BWTECH MSA4P21 N p-channel 40-v (d-s) mosfet Datasheet

MSA4P21
N & P-Channel 40-V (D-S) MOSFET
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
• RoHS compliant package
Typical Applications:
• Load Switches
• Motor Drives
• DC/DC Conversion
Packing & Order Information
3,000/Reel
Graphic symbol
Symbol
Dimensions in Millimeters
NOM
MAX
MIN
NOM
A
0.50
0.55
0.60
0.02
0.022
0.024
A1
0.00
-
0.05
0.00
-
0.002
b
0.25
0.30
0.35
0.01
0.012
0.014
E
0.152 BEF
MAX
0.006 BEF
D
1.90
2.00
2.10
0.750
0.079
0.083
D1
0.85
0.95
1.05
0.033
0.037
0.041
D2
0.13
0.23
0.33
0.005
0.009
0.013
E
1.90
2.00
2.10
0.075
0.079
0.083
E1
0.90
1.00
1.10
0.035
0.039
0.043
E2
0.72
0.82
0.92
0.028
0.032
0.036
e
0.65 BSC
0.026 BSC
K
0.20 BSC
0.008 BSC
K1
0.25 BSC
0.010 BSC
K2
0.33 BSC
0.013 BSC
K3
0.22 BSC
0.009 BSC
K4
0.40 BSC
0.016 BSC
K5
0.20 BSC
L
Publication Order Number: [MSA4P21]
Dimensions in Inches
MIN
0.25
0.30
0.008 BSC
0.35
0.010
0.012
0.014
© Bruckewell Technology Corporation Rev. A -2014
MSA4P21
N & P-Channel 40-V (D-S) MOSFET
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±8
V
a
-8.8
A
a
-7
A
-40
A
ID
Continuous Drain Current (TA =25°C)
Continuous Drain Current (TA =70°C)
IDM
IS
PD
TJ/TSTG
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
-5
A
a
3
W
a
1.9
W
-55 to 150
°C
Power Dissipation (TA =25°C)
Power Dissipation (TA =70°C)
Operating Junction and Storage Temperature
Thermal Resistance Ratings
Symbol
Parameter
RθJA
Maximum
a
40
a
90
Maximum Junction-to-Ambient (t <= 10 sec)
Maximum Junction-to-Ambient (Steady-State)
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Static
Symbol
Parameter
Test Conditions
Min
VGS(th)
Gate-Source Threshold Voltage
VDS = VGS, ID = -250μA
-0.4
IGSS
Gate-Body Leakage
VDS = 0 V , VGS = ±8 V
IDSS
Zero Gate Voltage Drain Current
ID(on)
On-State Drain Current
r
DS(on)
Drain-Source On-Resistance
Typ.
Max.
V
±100
VDS = -16 V , VGS = 0 V
-1
VDS = -16 V , VGS = 0 V , TJ= 55°C
-25
VDS = -5 V, VGS = -4.5 V
Units
-12
nA
uA
A
VGS = -4.5 V, ID = -7 A
26
VGS = -2.5 V, ID = -5.6 A
34
mΩ
gfs
Forward Tranconductance
VGS = -15 V, ID = -7 A
8
S
VSD
Diode Forward Voltage
IS = -2.5 A , VGS = 0 V
-0.68
V
Publication Order Number: [MSA4P21]
© Bruckewell Technology Corporation Rev. A -2014
MSA4P21
N & P-Channel 40-V (D-S) MOSFET
Dynamic
Symbol
Qg
b
Parameter
Test Conditions
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS = -10 V , ID = -7 A,
VGS = -4.5 V
ID = -7 A , RL = 1.4 Ω,
VGEN = -4.5 V , RGEN = 6 Ω
VDS = -10 V
VDS = -15 V
f = 1 MHz ,VGS = 0 V
Min
Typ.
Max.
Units
--
30
--
nC
--
4
--
nC
--
6
--
nC
--
6
--
ns
--
12
--
ns
--
85
--
ns
--
35
--
ns
--
1435
--
pF
--
126
--
pF
--
113
--
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Publication Order Number: [MSA4P21]
© Bruckewell Technology Corporation Rev. A -2014
MSA4P21
N & P-Channel 40-V (D-S) MOSFET
■Typical
Electrical Characteristics
FIG.1-ON-RESISTANCE VS. DRAIN
CURRENT
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON-RESISTANCE VS GATE-TO-SOURCE
FIG.4-DRAIN-TO-SOURCE FORWARD VOLTAGE
VOLTAGE
FIG.5-OUTPUT CHARACTERISTICS
Publication Order Number: [MSA4P21]
FIG.6-CAPACITANCE
© Bruckewell Technology Corporation Rev. A -2014
MSA4P21
N & P-Channel 40-V (D-S) MOSFET
■Typical Electrical Characteristics
FIG.7-GATE CHARGE
FIG.8-NORMALIZED ON-RESISTANCE VS
JUNCTION TEMPERATURE
FIG.9-SAFE OPERATIING AREA
FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION
FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT
Publication Order Number: [MSA4P21]
© Bruckewell Technology Corporation Rev. A -2014
MSA4P21
N & P-Channel 40-V (D-S) MOSFET
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purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSA4P21]
© Bruckewell Technology Corporation Rev. A -2014
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