Renesas CY25CAJ-8F Nch igbt for strobe flash Datasheet

CY25CAJ-8F
Nch IGBT for Strobe Flash
REJ03G1202-0200
Preliminary
Rev.2.00
May 24, 2005
Features
•
•
•
•
Ultra small surface mount package (VSON-8)
VCES: 400 V
ICM: 150 A
Drive voltage: 4 V
Outline
PVSN0008JA-A
(Package Name: VSON-8<TNP-8DBV>)
8
5
7
6
5
1, 2 : Emitter
3 : Emitter
(for the gate drive)
4 : Gate
5, 6, 7, 8 : Collector
8
4
1
Note:
1
2
3
4
PIN 3 is for the Gate drive only.
Note that current from the main circuit cannot flow into this section. (Please see page 3)
Applications
Strobe flash for cameras
Maximum Ratings
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Symbol
VCES
VGES
VGEM
Ratings
400
±6
±8
Unit
V
V
V
ICM
150
A
Tj
Tstg
– 40 to +150
– 40 to +150
°C
°C
Collector current (Pulse)
Junction temperature
Storage temperature
Rev.2.00,
May 25, 2005,
page 1 of 4
Conditions
VGE = 0 V
VCE = 0 V
VCE = 0 V, tw = 10 s
CM = 400 µF
(see performance curve)
CY25CAJ-8F
Electrical Characteristics
(Tj = 25°C)
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-Emitter saturation voltage
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
Min.
450
—
—
0.5
—
Typ.
—
—
—
0.7
4.0
Max.
—
10
±10
1.5
6.0
Unit
V
µA
µA
V
V
Test conditions
IC = 1 mA, VGE = 0 V
VCE = 400 V, VGE = 0 V
VGE = ±8 V, VCS = 0 V
VCE = 10 V, IC = 1 mA
IC = 150 A, VGE = 4 V
Cies
—
3400
—
pF
VCE = 25 V, VGE = 10 V,
f = 1MHz
Input capacitance
Performance Curves
Pulse Collector Current ICP (A)
Maximum Collector Current vs.
Gate - Emitter Voltage
200
TC = 70°C
CM = 400 µF
RG = 30 Ω
150
100
50
0
0
Rev.2.00,
May 25, 2005,
page 2 of 4
2
4
6
8
Gate - Emitter Voltage VGE (V)
CY25CAJ-8F
Application Example
VCM
Trigger Transformer
CM
8
+
–
Xe Tube
7
6
5
VGG
Control Signal
1
VCM
2
3
4
RD5CYD08
RD5CYDT08
(IGBT Drive IC)
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
ICP
130 A
150 A
CM
300 µF
400 µF
VGE
5V
4V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 400 V/ µs. In general, when RG (off) = 30 Ω, it is satisfied.
3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a
large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large
currents since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A :
full luminescence condition) of main capacitor. (CM = 400 µF) Repetition period under full luminescence
condition is over 3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V.
Rev.2.00,
May 25, 2005,
page 3 of 4
CY25CAJ-8F
Package Dimensions
JEITA Package Code
P-VSON8-3x4.4-0.65
RENESAS Code
PVSN0008JA-A
Package Name
TNP-8DBV
MASS[Typ.]
0.032g
D
Lp
L1
1.95 ± 0.1
E
HE
0.15MAX
Reference
Symbol
c
Dimension in Millimeters
Min
Nom
Max
D
2.90
3.00
3.10
E
4.30
4.40
A
b
0.25
0.30
e
0.65
Lp
0.35
x
e
b
M
c
y
0.40
0.08
y
x
4.50
0.95
A
0.10
0.09
0.15
0.25
HE
4.70
4.80
4.90
L1
0.10
0.20
0.30
Order Code
Lead form
Surface-mounted type
Standard packing
Taping
Quantity
3000
Standard order code
Type name – T +Direction (1 or 2)+3
Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
May 25, 2005,
page 4 of 4
Standard order
code example
CY25CAJ-8F-T13
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