Vishay DG1408E The advance performance of low insertion loss and low distortion make the device ideal for signal switching Datasheet

DG1408E, DG1409E
www.vishay.com
Vishay Siliconix
3.9 , 8-Channel / Dual 4-Channel,
± 15 V, +12 V, ± 5 V Precision Multiplexers
DESCRIPTION
FEATURES
The DG1408E is a precision analog multiplexer comprising
eight single-ended channels. The DG1409E is a dual four
single-ended channels analog multiplexer. Built on a new
CMOS process, the Vishay Siliconix DG1408E and
DG1409E offer low on-resistance of 3.9 . The low and flat
resistance over the full signal range provides excellent
linearity and low signal distortion. The new CMOS platform
also ensures ultra low power dissipation, minimized
parasitic capacitance, and low charge injection.
• 35 V supply max. rating
The DG1408E and DG1409E can operate from either a
single 4.5 V to 24 V power supply, or from dual ± 4.5 V to
± 15 V power supplies. The DG1408E connects one of eight
inputs to a common output as determined by a 3-bit binary
address (A0, A1, A2). The DG1409E connects one of four
inputs to a common output for both multiplexers as
determined by a 2-bit binary address (A0 and A1).
Break-before-make switching action protects against
momentary crosstalk between adjacent channels. The part
does not require a VL logic supply, while all digital inputs
have 0.8 V and 2 V logic thresholds to ensure low-voltage
TTL / CMOS compatibility. Together with the compact
package, these make the part a great fit for battery operated
systems.
The DG1408E and DG1409E on channel conduct signal
equally well in both directions. In the off state each channel
blocks voltages up to the power supply rails. An enable (EN)
function allows the user to reset the multiplexer /
demultiplexer to all switches off for stacking several
devices.
• 3.9  typical and 4.2  max. on-resistance at
25 °C
• 0.59  on-resistance flatness
• Channel to channel on-resistance match: 0.27 
• Up to 250 mA continuous current
• Supports single and dual supply operation
• Fully specified at ± 15 V, +12 V, and ± 5 V
• Integrated VL supply
• Low voltage logic compatible inputs, VIH = 2 V, VIL = 0.8 V
• BBM (break-before-make switching)
• Low parasitic capacitance:
DG1408E, CS(off) = 13 pF, CD(on) = 104 pF
DG1409E, CS(off) = 13 pF, CD(on) = 70 pF
• Rail to rail signal handling
• QFN16, 4 mm × 4 mm packages
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Low insertion loss
• Low distortion
• Low power consumption
• Compact solution
• Low charge injection over the full signal range
The advance performance of low insertion loss and low
distortion make the device ideal for signal switching and
relay replacement in a wide range of applications.
APPLICATIONS
DG1408E and DG1409E are available in RoHS-compliant,
halogen-free QFN16, 4 mm x 4 mm package.
• Data acquisition system
• Medical and healthcare equipment
• Industrial control and automation
• Test and measurement equipment
• Communication systems
• Battery powered systems
• Sample and hold circuits
• Audio and video signal switching
• Relay replacement
S17-0198-Rev. B, 06-Feb-17
Document Number: 76516
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408E, DG1409E
www.vishay.com
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG1408E
QFN16 (4 mm x 4 mm)
EN
A0
A1
A2
16
15
14
13
DG1409E
