MCH3486 Power MOSFET 60V, 137mΩ, 2A, Single N-Channel Features www.onsemi.com VDSS • Low RDS(on) • 4V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance • Small Surface Mount Package (MCPH3) RDS(on) Max ID Max 137 mΩ@10V 60V 2A 192 mΩ@4.5V 217 mΩ@4V Electrical Connection N-Channel Specifications 3 Absolute Maximum Ratings at Ta = 25°C Parameter Drain to Source Voltage Symbol Value Unit VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP 8 A 1 PW≤10μs, duty cycle≤1% 2 1:Gate 2:Source 3:Drain Power Dissipation When mounted on ceramic substrate PD 1 W 150 °C −55 to +150 °C (900mm2×0.8mm) Junction Temperature Tj Storage Temperature Tstg Packing Type:TL Symbol Value Unit TL Junction to Ambient When mounted on ceramic substrate FT LOT No. Parameter LOT No. Thermal Resistance Ratings Marking RθJA 125 °C/W (900mm2×0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 October 2014 - Rev. 1 1 Publication Order Number : MCH3486/D MCH3486 Electrical Characteristics at Ta = 25°C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=1A 1.8 RDS(on)1 ID=1A, VGS=10V RDS(on)2 RDS(on)3 Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 60 V 1 μA ±10 μA 2.6 V 105 137 mΩ ID=0.5A, VGS=4.5V 137 192 mΩ ID=0.5A, VGS=4V 155 217 mΩ 1.2 S 310 pF 40 pF Crss 25 pF Turn-ON Delay Time td(on) 6 ns Rise Time tr 5 ns Turn-OFF Delay Time td(off) 28 ns Fall Time tf 11 ns Total Gate Charge Qg 7 nC Gate to Source Charge Qgs 1 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=20V, f=1MHz See specified Test Circuit VDS=30V, VGS=10V, ID=2A 1.3 IS=2A, VGS=0V 0.83 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=30V VIN 10V 0V ID=1A RL=30Ω VIN D VOUT PW=10μs D.C.≤1% G MCH3486 P.G 50Ω S www.onsemi.com 2 MCH3486 www.onsemi.com 3 MCH3486 www.onsemi.com 4 MCH3486 Package Dimensions MCH3486-TL-H/ MCH3486-TL-W MCPH3 CASE 419AQ ISSUE O Unit : mm 1 : Gate 2 : Source 3 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 Ordering & Package Information Device MCH3486-TL-H MCH3486-TL-W Package Shipping Note MCPH3 SC-70,SOT-323 3,000 pcs. / reel Pb-Free and Halogen Free Note on usage : Since the MCH3486 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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