5 Ω 100 102 18116 3 Figure 5. Capacitance vs. Zener Voltage °C/W 103 7 5 4 3 2 2 18118 0.1 18119 2 5 1 2 5 10 IZ 2 5 100 mA Figure 6. Dynamic Resistance vs. Zener Current For technical questions within your region, please contact one of the following: Document Number 83340 [email protected], [email protected], [email protected] Rev. 1.1, 26-Aug-10 BZT52-V-G-Series Vishay Semiconductors Ω 103 5 4 Rzj mV/°C 25 Tj = 25 °C 7 Δ VZ ΔTj 47 + 51 43 39 36 3 2 20 IZ = 15 5 mA 1 mA 20 mA 10 102 7 5 4 3 5 0 2 -5 10 0.1 2 3 4 5 1 18120 2 3 4 5 IZ Figure 7. Dynamic Resistance vs. Zener Current 2 3 10 4 5 2 Figure 10. Temperature Dependence of Zener Voltage vs. Zener Voltage 0.8 Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 25 0.7 VZ at IZ = 5 mA 15 10 0.6 Δ VZ 102 0.5 8 0.4 5 4 3 7 0.3 2 0.2 6.2 5.9 10 0.1 5.6 5 4 3 0 negative 2 positive 5.1 -1 1 2 3 4 5 10 18121 2 3 4 5 0 100 V Figure 8. Thermal Differential Resistance vs. Zener Voltage 20 40 60 100 120 140 C 80 18124 VZ at IZ = 5 mA 4.7 3.6 - 0.2 1 Tj Figure 11. Change of Zener Voltage vs. Junction Temperature Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj 100 V 3 4 5 VZ at IZ = 5 mA V ≥ 27 V, I = 2 mA 18135 V Ω 103 Rzth 1 10 mA Δ VZ ΔTj 3 2 80 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 18122 4 5 10 2 3 4 5 100 V VZ Figure 9. Dynamic Resistance vs. Zener Voltage Document Number 83340 Rev. 1.1, 26-Aug-10 0 0 18136 20 40 60 80 100 V VZ at IZ = 2 mA Figure 12. Temperature Dependence of Zener Voltage vs. Zener Voltage For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 BZT52-V-G-Series Vishay Semiconductors mA 50 Tj = 25 °C 3.9 5.6 2.7 6.8 3.3 4.7 40 lZ 8.2 30 20 Test current IZ 5 mA 10 0 0 18158 1 2 3 4 5 Figure 13. Change of Zener Voltage vs. Junction Temperature 6 7 8 9 10 V VZ 18111 Figure 16. Breakdown Characteristics mA 30 lZ 10 12 Tj = 25 °C 15 20 18 22 27 Test 10 current IZ 5 mA 33 36 0 0 18159 18112 Figure 14. Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage V 5 10 20 30 40 V VZ Figure 17. Breakdown Characteristics ΔVZ = rzth x IZ 4 Δ VZ 3 IZ = 5 mA 2 1 IZ = 2.5 mA 0 0 18160 20 40 60 80 100 V VZ at IZ = 5 mA Figure 15. Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number 83340 [email protected], [email protected], [email protected] Rev. 1.1, 26-Aug-10 BZT52-V-G-Series Vishay Semiconductors 18157 Figure 18. Breakdown Characteristics 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. Package Dimensions in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Document Number 83340 Rev. 1.1, 26-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000