QFN16 (4 mm x 4 mm)
Decoder/Driver
A0
A1 GND
16
15
14
13
Decoder/Driver
12 GND
V-
1
S1 2
11 V+
S1a
2
11 S1b
S2 3
10 S5
S2a
3
10 S2b
S3 4
9
S6
S3a
4
9
V-
1
12 V+
5
6
7
8
5
6
7
8
S4
D
S8
S7
S4a
Da
Db
S4b
TRUTH TABLE - DG1408E
A2
X
0
0
0
0
1
1
1
1
EN
A1
X
0
0
1
1
0
0
1
1
A0
X
0
1
0
1
0
1
0
1
S3b
TRUTH TABLE - DG1409E
EN
0
1
1
1
1
1
1
1
1
ON SWITCH
None
1
2
3
4
5
6
7
8
A1
A0
EN
ON SWITCH
X
0
0
1
1
X
0
1
0
1
0
1
1
1
1
None
1
2
3
4
Note
• QFN exposed pad tied to V-
ORDERING INFORMATION
PART
DG1408E
DG1409E
CONFIGURATION
8:1 MUX
Dual 4:1 MUX
TEMPERATURE RANGE
PACKAGE
-40 °C to +125 °C
QFN (4 mm x 4 mm) 16L (variation 2)
ORDERING PART NUMBER
DG1408EEN-T1-GE4
DG1409EEN-T1-GE4
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL PARAMETER
V+
VV+ to VAnalog inputs (S or D)
Digital inputs
CONDITIONS
LIMITS
Reference to GND
Reference to GND
-0.3 V to +25 V
+0.3 V to -25 V
+35
V- (-0.3 V) to V+ (+0.3 V)
GND (-0.3 V) to V+ (+0.3 V)
250
100
500
32
6000
200
QFN (4 mm x 4 mm) 16L, TA = 25 °C
QFN (4 mm x 4 mm) 16L, TA = 125 °C
Maximum pulse switch current
Pulse at 1 ms, 10 % duty cycle
Thermal resistance
QFN (4 mm x 4 mm) 16L
ESD human body model (HBM); per ANSI / ESDA / JEDEC® JS-001
Latch up current, per JESD78D
Temperature
Operating temperature
Max. operating junction temperature
Storage temperature
Maximum continuous switch current
-40 to +125
150
-65 to +150
UNIT
V
mA
°C/W
V
mA
°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
ELECTRICAL
Single supply (V+)
Dual supplies (V+ and V-)
S17-0198-Rev. B, 06-Feb-17
MINIMUM
MAXIMUM
UNIT
4.5
± 4.5
24
± 16.5
V
Document Number: 76516
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408E, DG1409E
www.vishay.com
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
PARAMETER
Analog Switch
Analog signal range
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 15 V, V- = -15 V
VAX, VEN = 2 V, 0.8 V
VANALOG
Drain-source
On-resistance
RDS(on)
On-resistance flatness
Rflat(on)
On-resistance matching
RDS(on)
Source off leakage current
IS(off)
Drain off leakage current
ID(off)
Drain on leakage current
ID(on)
Digital Control
Input, high voltage
Input, low voltage
VINH
VINL
Input leakage
IIN
Digital input capacitance
Dynamic Characteristics
CIN
VS = ± 10 V, IS = -10 mA,
V+ = +13.5 V, V- = -13.5 V
V+ = +16.5 V, V- = -16.5 V,
VS = ± 10 V, VD = ± 10 V
V+ = +16.5 V, V- = -16.5 V,
VS = VD = ± 10 V
VIN = VGND or V+
Transition time
tTRANS
VS1 = +10 V / -10 V, VS8 = -10 V / +10 V,
RL = 100 , CL = 35 pF
Break-before-make time
tOPEN
VS1= VS8 = 10 V,
RL= 100 , CL = 35 pF
Enable turn-on time
tON(EN)
Enable turn-off time
tOFF(EN)
Charge injection
QINJ
Off isolation
Cross talk
OIRR
XTALK
Total harmonic distortion + N
-3dB, bandwidth
Source off capacitance
THD + N
BW
VS1 = 10 V, VS2 - VS8 = 0 V,
RL = 100 , CL = 35 pF
CINJ = 1 nF,
RGEN = 0 , VS = 0 V
DG1408E
DG1409E
CL = 5 pF, RL = 50 , 1 MHz
RL = 100 , 15 Vp-p,
f = 20 Hz to 20 kHz
DG1408E
RL = 50 
DG1409E
CS(off)
Drain off capacitance
CD(off)
Drain on capacitance
CD(on)
Power Supply
Power supply range
f = 1 MHz, VS = 0 V
DG1408E
DG1409E
DG1408E
DG1409E
3.9
4.2
0.59
0.7
0.27
0.4
± 0.027
± 0.55
± 0.018
± 0.45
± 0.05
± 1.5
Positive supply current
I+
Negative supply current
I-
VAX, VEN = 0 V, V+,
V+ = +16.5 V, V- = -16.5 V
-40 °C to
+85 °C
V- to V+
5.1
0.9
0.8
±1
±2
±4
-40 °C to
+125 °C
MIN. /
TYP. /
MAX.
