Diodes DMN2400UFD Low on-resistance Datasheet

DMN2400UFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
NEW PRODUCT

Low On-Resistance

Very low Gate Threshold Voltage, 1.0V Max

Low Input Capacitance
0.6Ω @ VGS = 4.5V
ID
TA = +25°C
0.9A
0.8Ω @ VGS = 2.5V
0.7A

Fast Switching Speed
1.0Ω @ VGS = 1.8V
0.5A

ESD Protected Gate
1.6Ω @ VGS = 1.5V
0.3A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
V(BR)DSS
20V
Features and Benefits
RDS(ON)
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.

Case: X1-DFN1212-3

Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e4

Power Management Functions

Battery Operated Systems and Solid-State Relays

Terminal Connections: See Diagram

Load Switch

Weight: 0.005 grams (Approximate)
Drain
Body
Diode
Gate
Gate
Protection
Diode
ESD PROTECTED
Top View
Bottom View
Source
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 4)
Part Number
DMN2400UFD-7
Notes:
Case
X1-DFN1212-3
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
X1-DFN1212-3
K24 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
K24
YM
Date Code Key
Year
2011
Code
Y
Month
Code
Jan
1
2012
Z
Feb
2
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
…
…
Mar
3
2015
C
Apr
4
2016
D
May
5
2017
E
Jun
6
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2018
F
Jul
7
Aug
8
2019
G
Sep
9
2020
H
Oct
O
2021
I
Nov
N
2022
J
Dec
D
February 2015
© Diodes Incorporated
DMN2400UFD
Maximum Ratings (@TA = +25°C unless otherwise specified.)
NEW PRODUCT
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = 2.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
20
±12
0.9
0.7
ID
A
0.7
0.5
3.0
0.8
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Units
V
V
IDM
IS
A
A
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
PD
RJA
PD
RJA
RJc
TJ, TSTG
Steady State
Steady State
Value
0.4
280
0.8
140
112
-55 to +150
(@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
20
-
V
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-
-
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
IGSS
-
-
80
100
±1.0
VGS(th)
0.45
-
Static Drain-Source On-Resistance
RDS (ON)
0.35
0.45
0.6
0.7
1.4
0.7
1.0
0.6
0.8
1.0
1.6
1.2
37.0
5.7
4.2
68
0.5
0.07
0.1
4.06
7.28
13.74
10.54
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Units
W
°C/W
W
°C/W
°C/W
°C
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
-
nA
µA
V
Ω
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VGS = 0V, ID = 250μA
VDS = 4.5V, VGS = 0V
VDS = 20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 200mA
VGS = 2.5V, ID = 200mA
VGS = 1.8V, ID = 100mA
VGS = 1.5V, ID = 50mA
VDS = 3V, ID = 200mA
VGS = 0V, IS = 500mA,
VDS =16V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V,
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω,
ID = 200mA
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
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© Diodes Incorporated
DMN2400UFD
2.0
1.5
VGS = 4.5V
VDS = 5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.5
VGS = 2.0V
VGS = 1.8V
1.0
VGS = 1.5V
0.5
1.0
0.5
TA = 150°C
TA = 125°C
TA = 85°C
VGS = 1.2V
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1.6
VGS = 1.5V
0.8
VGS = 1.8V
VGS = 2.5V
0.4
VGS = 5.0V
0
0
VGS = 4.5V
0.4
0.8
1.2
1.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
VGS = 4.5V
ID = 1.0A
VGS = 2.5.V
ID = 500mA
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
3
0.8
VGS = 4.5V
0.6
TA = 150°C
TA = 125°C
0.4
TA = 85°C
TA = 25°C
0.2
TA = -55°C
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6
1.4
0
Fig. 2 Typical Transfer Characteristics
2.0
1.2
TA = 25°C
TA = -55°C
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
VGS = 2.5V
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0.4
0.8
1.2
1.6
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.8
0.6
VGS = 2.5V
ID = 500mA
0.4
0.2
VGS = 4.5V
ID = 1.0A
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
February 2015
© Diodes Incorporated
DMN2400UFD
1.6
VGS(TH), GATE THRESHOLD VOLTAGE (V)
IS, SOURCE CURRENT (A)
1.0
ID = 1mA
0.8
ID = 250µA
0.6
0.4
1.2
TA = 25°C
0.8
0.4
0.2
0
-50
0
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-25
f = 1MHz
C, CAPACITANCE (pF)
50
40
Ciss
30
20
10
Coss
C rss
0
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
0
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
60
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
1,000
20
TA = 150°C
100
T A = 125°C
10
T A = 85°C
TA = -55°C
1
TA = 25°C
0.1
2
4
6
8
10 12 14 16 18 20
V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
5
VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
1.2
4
VDS = 10V
ID = 250mA
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
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DMN2400UFD
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
RJA(t) = r(t) * RJA
RJA = 261°C/W
D = 0.01
P(pk)
D = 0.005
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.000001
t1
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
X1-DFN1212-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1
0 0.05 0.02
A3
0.13
b 0.27 0.37 0.32
b1 0.17 0.27 0.22
D 1.15 1.25 1.20
E 1.15 1.25 1.20
e
0.80
L 0.25 0.35 0.30
All Dimensions in mm
A
A3
A1
D
e
b1
(2x)
E
L
b
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Y
X1
(2x)
Y2
Dimensions
C
X
X1
Y
Y1
Y2
Value (in mm)
0.80
0.42
0.32
0.50
0.50
1.50
Y1
(2x)
C
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
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DMN2400UFD
NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2015, Diodes Incorporated
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DMN2400UFD
Document number: DS35475 Rev. 5 - 2
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