DMN6070SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION V(BR)DSS Features and Benefits ID max TA = +25°C RDS(ON) max 80mΩ @ VGS = 10V 4.1A 100mΩ @ VGS = 4.5V 3.6A 60V • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • • Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it • Case: SO-8 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. • Moisture Sensitivity: Level 1 per J-STD-020 • Backlighting • Terminal Connections Indicator: See Diagram • Power Management Functions • • DC-DC Converters Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (Approximate) D1 SO-8 S1 D1 G1 D1 S2 D2 G2 D2 Top View D2 G1 G2 S1 Top View Pin Configuration S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN6070SSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SO-8 8 5 = Manufacturer’s Marking N6070SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) N6070SD YY WW 1 DMN6070SSD Document number: DS36342 Rev. 3 - 2 4 1 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN6070SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 60 ±20 3.3 2.6 ID A 4.1 3.4 2.0 12 10 5.9 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 7) L=0.1mH Avalanche Energy (Note 7) L=0.1mH Units V V IS IDM IAS EAS A A A A mJ Thermal Characteristics (@TA= +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) Value 1.2 104 61 1.5 83 50 14.5 -55 to +150 RθJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA= +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA ID = 250μA, VGS= 0V VDS= 60V, VGS= 0V VGS= ±16V, VDS= 0V VGS(th) 1.0 RDS (ON) ⎯ VSD ⎯ 3.0 80 100 1.1 V Static Drain-Source On-Resistance ⎯ 68 70 0.75 ID= 250μA, VDS= VGS VGS= 10V, ID= 4.5A VGS= 4.5V, ID= 3.5A IS= 12A, VGS= 0V Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ — — 588 26.5 20 1.5 5.6 12.3 1.7 1.9 3.5 4.1 35 11 18 12 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS= 4.5V) Total Gate Charge (VGS= 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS= 30V, VGS= 0V f= 1MHz Ω Vgs= 0V, Vds= 0V, f=1MHz, nC VDS= 30V, ID= 3A nS VDD= 30V, VGS= 10V RL ≅ 50Ω, RG ≅ 20Ω nS nC IS = 12A, dI/dt = 100A/μs IS = 12A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN6070SSD Document number: DS36342 Rev. 3 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN6070SSD 15.0 15 VDS = 5.0V VGS = 10V 12.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.0V 9.0 VGS = 3.5V 6.0 VGS = 3.0V 9 T A = 150°C TA = 125°C 6 TA = 85°C TA = 25°C 3 3.0 TA = -55°C VGS = 2.5V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 5 0.15 0.09 VGS = 4.5V 0.06 VGS = 10V 0.03 0 0.3 3 6 9 12 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 15 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.5 0.4 0.3 0.2 ID = 12A 0.1 0.25 0.2 TA = 150°C 0.15 TA = 125°C TA = 85°C 0.1 TA = 25°C 0.05 0 ID = 6A 2 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 10 2.4 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCE INFORMATION 12 VGS = 5.0V VGS = 10V ID = 10A 2 VGS = 4.5V ID = 5A 1.6 1.2 0.8 T A = -55°C 0 0 3 6 9 12 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN6070SSD Document number: DS36342 Rev. 3 - 2 15 3 of 6 www.diodes.com 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature January 2015 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.5 VGS = 4.5V ID = 5A 2 ID = 1mA ID = 250µA 1.5 VGS = 10 V ID = 10A 1 0.5 -50 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 100 20 -ID, DRAIN CURRENT (A) IS, SOURCE CURRENT (A) T A = 150°C 10 TA = 125°C T A = 85°C TA = 25°C 5 PW = 100µs 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150°C TA = 25°C VGS = -8V Single Pulse 0.001 DUT on 1 * MRP Board 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 SOA, Safe Operation Area 100 10 V GS GATE THRESHOLD VOLTAGE (V) 10000 f=1MHz 1000 Ciss 100 Coss Crss 10 1 0 1 0.01 TA = -55°C 0 RDS(on) Limited 10 15 C T , JUNCTION CAPACITANCE (pF) NEW PRODUCT ADVANCE INFORMATION DMN6070SSD 10 20 30 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance DMN6070SSD Document number: DS36342 Rev. 3 - 2 40 4 of 6 www.diodes.com 9 VDS = 30V I D = 3A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 12 Gate Charge 14 January 2015 © Diodes Incorporated DMN6070SSD r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * Rθ JA RθJA = 108°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 NEW PRODUCT ADVANCE INFORMATION 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN6070SSD Document number: DS36342 Rev. 3 - 2 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN6070SSD IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMN6070SSD Document number: DS36342 Rev. 3 - 2 6 of 6 www.diodes.com January 2015 © Diodes Incorporated