6.1
1.1
1
± 10
± 20
± 35
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
UNIT
V

nA
0.016
3.1
-
2
0.8
± 0.1
-
Min.
Max.
Typ.
Max.
Typ.
133
180
29
100
130
75
105
-31
-103
-58
-64
214
160
120
-
245
10
185
140
-
Typ.
Max.
Typ.
Min.
Typ.
Max.
Typ.
Max.
ns
Typ.
pC
Typ.
dB
0.025
-
-
Typ.
%
55
90
13
85
43
104
70
-
-
Typ.
MHz
GND = 0 V
VAX, VEN = 0 V, 5 V, V+,
V+ = +16.5 V, V- = -16.5 V
S17-0198-Rev. B, 06-Feb-17
+25 °C
3.4
0.0002
-
± 4.5 / ± 16.5
3.8
4
10
0.0085
0.33
1
V
μA
pF
Typ.
Typ.
pF
Typ.
Min. / Max.
Typ.
Max.
Typ.
Max.
V
μA
Document Number: 76516
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408E, DG1409E
www.vishay.com
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 12 V, V- = 0 V
VAX, VEN = 2 V, 0.8 V
+25 °C
-40 °C to
+85 °C
-40 °C to
+125 °C
MIN. /
TYP. /
MAX.
UNIT
-
V
Analog Switch
Analog signal range
Drain-source
On-resistance
0 to V+
VANALOG
RDS(on)
On-resistance flatness
Rflat(on)
On-resistance matching
RDS(on)
Source off leakage current
IS(off)
Drain off leakage current
ID(off)
Drain on leakage current
ID(on)
VS = 0 V / 10 V, IS = -10 mA,
V+ = +10.8 V, V- = 0 V
V+ = +13.2 V, V- = 0 V,
VS = 1 V / 10 V, VD = 10 V / 1 V
V+ = +13.2 V, V- = 0 V,
VS = VD = 1 V / 10 V
7.5
-
-
Typ.
Max.
8
10
12
2
-
-
Typ.
2.2
2.5
3
Max.
0.3
-
-
Typ.
0.5
0.8
1
Max.
± 0.01
-
-
Typ.
± 0.55
±1
±8
Max.
± 0.01
-
-
Typ.
± 0.3
±2
± 20
Max.
± 0.01
-
-
Typ.
± 1.5
±3
± 20
Max.

nA
Digital Control
Input, high voltage
VINH
-
-
2
Min.
Input, low voltage
VINL
-
-
0.8
Max.
Input leakage
IIN
Digital input capacitance
CIN
VIN = VGND or V+
0.018
-
-
Typ.
-
-
± 0.1
Max.
3.1
-
-
Typ.
V
μA
pF
Dynamic Characteristics
Transition time
tTRANS
VS1 = 8 V / 0 V, VS8 = 0 V / 8 V,
RL = 100 , CL = 35 pF
134
-
-
Typ.
190
235
280
Max.
Break-before-make time
tOPEN
VS1= VS8 = 8 V,
RL= 100 , CL = 35 pF
64
-
-
Typ.
-
-
14
Min.
117
-
-
Typ.
151
180
215
Max.
79
-
-
Typ.
105
125
145
Max.
Enable turn-on time
Enable turn-off time
Charge injection
tON(EN)
tOFF(EN)
QINj
Off isolation
OIRR
Cross talk
XTALK
Total harmonic distortion + N
-3dB, bandwidth
Source off capacitance
Drain off capacitance
Drain on capacitance
THD + N
BW
VS1 = 8 V, VS2 - VS8 = 0 V,
RL = 100 , CL = 35 pF
CINJ = 1 nF,
RGEN = 0 , VS = 6 V
DG1408E
5
-
-
DG1409E
-22
-
-
-58
-
-
-64
-
-
0.055
-
-
DG1408E
50
-
-
DG1409E
78
-
-
16
-
-
DG1408E
100
-
-
DG1409E
53
-
-
DG1408E
122
-
-
DG1409E
81
-
-
CL = 5 pF, RL = 50 , 1 MHz
RL = 100 , 6 Vp-p,
f = 20 Hz to 20 kHz
RL = 50 
CS(off)
CD(off)
CD(on)
f = 1 MHz, VS = 6 V
ns
Typ.
pC
Typ.
dB
Typ.
