Diodes DMG6898LSDQ-13 Dual n-channel enhancement mode mosfet Datasheet

DMG6898LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(on) max
ID max
TA = +25°C

Low On-Resistance

Low Input Capacitance
16mΩ @ VGS = 10V
9.8A

Fast Switching Speed
23mΩ @ VGS = 4.5V
8.7A

Low Input/Output Leakage

ESD Protected Up To 2kV
Description

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it

Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4)
V(BR)DSS
30V
NEW PRODUCT
Features
ideal for high efficiency power management applications.
Mechanical Data
Applications



Backlighting
Power Management Functions
DC-DC Converters
ESD PROTECTED TO 2kV

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Weight: 0.072 grams (Approximate)
D1
G1
D1
S1
D2
G2
D2
S2
Top View
Internal Schematic
Top View
Ordering Information (Notes 4 & 5)
Part Number
DMG6898LSD-13
DMG6898LSDQ-13
Notes:
Qualification
Commercial
Automotive
Case
SO-8
SO-8
Packaging
2,500 / Tape & Reel
2,500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
= Manufacturer’s Marking
G6898LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
G6898LD
YY WW
1
DMG6898LSD
Document number: DS31947 Rev. 6 - 2
4
1 of 6
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November 2014
© Diodes Incorporated
DMG6898LSD
Maximum Ratings @TA = +25°C unless otherwise specified
NEW PRODUCT
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current (Note 6)
Unit
V
V
IDM
Value
20
±12
9.5
7.1
30
Symbol
PD
RθJA
TJ, TSTG
Value
1.28
99.3
-55 to +150
Unit
W
°C/W
°C
TA = +25°C
TA = +85°C
ID
Pulsed Drain Current (Note 7)
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
@TA = +25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1.0
±10
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.5
RDS (ON)
-
|Yfs|
VSD
-
1.5
16
23
1.2
V
Static Drain-Source On-Resistance
1.0
11
17
17
0.7
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 9.4A
VGS = 2.5V, ID = 8.3A
VDS = 5V, ID = 9.4A
VGS = 0V, IS = 1.3A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
-
1149
157
142
1.51
11.6
26
2.7
3.4
11.67
12.49
35.89
12.33
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
tD(on)
tr
tD(off)
tf
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
ID = 9.4A
VDD = 10V, VGS = 4.5V,
RGEN = 6Ω, ID = 1A
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG6898LSD
Document number: DS31947 Rev. 6 - 2
2 of 6
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November 2014
© Diodes Incorporated
DMG6898LSD
20
20
VGS = 8.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 3.0V
VGS = 2.5V
VGS = 2.0V
10
5
15
VDS = 10V
10
5
TA = 150°C
VGS = 1.8V
T A = 125°C
TA = 85°C
T A = 25°C
TA = -55°C
VGS = 1.5V
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.06
0.05
0.04
VGS = 1.8V
0.03
0.02
VGS = 2.5V
VGS = 4.5V
0.01
0
0
2
1.2
VGS = 4.5V
ID = 500mA
0.8
VGS = 2.5V
ID = 150mA
0.6
0.4
-50
0.03
TA = 125°C
T A = 85°C
TA = 25°C
0.01
TA = -55°C
0
2
4
6
8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.04
0.03
VGS = 4.5V
ID = 500mA
0.02
VGS = 2.5V
ID = 150mA
0.01
Fig. 5 On-Resistance Variation with Temperature
Document number: DS31947 Rev. 6 - 2
TA = 150°C
0.02
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
DMG6898LSD
3
VGS = 4.5V
0
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
1.4
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
0.04
4
6
8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
1.0
0
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
VGS = 4.5V
15
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0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
November 2014
© Diodes Incorporated
DMG6898LSD
20
1.4
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.6
1.2
ID = 1mA
1.0
ID = 250µA
0.8
0.6
0.4
15
T A = 25°C
10
5
0.2
0
0.4
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,800
0.6
0.8
1
V SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
10,000
IDSS, LEAKAGE CURRENT (nA)
1,600
C, CAPACITANCE (pF)
1,400
1,200
Ciss
1,000
800
600
400
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
TA = 25°C
Coss
200
TA = -55°C
Crss
1
0
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
20
0
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
20
10
VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
1.8
VDS = 10V
ID = 9.4A
8
6
4
2
0
0
4
8
12
16
20
24
28
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
DMG6898LSD
Document number: DS31947 Rev. 6 - 2
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November 2014
© Diodes Incorporated
DMG6898LSD
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA(t) = r(t) * RJA
RJA = 205°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * R JA(t)
Duty Cycle, D = t1/t2
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
100
1,000
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
0.254
NEW PRODUCT
1
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82

0
8
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMG6898LSD
Document number: DS31947 Rev. 6 - 2
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November 2014
© Diodes Incorporated
DMG6898LSD
IMPORTANT NOTICE
NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
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DMG6898LSD
Document number: DS31947 Rev. 6 - 2
6 of 6
www.diodes.com
November 2014
© Diodes Incorporated
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