Preliminary Technical Information IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous + 15 V VGSM Transient + 25 V ID25 TC = 25°C - 32 A IDM TC = 25°C, Pulse Width Limited by TJM - 96 A IA EAS TC = 25°C TC = 25°C - 32 1 A J PD TC = 25°C 300 W Maximum Ratings -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s 300 260 °C °C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10 N/lb. Nm/lb.in. Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g G BVDSS VGS = 0V, ID = - 250μA - 200 VGS(th) VDS = VGS, ID = - 250μA - 2.0 IGSS VGS = ± 15V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V - 25 μA -1.25 mA VGS = -10V, ID = 0.5 • ID25, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved D (Tab) D = Drain Tab = Drain z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages Easy to Mount Space Savings High Power Density Applications V z TJ = 125°C S Features z Characteristic Values Min. Typ. Max. D G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D (Tab) TO-247 (IXTH) z RDS(on) - 200V - 32A Ω 130mΩ TO-3P (IXTQ) G D (Tab) = = ≤ - 4.0 V z z z z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 130 mΩ DS100288A(11/10) IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, Note 1 18 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf S 14.5 nF 565 pF 105 pF 32 ns 15 ns 57 ns 12 ns 185 nC 66 nC 45 nC Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs 30 VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.42 °C/W RthJC RthCS TO-220 TO-247 &TO-3P 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = - 32A, VGS = 0V, Note 1 trr QRM IRM IF = -16A, -di/dt = -100A/μs VR = -100V, VGS = 0V Note °C/W °C/W - 32 A - 128 A -1.3 V 190 1.7 -17.8 ns μC A 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T TO-263 Outline TO-3P Outline Pins: TO-220 Outline Pins: 1 - Gate 3 - Source 1 - Gate 3 - Source 2,4 - Drain TO-247 Outline 2 - Drain 1 = Gate 2 = Drain 3 = Source © 2010 IXYS CORPORATION, All Rights Reserved IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -120 -35 VGS = -10V - 8V VGS = -10V - 8V - 7V -30 -100 - 6V - 7V -80 ID - Amperes ID - Amperes -25 -20 -15 -60 - 6V -40 -10 - 5V -20 -5 - 5V - 4V 0 0 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 0 -4.5 -5 -10 -15 -25 -30 Fig. 4. RDS(on) Normalized to ID = -16A vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC -35 2.4 VGS = -10V - 7V -30 2.2 VGS = -10V 2.0 R DS(on) - Normalized - 6V -25 ID - Amperes -20 VDS - Volts VDS - Volts -20 - 5V -15 -10 I D = - 32A 1.8 1.6 I D = -16A 1.4 1.2 1.0 0.8 -5 - 4V 0.6 0 0.4 0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = -16A vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 -35 VGS = -10V 2.2 -30 TJ = 125ºC 2.0 -25 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 TJ = 25ºC -20 -15 -10 1.2 -5 1.0 0.8 0 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Fig. 7. Input Admittance Fig. 8. Transconductance 60 -55 TJ = - 40ºC -50 50 -45 -35 TJ = 125ºC -30 g f s - Siemens ID - Amperes -40 25ºC - 40ºC -25 -20 40 25ºC 30 125ºC 20 -15 -10 10 -5 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -5 -10 -15 -20 VGS - Volts -10 -90 -9 -80 -8 -70 -7 -60 -6 VGS - Volts IS - Amperes -30 -35 -40 -45 -50 -55 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode -100 -50 -40 TJ = 125ºC -30 -25 ID - Amperes VDS = -100V I D = -16A I G = -1mA -5 -4 -3 TJ = 25ºC -20 -2 -10 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 0 20 40 60 VSD - Volts 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 1000 100,000 f = 1 MHz - 100 10,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 1,000 - 10 1ms Crss -5 -10 -15 -20 TJ = 150ºC DC TC = 25ºC Single Pulse 10 0 25µs 100µs -1 100 RDS(on) Limit -25 VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved -30 -35 -40 - 0.1 -1 - 100 - 10 VDS - Volts 10ms 100ms - 1000 IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 16.0 16.0 RG = 1Ω , VGS = -10V RG = 1Ω , VGS = -10V VDS = -100V 15.5 VDS = -100V 15.5 25ºC < TJ < 125ºC t r - Nanoseconds t r - Nanoseconds - 64A < ID < - 32A 15.0 14.5 14.0 13.5 15.0 14.5 14.0 13.5 13.0 13.0 25 35 45 55 65 75 85 95 105 115 125 -15 -20 -25 -30 -35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 60 I D = - 64A, - 32A 80 50 60 40 40 30 20 20 0 2 4 6 8 10 12 14 16 td(off) - - - - 13 60 I D = - 32A 12 55 I D = - 64A 11 50 10 45 9 18 25 35 45 65 75 85 95 105 115 40 125 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 13.0 140 70 td(off) - - - - 12.5 300 tf 120 RG = 10Ω, VGS = -10V 11.0 260 VDS = -100V 100 220 I D = - 32A 80 180 I D = - 64A 60 140 40 100 20 60 50 10.5 45 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 20 0 2 4 6 8 10 RG - Ohms 12 14 16 18 t d(off) - Nanoseconds 55 TJ = 125ºC t d(off) - Nanoseconds 60 TJ = 25ºC td(off) - - - - TJ = 125ºC, VGS = -10V 65 VDS = -100V t f - Nanoseconds tf t f - Nanoseconds 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 11.5 65 RG = 1Ω, VGS = -10V RG - Ohms 12.0 -65 VDS = -100V 10 0 -60 t d(off) - Nanoseconds 70 14 t f - Nanoseconds VDS = -100V 100 -55 70 tf 80 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = -10V 120 -50 15 90 tr -45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 160 140 -40 ID - Amperes IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_32P20T(A6)10-14-10