%
Typ.
MHz
Typ.
Typ.
pF
Typ.
Power Supply
Power supply range
Positive supply current
S17-0198-Rev. B, 06-Feb-17
GND = 0 V, V- = 0 V
I+
4.5 / 24
Min. / Max.
VAX, VEN = 0 V, V+,
V+ = +13.2 V, V- = 0 V
2.8
4.8
5.5
Typ.
-
-
8
Max.
VAX, VEN = 5 V,
V+ = 13.2 V, V- = 0 V
2.8
3.1
3.6
Typ.
-
-
8
Max.
V
μA
Document Number: 76516
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408E, DG1409E
www.vishay.com
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
PARAMETER
Analog Switch
Analog signal range
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, V- = -5 V
VAX, VEN = 2 V, 0.8 V
+25 °C
VANALOG
Drain-source
On-resistance
RDS(on)
On-resistance flatness
Rflat(on)
On-resistance matching
RDS(on)
Source off leakage current
IS(off)
Drain off leakage current
ID(off)
Drain on leakage current
ID(on)
Digital Control
Input, high Voltage
Input, low Voltage
VINH
VINL
Input leakage
IIN
Digital input capacitance
Dynamic Characteristics
CIN
VS = ± 3.5 V, IS = -10 mA,
V+ = +4.5 V, V- = -4.5 V
V+ = +5.5 V, V- = -5.5 V,
VS = ± 4.5 V, VD = ± 4.5 V
V+ = +5.5 V, V- = -5.5 V,
VS = VD = ± 4.5 V
VIN = VGND or V+
Transition time
tTRANS
VS1 = +3 V / -3 V, VS8 = -3 V / +3 V,
RL = 100 , CL = 35 pF
Break-before-make time
tOPEN
VS1= VS8 = 3 V,
RL= 100 , CL = 35 pF
Enable turn-on time
tON(EN)
Enable turn-off time
tOFF(EN)
VS1 = 3 V, VS2 - VS8 = 0 V,
RL = 100 , CL = 35 pF
CINJ = 1 nF,
RGEN = 0 , VS = 0 V
DG1408E
DG1409E
8.8
10
2
2.5
0.36
0.55
± 0.04
± 0.55
± 0.04
± 0.3
± 0.05
± 1.5
-40 °C to
+85 °C
V- to V+
12
3
1
±1
±3
±4
-40 °C to
+125 °C
14
3.2
1.5
± 10
± 20
± 30
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
160
210
73
120
160
86
110
7
-15
-58
-64
260
200
132
-
280
10
230
155
-
Typ.
Max.
Typ.
Min.
Typ.
Max.
Typ.
Max.
ns
Typ.
pC
Typ.
dB
Typ.
%
Typ.
MHz
CL = 5 pF, RL = 50 , 1 MHz
THD + N
RL = 100 , 5 Vp-p, f = 20 Hz to 20 kHz
0.07
-
-
DG1408E
DG1409E
46
78
17
109
55
126
83
-
-
Source off capacitance
CS(off)
Drain off capacitance
CD(off)
Drain on capacitance
CD(on)
Power Supply
Power supply range
f = 1 MHz, VS = 0 V
DG1408E
DG1409E
DG1408E
DG1409E
GND = 0 V
Positive supply current
I+
VAX, VEN = 0 V, 3 V, V+,
V+ = +5.5 V, V- = -5.5 V
Negative supply current
I-
VAX, VEN = 0 V, V+,
V+ = +5.5 V, V- = -5.5 V
S17-0198-Rev. B, 06-Feb-17
nA
Min.
Max.
Typ.
Max.
Typ.
