DMN24H11DS N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V(BR)DSS 240V ADVANCED INFORMATION ID TA = +25°C RDS(ON) 11Ω @ VGS = 10V 0.27A 12Ω @ VGS = 4.5V 0.26A Description Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Qualified to AEC-Q101 Standards for High Reliability Halogen and Antimony Free. “Green” Device (Note 3) This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching Mechanical Data performance, making it ideal for high efficiency power management applications. Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Power management functions Terminals: Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, leadframe). Memories, Transistors, etc Terminal Connections: See Diagram Weight: 0.006 grams (approximate) D D G S G S Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN24H11DS-7 DMN24H11DS-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 4H1 Date Code Key Year Code Month Code 2011 Y Jan 1 4H1 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 4H1 2012 Z Feb 2 DMN24H11DS Document number: DS37092 Rev. 3 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D April 2014 © Diodes Incorporated DMN24H11DS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 240 V Gate-Source Voltage VGSS ±20 V ID 0.27 0.22 A Pulsed Drain Current (10μs pulse, duty cycle ≦1%) IDM 0.8 A Maximum Body Diode Continuous Current (Note 5) IS 0.8 A dv/dt 6.0 V/ns Value 0.75 1.2 166 104 Units ADVANCED INFORMATION Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C Steady State Peak diode recovery dv/dt Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case PD RθJA Operating and Storage Temperature Range W °C/W RθJC 35 TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 240 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 100 nA VDS = 240V, VGS = 0V Gate-Body Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 2.0 3.0 V 3.7 11 4.0 12 VSD 0.7 1.2 Input Capacitance Ciss 76.8 Output Capacitance Coss 6.9 Reverse Transfer Capacitance Crss 4.1 Gate Resistance RG 17 Total Gate Charge Qg 3.7 Gate-Source Charge Qgs 0.3 Gate-Drain Charge Qgd 2.1 Turn-On Delay Time tD(on) 4.8 Turn-On Rise Time tr 4.7 Turn-Off Delay Time tD(off) 17.5 Turn-Off Fall Time tf 102.3 Reverse Recovery Time trr 45.6 nS 51.6 nC ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS (ON) Ω VDS = VGS, ID = 250µA VGS = 10V, ID = 0.3A VGS = 4.5V, ID = 0.2A V VGS = 0V, IS = 0.1A pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 192V, VGS = 10V, ID = 0.1A nS VDS = 120V, ID = 0.1A, VGS = 10V, RG = 6.0Ω DYNAMIC CHARACTERISTICS (Note 8) Reverse Recovery Charge Notes: Qrr VR = 100V, IF = 1.0A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN24H11DS Document number: DS37092 Rev. 3 - 2 2 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN24H11DS 0.5 0.3 VGS = 10V VGS = 4.0V VDS = 5.0V VGS = 4.5V 0.25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.5V 0.3 0.2 0.1 0.2 0.15 T A = 150°C 0.1 TA = 125°C TA = 25°C 0.05 VGS = 3.0V TA = 85°C TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 8 7.5 7 6.5 6 5.5 VGS = 4.5V 5 VGS = 10V 4.5 4 3.5 3 2.5 2 0 0 5 0.1 0.2 0.3 0.4 0.5 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.6 16 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 15 14 13 12 11 10 9 8 7 6 ID = 300mA 5 4 3 ID = 200mA 2 1 0 0 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 3 VGS = 4.5V 14 T A = 150°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCED INFORMATION 0.4 12 T A = 125°C 10 T A = 85°C 8 6 TA = 25°C 4 TA = -55°C 2 0 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN24H11DS Document number: DS37092 Rev. 3 - 2 3 of 6 www.diodes.com 2.5 VGS = 10 V ID = 400mA 2 VGS = 5.0 V ID = 200mA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature April 2014 © Diodes Incorporated DMN24H11DS 2.8 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 3 12 VGS = 10V ID = 400mA 9 VGS = 5.0V ID = 200mA 6 3 2.6 2.4 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 1000 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 0.4 TA = 150°C 0.3 TA = 125°C 0.2 TA = 25°C TA = 85°C 0.1 0 ID = 250µA 2 0 -50 0 ID = 1mA 2.2 0.5 TA = -55°C 100 Ciss 10 Coss C rss 1 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 1 10 RDS(on) Limited 8 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCED INFORMATION 15 6 VDS = 192V ID = 0.1A 4 2 0 0.1 DC PW = 10s PW = 1s PW = 100ms 0.01 PW = 10ms TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0 0.5 1 1.5 2 2.5 3 3.5 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN24H11DS Document number: DS37092 Rev. 3 - 2 4 0.001 0.1 4 of 6 www.diodes.com PW = 1ms PW = 100µs 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 1000 April 2014 © Diodes Incorporated DMN24H11DS 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION D = 0.5 0.1 0.01 RJA(t) = r(t) * RJA RJA = 164°C/W Duty Cycle, D = t1/ t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ° 7 l l A H SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm J K 1 K a M A 1 L L B C D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. Y Z C X DMN24H11DS Document number: DS37092 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN24H11DS IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMN24H11DS Document number: DS37092 Rev. 3 - 2 6 of 6 www.diodes.com April 2014 © Diodes Incorporated