DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1997 Dec 05 Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. handbook, halfpage 3 d g s APPLICATIONS • Low level general purpose amplifiers in thick and thin-film circuits. 1 Top view PINNING - SOT23 PIN SYMBOL 1 d drain(1) 2 s source(1) 3 g gate 2 MAM385 Marking codes: BFR30: M1p. BFR31: M2p. DESCRIPTION Fig.1 Simplified outline and symbol. Note CAUTION 1. Drain and source are interchangeable. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − MAX. ±25 UNIT VDS drain-source voltage VGSO gate-source voltage open drain − −25 V Ptot total power dissipation Tamb ≤ 40 °C − 250 mW IDSS drain current VGS = 0; VDS = 10 V BFR30 4 10 mA BFR31 1 5 mA BFR30 1 4 mS BFR31 1.5 4.5 mS yfs common-source transfer admittance 1997 Dec 05 V ID = 1 mA; VDS = 10 V; f = 1 kHz 2 Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±25 V VDGO drain-gate voltage open source − −25 V VGSO gate-source voltage open drain − −25 V ID drain current − 10 mA IG forward gate current (DC) − 5 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Tamb ≤ 40 °C; note 1; see Fig.2 Note 1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to ambient Rth j-a note 1 Note 1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm. MDA245 300 handbook, halfpage Ptot (mW) 200 100 0 0 40 80 120 200 160 Tamb (°C) Fig.2 Power derating curve. 1997 Dec 05 3 VALUE UNIT 430 K/W Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IGSS gate cut-off current VDS = 0; VGS = −10 V IDSS drain current VGS = 0; VDS = 10 V VGS VGS VGSoff yfs nA BFR30 4 10 mA BFR31 1 5 mA BFR30 −0.7 −3 V BFR31 0 −1.3 V BFR30 − −4 V BFR31 − −2 V BFR30 − −5 V BFR31 − −2.5 V 1 4 mS 1.5 4.5 mS 0.5 − mS 0.75 − mS gate-source voltage gate-source voltage gate-source cut-off voltage common-source transfer admittance common-source transfer admittance BFR30 ID = 1 mA; VDS = 10 V ID = 50 µA; VDS = 10 V ID = 0.5 nA; VDS = 10 V ID = 1 mA; VDS = 10 V; f = 1 kHz; Tamb = 25 °C ID = 200 µA; VDS = 10 V; f = 1 kHz; Tamb = 25 °C BFR31 yos Cis Crs Vn common source output admittance ID = 1 mA; VDS = 10 V; f = 1 kHz BFR30 − 40 µS BFR31 − 25 µS BFR30 − 20 µS BFR31 − 15 µS ID = 1 mA − 4 pF ID = 0.2 nA − 4 pF ID = 1 mA − 1.5 pF ID = 200 µA − 1.5 pF − 0.5 µV common source output admittance input capacitance feedback capacitance equivalent input noise voltage 1997 Dec 05 UNIT −0.2 BFR31 yos MAX. − BFR30 yfs MIN. ID = 200 µA; VDS = 10 V; f = 1 kHz VDS = 10 V; f = 1 MHz VDS = 10 V; f = 1 MHz; Tamb = 25 °C ID = 200 µA; VDS = 10 V; B = 0.6 to 100 Hz 4 Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA657 10 MDA658 10 ID handbook, halfpage handbook, halfpage ID (mA) (mA) 8 8 max 6 6 4 4 VGS = 0 V −0.5 −1.0 typ 2 2 −1.5 −2.0 min 0 −4 −3 −2 −1 0 0 0 2 4 6 8 VGS (V) BFR30. VDS = 10 V; Tj = 25 °C. 10 VDS (V) BFR30. Tj = 25 °C. Fig.3 Input characteristics. Fig.4 Output characteristics; typical values. MDA659 5 ID (mA) MDA660 5 ID (mA) handbook, halfpage handbook, halfpage 4 4 VGS = 0 V max 3 3 2 2 −0.2 −0.4 typ −0.6 1 0 −5 −1 −1.2 min −4 −3 −2 −1 0 0 VGS (V) 0 BFR31. VDS = 10 V; Tj = 25 °C. 2 4 6 8 10 VDS (V) BFR31. Tj = 25 °C. Fig.5 Input characteristics. 