OIRR
XTALK
RL = 50 

2
0.8
± 0.1
-
Off isolation
Cross talk
BW
V
-
QINJ
-3dB, bandwidth
UNIT
0.017
3.1
Charge injection
Total harmonic distortion + N
MIN. /
TYP. /
MAX.
1.7
0.08
-
± 4.5 / ± 16.5
2.2
2.4
5
0.12
0.14
1
V
μA
pF
Typ.
Typ.
pF
Typ.
Min. / Max.
Typ.
Max.
Typ.
Max.
V
μA
Document Number: 76516
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408E, DG1409E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10
14
V± = ±12 V
1st line
2nd line
V± = ±10V
6
1000
5
4
100
3
V± = ±13.5 V
2
1
V± = ±15 V
V± = ±16.5 V
IS = -10 mA
-2
V+ =+ 10.8 V
V+ =+ 8 V
10
2
6
10
14
1000
V+ =+ 12 V
V+ =+ 13.2 V
V+ =+ 15 V
8
6
100
4
V+ =+ 18 V
V+ =+ 24 V
IS = -10 mA
10
-6
12
2
0
-18 -14 -10
V+ =+ 5 V
1st line
2nd line
V± = ±7 V
2nd line
RON - On-Resistance (Ω)
V± = ±5.5 V
8
7
10000
V± = ±4.5 V
V± = ±5 V
9
2nd line
RON - On-Resistance (Ω)
16
10000
0
10
0
18
4
8
12
16
20
24
VD - Analog Voltage (V)
2nd line
VD - Analog Voltage (V)
2nd line
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
Axis Title
Axis Title
10000
8
10000
14
+125 °C
+25 °C
+125 °C
1000
8
6
100
4
-40 °C
+85 °C
1000
4
100
2
V± = ±5 V
IS = -10 mA
0
0
10
-5
-4
-3
-40 °C
V± = ±15 V
IS = -10 mA
-2
-1
0
1
2
3
4
10
-15 -12 -9
5
-6
-3
9
12
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
Axis Title
10000
4.5
12
+85 °C
+25 °C
1st line
2nd line
1000
8
6
100
4
-40 °C
V+ = +12 V
IS = -10 mA
10
2
3
V± = ±16.5 V
IN = V+
4.0
3.5
1000
3.0
V+ = +13.2 V
IN = V+
2.5
2.0
V± = ±5.5 V
IN = V+
1.5
100
1.0
0.5
0
1
2nd line
I+ - Supply Current (μA)
+125 °C
10
15
5.0
10000
0
6
VD - Analog Voltage (V)
2nd line
Axis Title
2
3
VD - Analog Voltage (V)
2nd line
14
2nd line
RON - On-Resistance (Ω)
0
1st line
2nd line
2
+25 °C
6
1st line
2nd line
10
2nd line
RON - On-Resistance (Ω)
+85 °C
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
12
4
5
6
7
8
9 10 11 12
0.0
10
-40
-20
0
20
40
60
80
100 120
VD - Analog Voltage (V)
2nd line
Temperature (°C)
2nd line
On-Resistance vs. Analog Voltage
Supply Current vs. Temperature
S17-0198-Rev. B, 06-Feb-17
Document Number: 76516
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408E, DG1409E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
10000
4.5
IS(OFF), VD = -4.5 V, VS = +4.5 V
ID(ON), VD = 4.5 V
IS(OFF), VD = +4.5 V, VS = -4.5 V
-10000
100
-15000
ID(OFF), VD = -4.5 V, VS = +4.5 V
V± = ± 5.5 V
0
V+ =+13.2 V
IN = 5V
2.5
20
40
60
80
V± = ±5.5 V
IN = 5V
1.0
10
-40
100 120
-20
0
20
Axis Title
190
10000
IS(OFF), VD = +10 V, VS = -10 V
-15000
ID(OFF), VD = -10 V, VS = +10 V
100
-20000
-25000
ID(ON), VD = -10 V
V± = ± 16.5 V
-30000
0
20
40
60
80
170
150
90
V± = ±15 V, tOFF
50
V± = ±5 V, t OFF
10
-50
0
50
100
Temperature (°C)
2nd line
Temperature (°C)
2nd line
Leakage Current vs. Temperature
Switching Time vs. Temperature
1000
