DMN3018SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 21mΩ @ VGS = 10V 8.5A V(BR)DSS 30V Features and Benefits Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products • 6.6A 35mΩ @ VGS = 4.5V • • Occupies just 33% of the board area occupied by SO-8 enabling Description • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications • • • • Backlighting Power Management Functions DC-DC Converters • ® Case: POWERDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 S • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.072 grams (approximate) D Pin 1 S S G G ESD PROTECTED D D D Gate Protection Diode D Bottom View Top View S Top View Internal Schematic Ordering Information (Note 4) Part Number DMN3018SFG-7 DMN3018SFG-13 Notes: Case ® POWERDI 3333-8 ® POWERDI 3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW NEW PRODUCT smaller end product N38 DMN3018SFG Document number: DS35638 Rev. 4 - 2 N38 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) 1 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN3018SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s NEW PRODUCT Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 30 ±25 8.5 6.8 ID 11.3 9.1 A ID 6.6 5.3 A 8.7 7.0 2.5 60 18 16 ID Maximum Continuous Body Diode Forward Current (Note 4) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH IS IDM IAS EAS Units V V A A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Value 1.0 126 71 2.2 56 31 7.0 -55 to 150 PD Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) 2.1 21 35 1.2 mΩ VSD 1.7 16 21 — V Static Drain-Source On-Resistance 1 — — 0.5 VDS = VGS, ID = 250μA VGS = 10V, ID = 10A VGS = 4.5V, ID = 8.5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Trr Qrr — — — — — — — — — — — — — — 697 97 67 1.47 6.0 13.2 2.2 1.8 4.3 4.4 20.1 4.1 7.3 7.9 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V,f = 1.0MHz VGS = 10V, VDS = 15V, ID = 9A VDD = 15V, VGS = 10V, RL = 15Ω,ID = 1A, RG = 6Ω IF = 9A, di/dt = 500A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3018SFG Document number: DS35638 Rev. 4 - 2 2 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN3018SFG 30.0 20 VGS = 3.5V 16 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 20.0 VGS = 4.5V 15.0 10.0 VGS = 3.0V 12 8 T A = 150°C TA = 85°C 4 5.0 T A = 25°C TA = 125°C VGS = 2.5V 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics VGS = 4.5V VGS = 10V 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 10 V ID = 10A 1.4 VGS = 4.5V ID = 5A 1.2 1.0 0.8 0.6 -50 Document number: DS35638 Rev. 4 - 2 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.06 0.04 TA = 125°C TA = 150°C TA = 85°C T A = 25°C TA = -55°C 0.02 0 0 4 8 12 16 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.08 0.06 0.04 VGS = 4.5V ID = 5A 0.02 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN3018SFG 0 VGS = 4.5V 20 1.6 TA = -55°C 0.08 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 2.5V 0.01 0 0 3 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT VDS = 5.0V 3 of 6 www.diodes.com VGS = 10V ID = 10A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature April 2014 © Diodes Incorporated DMN3018SFG ID = 1mA 1.6 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 20 2.0 ID = 250µA 1.2 0.8 15 10 TA = 25°C 5 0.4 0 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 1,000 Coss 100 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 Ciss VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) C rss VDS = 15V ID = 9A 8 6 4 2 f = 1MHz 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 2.4 20 0 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 16 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 127°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 DMN3018SFG Document number: DS35638 Rev. 4 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance 4 of 6 www.diodes.com 100 1000 April 2014 © Diodes Incorporated DMN3018SFG Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ® A POWERDI 3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A3 A1 D NEW PRODUCT D2 1 Pin 1 ID L (4x) 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Dimensions C G G1 Y Y1 Y2 Y3 X X2 X G Y2 8 5 G1 Y1 Y 1 4 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 Y3 X2 DMN3018SFG Document number: DS35638 Rev. 4 - 2 C 5 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN3018SFG IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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