1997 Dec 05 −0.8 1 Fig.6 Output characteristics; typical values. 5 Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA661 6 MDA662 6 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 4 4 VGS = 0V −0.5 −0.2 −1.0 2 −0.4 2 −0.6 −1.5 −0.8 −1 −2.0 0 −1.2 0 25 50 75 100 Tj (°C) 125 25 BFR30. VDS = 10 V. Fig.7 50 75 100 Tj (°C) 125 BFR31. VDS = 10 V. Drain current as a function of junction temperature; typical values. Fig.8 Drain current as a function of junction temperature; typical values. MDA656 10 MDA663 −6 handbook, halfpage handbook, halfpage IGSS (nA) VGS(off) (V) 1 −4 10−1 −2 10−2 BFR30 BFR31 10−3 0 50 100 150 Tj (°C) 0 200 0 2 4 6 8 10 IDSS (mA) VGS = −10 V; VDS = 0. ID = 0.5 nA; VDS = 10 V; VGS = 0; Tj = 25 °C. Fig.9 Fig.10 Gate-source cut-off voltage as a function of drain current; typical values. Gate cut-off current as a function of junction temperature; typical values. 1997 Dec 05 6 Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA664 7.5 MDA665 75 handbook, halfpage handbook, halfpage yfs (mA/V) yos (µA/V) 5 50 BFR31 BFR30 BFR30 BFR31 2.5 25 0 0 0 2 4 ID (mA) 6 0 VDS = 10 V; f = 1 kHz; Tamb = 25 °C. 2 4 ID (mA) 6 VDS = 10 V; f = 1 kHz; Tamb = 25 °C. Fig.11 Common source transfer admittance as a function of drain current; typical values. Fig.12 Common source output admittance as a function of drain current; typical values. MDA666 104 handbook, halfpage MDA667 5 handbook, halfpage Cis (pF) 4 |yos| (µA/V) 103 3 2 102 (1) 1 (2) 10 0 BFR30 10 20 BFR31 30 VDS (V) 0 0 f = 1 kHz; Tamb = 25 °C. (1) ID = 4 mA. (2) ID = 1 mA. −2 −3 −4 −5 VGS (V) VDS = 10 V; f = 1 MHz; Tamb = 25 °C. Fig.13 Common source output admittance as a function of drain-source voltage; typical values. 1997 Dec 05 −1 Fig.14 Input capacitance as a function of gate-source voltage; typical values. 7 Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA668 −1 Crs handbook, halfpage (pF) −0.8 −0.6 −0.4 −0.2 0 0 −1 −2 −3 −4 −5 VGS (V) VDS = 10 V; f = 1 MHz; Tamb = 25 °C. Fig.15 Feedback capacitance as a function of gate-source voltage; typical values. MDA669 104 handbook, full pagewidth en (nV/ Hz) 103 102 10 (1) (2) 1 10 102 103 104 105 f (Hz) VDS = 10 V; Tamb = 25 °C. (1) BFR31; ID = 1 mA. (2) BFR30; ID = 4 mA. Fig.16 Equivalent noise voltage source as a function of frequency; typical values. 1997 Dec 05 8 106 Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA670 104 handbook, full pagewidth in (fA/ Hz) 103 102 (1) 10 (2) 1 10 102 103 104 105 f (Hz) VDS = 10 V; Tamb = 25 °C. (1) BFR31; ID = 1 mA. (2) BFR30; ID = 4 mA. Fig.17 Equivalent noise current source as a function of frequency; typical values. 1997 Dec 05 9 106 Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1997 Dec 05 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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