1st line
2nd line
ID(ON), VD = 10 V
-5000
100
IS(OFF), VD = 10 V, VS = 1 V
ID(OFF), VD = 1 V, VS = 10 V
ID(ON), VD = 1 V
-15000
10
-20
0
20
40
60
80
100 120
2nd line
tON(EN), tOFF(EN) - Switching Time (ns)
ID(OFF), VD = 10 V, VS = 1 V
0
10000
300
IS(OFF), VD = 1 V, VS = 10 V
V+ = +13.2 V
VEN = 3 V
V+= +5 V, tON
250
200
1000
V+ = +12 V, tON
V+ = +24 V, tON
150
100
100
V+ = +24 V, tOFF
50
V+ = +5 V, tOFF
V+ = +12 V, tOFF
0
10
-50
0
50
100
Temperature (°C)
2nd line
Temperature (°C)
2nd line
Leakage Current vs. Temperature
Switching Time vs. Temperature
S17-0198-Rev. B, 06-Feb-17
150
Axis Title
10000
-10000
100
70
Axis Title
2nd line
Leakage Current (pA)
1000
110
100 120
10000
-40
V± = ±15 V, tON
V± = ±5 V, t ON
130
30
10
-20
VEN = 3 V
1st line
2nd line
1000
ID(OFF), VD = +10 V, VS = -10 V
2nd line
tON, tOFF - Switching Time (ns)
0
1st line
2nd line
2nd line
Leakage Current (pA)
ID(ON), VD = 10 V
5000
100 120
Supply Current vs. Temperature
IS(OFF), VD = -10 V, VS = +10 V
-40
80
Leakage Current vs. Temperature
10000
-10000
60
Temperature (°C)
2nd line
Axis Title
-5000
40
Temperature (°C)
2nd line
10000
5000
100
2.0
1.5
10
-20
1000
3.0
ID(ON), VD = -4.5 V
-20000
-40
3.5
1st line
2nd line
-5000
2nd line
I+ - Supply Current (μA)
1000
0
1st line
2nd line
2nd line
Leakage Current (pA)
4.0
ID(OFF), VD = +4.5 V, VS = -4.5 V
5000
V± = ±16.5 V
IN = 5V
1st line
2nd line
10000
150
Document Number: 76516
7
For technical questions, contact: [email protected]
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1000
100
2nd line
Loss, OIRR, XTALK (dB)
10000
10
1G
Axis Title
10
Loss
0
-10
-20
-30
-40
OIRR
XTALK
-50
-60
-70
-80
-90
DG1409E
-100
V± = ±15 V
-110
100K
1M
10M
100M
Frequency (Hz)
2nd line
Frequency (Hz)
2nd line
Loss, OIRR, XTALK vs. Frequency
Loss, OIRR, XTALK vs. Frequency
10000
1000
1st line
2nd line
Axis Title
10
Loss
0
-10
-20
-30
-40
OIRR
-50
XTALK
-60
-70
-80
-90
DG1408E
-100
V± = ±15 V
-110
100K
1M
10M
100M
1st line
2nd line
100
10
1G
Axis Title
Axis Title
10000
10000
V± = ±5V
1000
30.0
-20.0
V+ = +12 V
100
-70.0
-120.0
2nd line
QINJ - Charge Injection (pC)
V± = ±15V
80.0
10
V± = ±15V
DG1409E
90.0
1st line
2nd line
40.0
V± = ±5V
1000
-10.0
-60.0
V+ = +12 V
-110.0
100
-160.0
-210.0
-260.0
10
-15-13-11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15
-15-13-11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15
VS - Analog Voltage (V)
2nd line
VS - Analog Voltage (V)
2nd line
Charge Injection vs. Source Voltage
Charge Injection vs. Source Voltage
Axis Title
Axis Title
0.10
DG1408E
RL = 100 Ω
0.09
0.08
0.08
1000
0.06
0.05
V+ = +12 V, Vsignal = 6 VPP
0.04
100
0.03
0.02
V± = ±15 V, Vsignal = 15 VPP
0.01
2nd lineTHD+N (%)
V± = ±5 V, Vsignal = 5 VPP
0.07
10000
DG1409E
RL = 100 Ω
0.09
1st line
2nd line
