CYSTEKEC MTN5N50I3 N-channel enhancement mode power mosfet Datasheet

Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 1/11
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN5N50I3
BVDSS : 500V
RDS(ON) max. : 1.6Ω
ID : 4.5A
Description
The MTN5N50I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
Outline
MTN5N50I3
G:Gate
D:Drain
S:Source
MTN5N50I3
TO-251AB
G
D S
TO-251AA
G
D S
CYStek Product Specification
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 2/11
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
500
±30
4.5
2.7
18
90
4.5
4.8
4.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
1.14
48
0.38
-55~+150
W
W
W/°C
°C
PD
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4.5A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃.
3. ISD≤4.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN5N50I3
Symbol
Rth,j-c
Rth,j-a
Value
2.6
110
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 3/11
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
500
2.0
-
0.4
2
-
4.0
±100
1
10
1.6
V
V/°C
V
S
nA
μA
μA
Ω
VGS=0, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=2.25A
VGS=±30
VDS =500V, VGS =0
VDS =400V, VGS =0, TC=125°C
VGS =10V, ID=2.25A
20
3.8
10.6
18
21
33
20
738
74
8
-
nC
ID=4.5A, VDD=400V, VGS=10V
ns
VDD=250V, ID=4.5A, VGS=10V,
RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
280
2
1.5
4.5
18
-
V
IS=4.5A, VGS=0V
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
A
ns
μC
VGS=0, IF=4.5A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN5N50I3
MTN5N50I3
Package
TO-251
(RoHS compliant)
Shipping
Marking
80 pcs / tube, 50 tubes / box
5N50
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 4/11
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
3.5
15V
10V
9V
Drain Current - ID(A)
8
Static Drain-Source On-state
Resistance-RDS(on) (Ω)
10
7V
6
4
6V
5.5V
2
3
2.5
2
1.5
1
0
-100
0
0
5
10
15
20
25
Drain-Source Voltage -VDS(V)
30
ID=2.25A,
VGS=10V
0.5
5V
VGS=4.5V
35
-50
200
10
2.5
VDS=30V
Ta=25°C
VGS=10V
Drain Current-I D(on)(A)
Static Drain-Source On-State
Resistance-R DS(on)(Ω)
150
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
2
1.5
8
6
VDS=10V
4
2
0
1
0.1
1
Drain Current-ID(A)
0
10
5
10
15
Gate-Source Voltage-VGS(V)
20
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
15
Ta=25°C
VGS=0V
12
Forward Current-I F(A)
Static Drain-Source On-State
Resistance-RDS(ON) (Ω)
0
50
100
Ambient Temperature-Ta(°C)
9
6
10
Ta=150°C
Ta=25°C
1
ID=2.25A
3
0.1
0
0
MTN5N50I3
2
4
6
8
Gate-Source Voltage-VGS(V)
10
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -VSD(V)
CYStek Product Specification
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 5/11
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
10000
Drain-Source Breakdown Voltage
BVDSS(V)
650
Ciss
Capacitance-(pF)
1000
Coss
100
10
f=1MHz
5
550
500
ID=250μA,
VGS=0V
Crss
1
0
600
10
15
20
25
Drain-to-Source Voltage-VDS(V)
450
-100
30
-50
50
100
150
200
Gate Charge Characteristics
Maximum Safe Operating Area
12
100
VDS=100V
Gate-Source Voltage---VGS(V)
10μs
Drain Current --- ID(A)
0
Ambient Temperature-Tj(°C)
100μs
1ms
10
10ms
1
100ms
Operation in this area is
limited by RDS(ON)
DC
0.1
10
VDS=250V
8
VDS=400V
6
4
2
ID=4.5A
0
0.01
1
10
100
Drain-Source Voltage -VDS(V)
1000
0
4
8
12
16
20
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
5
Maximum Drain Current---I D(A)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
175
Case Temperature---TC (°C)
MTN5N50I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 6/11
Typical Characteristics(Cont.)
Transient Thermal Response Curves
10
D=0.5
ZθJC(t), Thermal Response
1
0.2
0.1
1.ZθJC(t)=2.6 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.05
0.1
0.02
0.01
0.01
Single
P l
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN5N50I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 7/11
Test Circuit and Waveforms
MTN5N50I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 8/11
Test Circuit and Waveforms(Cont.)
MTN5N50I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 9/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN5N50I3
CYStek Product Specification
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 10/11
CYStech Electronics Corp.
TO-251AB Dimension
Marking:
Product
Name
Date
Code
CYS
5N50
□□□□
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Inches
Min.
Max.
0.2500
0.2618
0.2047
0.2126
0.5709
0.5866
0.0276
0.0354
0.0199
0.0276
0.0886
0.0925
0.0886
0.0925
0.0169
0.0228
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
6.35
6.65
5.20
5.40
14.50
14.90
0.70
0.90
0.50
0.70
2.25
2.35
2.25
2.35
0.43
0.58
DIM
I
J
K
L
M
N
S
T
Inches
Min.
Max.
0.0866
0.0945
0.2126
0.2244
0.2992
0.3071
0.0453
0.0492
0.0169
0.0228
0.1181 REF
0.1969 REF
0.1496 REF
Millimeters
Min.
Max.
2.20
2.40
5.40
5.70
7.60
7.80
1.15
1.25
0.43
0.58
3.00 REF
5.00 REF
3.80 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
MTN5N50I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C740I3
Issued Date : 2010.06.24
Revised Date : 2011.11.10
Page No. : 11/11
TO-251AA Dimension
Marking :
Device Name
Date Code
3-Lead TO-251AA Plastic Package
CYStek Package Code: I3
Style : Pin 1. Gate 2. Drain
3. Source
*: Typical
Inches
Min.
Max.
0.2559
0.2638
0.2020
0.2126
0.4094
0.4331
0.0280
0.0319
0.0858
0.0941
0.0858
0.0941
0.0181
0.0220
0.0902
0.0937
DIM
A
B
C
E
F
G
H
I
Millimeters
Min.
Max.
6.50
6.70
5.13
5.46
10.40
11.00
0.71
0.81
2.18
2.39
2.18
2.39
0.46
0.56
2.29
2.38
DIM
J
K
L
M
S
T
U
V
Inches
Min.
Max.
0.2362
0.2441
0.1299
0.1457
0.0358
0.0437
0.0181
0.0220
0.1902 REF
0.2106 REF
0.0701 REF
0.0299 REF
Millimeters
Min.
Max.
6.00
6.20
3.30
3.70
0.91
1.11
0.46
0.56
4.83 REF
5.35 REF
1.78 REF
0.76 REF
Notes: 1.Controlling dimension: inch.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN5N50I3
CYStek Product Specification
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