MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB FEATURES ITO-220AB 2 3 1 1 MBR25HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF25HxxCT PIN 1 PIN 2 PIN 3 TO-263AB K For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. 1 MBRB25HxxCT PIN 1 Power pack Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop Low leakage current High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3_A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 2 PIN 2 • • • • • • • • K MECHANICAL DATA HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 35 V to 60 V IFSM 150 A VF 0.54 V, 0.60 V IR 100 μA TJ max. 175 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Common cathode Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code, e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR25H35CT MBR25H45CT MBR25H60CT Maximum repetitive peak reverse voltage VRRM 35 45 60 Working peak reverse voltage VRWM 35 45 60 Maximum DC blocking voltage VDC 35 45 60 Max. average forward rectified current (fig. 1) total device per diode 30 IF(AV) UNIT V A 15 Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz IRRM 1.0 0.5 A Peak non-repetitive reverse energy (8/20 μs waveform) ERSM 25 20 mJ Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VC 25 kV dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C VAC 1500 V Revision: 21-Nov-16 Document Number: 88789 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode IF = 15 A VF (1) IF = 30 A Maximum reverse current per diode IR (2) MBR25H35CT MBR25H45CT TEST CONDITIONS Rated VR TYP. MAX. MBR25H60CT TYP. MAX. TJ = 25 °C - 0.64 - 0.70 TJ = 125 °C 0.50 0.54 0.56 0.60 TJ = 25 °C - 0.74 - 0.85 UNIT V TJ = 125 °C 0.63 0.67 0.68 0.72 TJ = 25 °C - 100 - 100 μA TJ = 125 °C 6.0 20 4.0 20 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Thermal resistance, junction to case per diode SYMBOL MBR MBRF MBRB UNIT RJC 1.5 4.5 1.5 °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AB MBR25H45CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF25H45CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB25H45CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB25H45CT-E3/81 1.35 81 800/reel Tape and reel TO-220AB MBR25H60CT-E3/4W (1) 1.85 4W 50/tube Tube TO-220AB MBR25H45CTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB MBRF25H45CTHE3/45 (1) 1.99 45 50/tube Tube TO-263AB MBRB25H45CTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB MBRB25H45CTHE3/81 (1) 1.35 81 800/reel Tape and reel TO-263AB MBRB25H45CTHE3_A/P (1) 1.35 P 50/tube Tube 1.35 I 800/reel Tape and reel TO-263AB PREFERRED P/N MBRB25H45CTHE3_A/I (1) DELIVERY MODE Note (1) AEC-Q101 qualified Revision: 21-Nov-16 Document Number: 88789 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 100 MBR, MBRB 30 MBRF 20 10 0 25 50 75 100 125 150 TJ = 150 °C 1 TJ = 125 °C 0.1 MBR25H35CT, MBR25H45CT MBR25H60CT 0.01 0.001 TJ = 25 °C 0 175 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Derating Curve (Total) Fig. 4 - Typical Reverse Characteristics Per Diode 150 10 000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave Junction Capacitance (pF) 125 100 75 50 25 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 MBR25H35CT, MBR25H45CT MBR25H60CT 0 100 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 10 TJ = 150 °C 10 TJ = 25 °C 1 TJ = 125 °C 0.1 MBR25H35CT, MBR25H45CT MBR25H60CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 10 0.0001 0 Peak Forward Surge Current (A) Instantaneous Reverse Leakage Current (mA) Average Forward Current (A) 40 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 21-Nov-16 Document Number: 88789 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 3 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) K 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) TO-263AB 0.245 (6.22) MIN. 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.022 (0.56) 0.014 (0.36) 0.190 (4.83) 0.160 (4.06) 3 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.411 (10.45) 0.380 (9.65) 7° REF. 7° REF. 0.560 (14.22) 0.530 (13.46) 0.205 (5.20) 0.195 (4.95) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.160 (4.06) 0.140 (3.56) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.145 (3.68) 0.135 (3.43) 7° REF. 0.076 (1.93) REF. 45° REF. 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 21-Nov-16 Document Number: 88789 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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