2nd lineTHD+N (%)
0.10
10000
V± = ±5 V, Vsignal = 5 VPP
0.07
1000
0.06
0.05
1st line
2nd line
2nd line
QINJ - Charge Injection (pC)
DG1408E
1st line
2nd line
2nd line
Loss, OIRR, XTALK (dB)
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
V+ = +12 V, Vsignal = 6 VPP
0.04
100
0.03
0.02
V± = ±15 V, Vsignal= 15 VPP
0.01
0
10
100
1K
10K
10
100K
0
10
100
1K
10K
Frequency (Hz)
2nd line
Frequency (Hz)
2nd line
THD + N vs. Frequency
THD + N vs. Frequency
S17-0198-Rev. B, 06-Feb-17
10
100K
Document Number: 76516
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
160
DG1408E
V± = ±15 V
100
10000
V± = ±15 V
DG1409E
10000
140
120
80
CD(OFF)
100
40
60
CD(OFF)
0
20
10
-20
-10
0
10
20
10
-20
-10
0
20
Frequency (Hz)
2nd line
Capacitance vs. Analog Voltage
Capacitance vs. Analog Voltage
Axis Title
10000
1000
1st line
2nd line
VIH = -40 °C
100
VIL = 125 °C
2nd line
VT - Switching Threshold (V)
-40 °C to +125 °C
10
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
10000
-40 °C to +125 °C
1000
VIH = -40 °C
1st line
2nd line
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
Frequency (Hz)
2nd line
Axis Title
100
VIL = 125 °C
10
2
4
6
8
10
12
14
16
18
V+ - Single Supply Voltage (V)
2nd line
V± - Double Supply Voltage (V)
2nd line
Switching Threshold vs. Supply Voltage
Switching Threshold vs. Supply Voltage
Axis Title
Axis Title
10000
10000
10000
10 000
V+ = +16.5 V
V- = -16.5 V
1st line
2nd line
1000
100
V+ = +13.2 V
100
V+ = +5.5 V
10
1
10
100
1000
10K
100K
1M
10
10M
2nd line
I+, I-, IGND - Supply Current (μA)
1000
1000
100
1000
I+
1st line
2nd line
2nd line
VT - Switching Threshold (V)
100
Cs(OFF)
40
Cs(OFF)
20
2nd line
I+ - Supply Current (μA)
1000
1st line
2nd line
80
2nd line
Capacitance (pf)
100
60
CD(ON)
1000
1st line
2nd line
2nd line
Capacitance (pf)
CD(ON)
IGND
10
1
100
0.1
I-
0.01
10
1000
100K
10
10M
Input Switching Frequency (Hz)
2nd line
Input Switching Frequency (Hz)
2nd line
Positive Supply Current vs. Switching Frequency
Double Supply Current vs. Switching Frequency
S17-0198-Rev. B, 06-Feb-17
Document Number: 76516
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408E, DG1409E
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Vishay Siliconix
TEST CIRCUITS
+ 15 V
V+
A2
S1
A1
50 
± 10 V
S2 - S7
A0
DG1408E S8
EN
VO
D
GND
+ 2.0 V
± 10 V
V-
Logic
Input
50 %
0V
35 pF
100 
tr < 20 ns
tf < 20 ns
3V
- 15 V
VS1
90 %
Switch
Output
+ 15 V
VO
0V
V+
A1
± 10 V
S1b
A0
50 
DG1409E S4b
GND
tTRANS
tTRANS
± 10 V
S1 ON
S8 ON
VO
Db
EN
+ 2.0 V
90 %
VS8
S1a - S4a, Da
V35 pF
100 
- 15 V
Fig. 1 - Transition Time
+ 15 V
V+
S1
5V
EN
S2 - S8
A0
DG1408E
A1
A2
GND
VO
D
V-
50 
100 
Logic
Input
tr < 20 ns
tf < 20 ns
3V
50 %
0V
35 pF
tON(EN)
- 15 V
tOFF(EN)
0V
+ 15 V
Switch
Output
VO
V+
S1b
90 %
5V
VO
EN
A0
A1
GND
50 
10 %
