Jiangsu ESDU5V0H4 Uni-direction esd protection array Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate Diodes
ESDU5V0H4
Uni-direction ESD Protection Array
DESCRIPTION
SOT-23-6L
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, low capacitance, and fast
response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection
makes them a flexible solution for applications such as HDMI, Display Port TM, and
MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer
equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES

Uni-directional ESD protection of four lines

Excellent package:2.92mm×1.60mm×1.10mm

Low capacitance: 0.8pF(max)

Fast response time

Low reverse stand−off voltage: 5V

JESD22-A114-B ESD Rating of class 3B per human

Low reverse clamping voltage

Low leakage current
body model

IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS

Computers and peripherals

PDA

Audio and video equipment

High Definition Multi-Media Interface (HDMI)

High speed data lines

Digital Visual Interface (DVI)

Cell phone

Other electronics equipments

MID
communication systems
MARKING
U5H4 = Device code
Solid dot=Pin1 indicator
Front side
Front side
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CHANGJIANG ELEC.TECH.
ESDU5V0H4
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
IEC 61000-4-2 ESD Voltage(I/O to GND & VCC to GND)
Air Model
Contact Model
JESD22-A114-B ESD Voltage(I/O to GND & VCC to GND)
Per Human Body Model
ESD Voltage(I/O to GND & VCC to GND)
VESD(1)
±25
±16
kV
±0.4
(2)
125
W
(2)
5
A
PPP
Peak Pulse Current
Unit
±25
Machine Model
Peak Pulse Power
Limit
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Tstg
-55 ~ +150
℃
Storage Temperature Range
(1).Device stressed with ten non-repetitive ESD pulses, Per channel(I/O to GND).
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0~249
1
2
1
2
2
4
2
4
1A
1B
1C
250~499
500~999
1000~1999
3
6
3
8
4
8
4
15
2
3A
3B
2000~3999
4000~7999
8000~15999
ESD pulse waveform according to IEC61000-4-2
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8/20μs pulse waveform according to IEC 61000-4-5
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CHANGJIANG ELEC.TECH.
ESDU5V0H4
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
VF
Forward Voltage@ IF
IF
Forward Current
V-I characteristics for a uni-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
5
V
Per channel(I/O to GND unless otherwise specified)
Reverse stand off voltage
Breakdown voltage
(1 )
VRWM
V(BR)
Reverse leakage current
IR
Forward voltage
VF
IT=1mA
6.5
8.8
V
IT=1mA VCC to GND
5.8
8.1
V
1
μA
1.0
V
15
V
25
V
0.8
pF
0.4
pF
VRWM=5V
(I/O to GND & VCC to GND)
IF=10mA
(I/O to GND & VCC to GND)
0.5
IPP=1A
Clamping voltage
(2)
VC
(I/O to GND & VCC to GND)
IPP=5A
(I/O to GND & VCC to GND)
Junction capacitance
CJ
VR=0V,f=1MHz
VR=0V,f=1MHz,
I/O to I/O
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
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ESDU5V0H4
TYPICAL CHARACTERISTICS
Forward
Forward
Characteristics
100
Pulsed
I/O Pin to Ground
(mA)
IF
FORWARD CURRENT
FORWARD CURRENT
IF
(mA)
Pulsed
VCC to Ground
10
Ta=100℃
Ta=25℃
1
0.1
0.2
0.4
0.6
0.8
FORWARD VOLTAGE
Reverse
1.0
VF
10
Ta=100℃
Ta=25℃
1
0.1
0.2
1.2
0.4
0.6
0.8
FORWARD VOLTAGE
(V)
Reverse
Characteristics
100
1.0
VF
1.2
(V)
Characteristics
100
Pulsed
I/O Pin to Ground
Pulsed
VCC to Ground
80
REVERSE CURRENT IR
(mA)
(mA)
80
REVERSE CURRENT IR
Characteristics
100
60
Ta=25℃
Ta=100℃
40
20
60
Ta=25℃
Ta=100℃
40
20
0
0
0
2
4
6
REVERSE VOLTAGE
VC ——
VR
8
10
0
2
(V)
4
6
REVERSE VOLTAGE
IPP
VR
8
10
4
5
(V)
Capacitance Characteristics
30
1.0
Ta=25℃
Ta=25℃
tp=8/20us
f=1MHz
25
JUNCTION CAPACITANCE
CJ (pF)
CLAMPING VOLTAGE VC(V)
0.8
20
I/O Pin to Ground
15
VCC to Ground
10
I/O Pin to Ground
0.6
0.4
I/O Pin to I/O Pin
0.2
5
0
0.0
0
1
2
3
4
5
0
REVERSE PEAK PULSE CURRENT IPP(A)
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1
2
REVERSE VOLTAGE
4
3
VR
(V)
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ESDU5V0H4
CHANGJIANG ELEC.TECH.
PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
SOT-23-6L Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
θ
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
SOT-23-6L Suggested Pad Layout
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ESDU5V0H4
CHANGJIANG ELEC.TECH.
TAPE AND REEL INFORMATION
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