MGCHIP MDV1545 Single n-channel trench mosfet 30v Datasheet

Single N-channel Trench MOSFET 30V
General Description
Features



The MDV1545 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1545 is suitable device for DC/DC Converter
and general purpose applications.
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
D
D
D
D
D
D
D
D
S
S
S
G
G
S
S
S
VDS = 30V
ID = 32A @VGS = 10V
RDS(ON)
< 10.1 mΩ @VGS = 10V
< 14.0 mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
D
G
S
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
o
39
o
32
TC=25 C (Silicon Limited)
TC=25 C (Package Limited)
TC=25oC
Continuous Drain Current (1)
ID
o
TC=70 C
14
TA=70oC
11
IDM
o
TC=25 C
120
23
o
TC=70 C
PD
TA=25oC
TA=70oC
Single Pulse Avalanche Energy
A
27
TA=25oC
Pulsed Drain Current
Power Dissipation
28
14
W
3.4
2.2
(2)
Junction and Storage Temperature Range
EAS
45
TJ, Tstg
-55~150
Symbol
Rating
RθJA
36
RθJC
5.0
mJ
o
C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
(1)
Thermal Resistance, Junction-to-Case
Oct. 2015. Ver. 1.3
1
Unit
o
C/W
MagnaChip Semiconductor Ltd.
MDV1545 – Single N-Channel Trench MOSFET 30V
MDV1545
Part Number
Temp. Range
Package
Packing
RoHS Status
MDV1545URH
-55~150oC
PDFN33
Tape & Reel
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
30
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.3
1.9
2.7
-
1
uA
nA
V
Drain Cut-Off Current
IDSS
VDS = 30V, VGS = 0V
-
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±100
VGS = 10V, ID = 11A
-
8.2
10.1
11.9
14.6
Drain-Source ON Resistance
Forward Transconductance
TJ=125oC
RDS(ON)
gfs
VGS = 4.5V, ID = 9A
-
11.5
14.0
VDS = 5V, ID = 11A
-
31
-
9.7
14.0
18.2
4.0
5.7
7.4
-
2.7
-
-
1.3
-
560
800
1039
40
58
75
mΩ
S
Dynamic Characteristics
Total Gate Charge
Qg(10V)
Total Gate Charge
Qg(4.5V)
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
VDD = 15V, ID = 11A,
VGS = 10V
VDS = 15V, VGS = 0V,
f = 1.0MHz
nC
Output Capacitance
Coss
273
390
560
Turn-On Delay Time
td(on)
-
5.7
-
-
11.3
-
-
20.0
-
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
tr
td(off)
VGS = 10V, VDD = 15.0V,
ID = 11A, RG =3Ω,
tf
Rg
f=1 MHz
Source-Drain Diode Forward Voltage
VSD
IS = 1A, VGS = 0V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
pF
ns
-
5.7
-
1.0
1.6
3.0
-
0.75
1.1
V
-
28.0
-
ns
-
23.0
-
nC
Ω
Drain-Source Body Diode Characteristics
IF = 11A, dl/dt = 100A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 15 A, VDD = 27V, VGS = 10V
Oct. 2015. Ver. 1.3
2
MagnaChip Semiconductor Ltd.
MDV1545 – Single N-Channel Trench MOSFET 30V
Ordering Information
Drain-Source On-Resistance [mOhm]
20
VGS = 10V
8.0V
ID, Drain Current [A]
40
6.0V
4.5V
4.0V
30
20
10
3.0V
18
16
14
VGS = 10V
12
10
VGS = 4.5V
8
6
4
2
0
0.0
0.5
1.0
1.5
0
2.0
0
20
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
100
1.8
* Notes :
ID = 11.0A
90
2. ID = 11 A
1.6
RDS(ON) [mOhm],
1.4
1.2
1.0
0.8
Drain-Source On-Resistance
RDS(ON), (Normalized)
* Notes :
1. VGS = 10 V
Drain-Source On-Resistance
40
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
80
70
60
50
40
30
20
10
0.6
-50
-25
0
25
50
75
100
125
0
150
2
3
4
o
TJ, Junction Temperature [ C]
5
6
7
8
9
10
VGS, Gate to Source Volatge [V]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
* Notes :
VGS = 0V
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
* Notes :
VDS = 5V
15
10
5
0
0
1
2
3
4
1
0.1
0.0
5
VGS, Gate-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Fig.5 Transfer Characteristics
Oct. 2015. Ver. 1.3
10
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
MagnaChip Semiconductor Ltd.
MDV1545 – Single N-Channel Trench MOSFET 30V
50
1500
Ciss = Cgs + Cgd (Cds = shorted)
* Note : ID = 11A
Coss = Cds + Cgd
VDS = 15V
Crss = Cgd
Capacitance [pF]
VGS, Gate-Source Voltage [V]
8
6
4
1000
Ciss
Coss
* Notes ;
1. VGS = 0 V
500
2. f = 1 MHz
2
Crss
0
0
0
5
10
15
20
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
3
10
50
40
2
ID, Drain Current [A]
ID, Drain Current [A]
10
10 ms
1
10
100 ms
Operation in This Area
is Limited by R DS(on)
DC
1s
10 s
0
10
30
Limited by Package
20
10
Single Pulse
TJ=Max Rated
o
TC=25 C
-1
10
-1
0
10
1
10
0
25
2
10
10
50
75
100
125
150
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.9 Maximum Safe Operating Area
1
10
ZthJC (t), Thermal Response
D=0.5
0.2
0
10
0.1
0.05
0.02
-1
10
0.01
single pulse
-2
10
* Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * ZthJC * RthJC(t) + TC
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Oct. 2015. Ver. 1.3
4
MagnaChip Semiconductor Ltd.
MDV1545 – Single N-Channel Trench MOSFET 30V
10
MDV1545 – Single N-Channel Trench MOSFET 30V
Package Dimension
PowerDFN33 (3.3x3.3mm)
Dimensions are in millimeters, unless otherwise specified
(Unit: mm)
Oct. 2015. Ver. 1.3
5
MagnaChip Semiconductor Ltd.
MDV1545 – Single N-Channel Trench MOSFET 30V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Oct. 2015. Ver. 1.3
6
MagnaChip Semiconductor Ltd.
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