S1a - S4a, Da
S2b - S4b
DG1409E
Db
V100 
VO
35 pF
- 15 V
Fig. 2 - Enable Switching Time
S17-0198-Rev. B, 06-Feb-17
Document Number: 76516
10
For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
+ 15 V
V+
EN
+ 2.4 V
All S and Da
tr < 20 ns
tf < 20 ns
3V
Logic
Input
50 %
+5V
0V
A0
DG1408E
DG1409E
A1
A2
GND
Db, D
VO
VO
V-
50 
100 
- 15 V
80 %
Switch
Output
35 pF
VO
tOPEN
0V
Fig. 3 - Break-Before-Make Internal
+ 15 V
Rg
V+
SX
Logic
Input
EN
OFF
ON
OFF
0V
A0
Channel
Select
3V
VO
D
A1
CL
1 nF
A2
GND
V-
VO
Switch
Output
VO is the measured voltage due to charge transfer
error Q, when the channel turns off.
- 15 V
QINJ = CL x
VO
Fig. 4 - Charge Injection
+ 15 V
+ 15 V
VIN
VS
VIN
V+
SX
VS
Rg = 50
S8
A0
D
A2
GND
EN
V-
A0
Rg = 50
RL
50
SX
S8
VO
A1
V+
S1
D
A1
A2
GND
EN
- 15 V
Off Isolation = 20 log
Fig. 5 - Off-Isolation
S17-0198-Rev. B, 06-Feb-17
V-
RL
50
- 15 V
VOUT
VIN
VO
Crosstalk = 20 log
VOUT
VIN
Fig. 6 - Crosstalk
Document Number: 76516
11
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+ 15 V
VS
+ 15 V
V+
S1
V+
S1
Rg = 50
Meter
A2
A0
D
VO
A1
A2
GND
EN
V-
Channel
Select
A0
RL
50
D
GND
- 15 V
Insertion Loss = 20 log
S8
A1
VOUT
EN
V-
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
- 15 V
VIN
Fig. 7 - Insertion Loss
Fig. 8 - Source Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76516.
S17-0198-Rev. B, 06-Feb-17
Document Number: 76516
12
For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
QFN 4x4-16L Case Outline
(5)
(4)
VARIATION 1
MILLIMETERS(1)
DIM
VARIATION 2
MILLIMETERS(1)
INCHES
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.75
0.85
0.95
0.029
0.033
0.037
0.75
0.85
0.95
0.029
0.033
0.037
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
0.35
0.010
0.014
0.25
0.35
0.010
2.2
0.079
0.087
2.5
2.7
0.098
A3
b
0.20 ref.
0.25
D
D2
0.30
0.008 ref.
4.00 BSC
2.0
2.1
0.012
0.20 ref.
0.157 BSC
0.083
0.30
4.00 BSC
2.6
e
0.65 BSC
0.026 BSC
0.65 BSC
E
4.00 BSC
0.157 BSC
4.00 BSC
E2
2.0
K
L
2.1
2.2
0.079
0.20 min.
0.5
0.6
0.083
0.087
2.5
0.008 min.
0.7
0.020
0.024
0.008 ref.
2.6
0.3
0.4
0.014
0.157 BSC
0.102
0.106
0.026 BSC
0.157 BSC
2.7
0.098
0.20 min.
0.028
0.012
0.102
0.106
0.008 min.
0.5
0.012
0.016
N(3)
16
16
16
16
Nd(3)
4
4
4
4
Ne(3)
4
4
4
4
0.020
Notes
(1) Use millimeters as the primary measurement.
(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.
(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.
(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.
(6) Package warpage max. 0.05 mm.
ECN: S13-0893-Rev. B, 22-Apr-13
DWG: 5890
Revision: 22-Apr-13
Document Number: 71921
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer

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Revision: 08-Feb-17
1
Document Number: 91000
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