Infineon IPD80R1K4P7 800v coolmos⪠p7 power transistor Datasheet

IPD80R1K4P7
MOSFET
800VCoolMOSªP7PowerTransistor
DPAK
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
tab
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial
gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
•Fullyoptimizedportfolio
Benefits
1
2
3
Drain
Pin 2, Tab
Gate
Pin 1
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Source
Pin 3
Applications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
1.4
Ω
Qg,typ
10
nC
ID
4
A
Eoss @ 500V
0.9
µJ
VGS(th),typ
3
V
ESD class (HBM)
2
-
Type/OrderingCode
Package
IPD80R1K4P7
PG-TO 252
Final Data Sheet
Marking
80R1K4P7
1
RelatedLinks
see Appendix A
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
4
2.7
A
TC=25°C
TC=100°C
-
8.9
A
TC=25°C
-
-
8
mJ
ID=0.6A; VDD=50V
EAR
-
-
0.07
mJ
ID=0.6A; VDD=50V
Avalanche current, repetitive
IAR
-
-
0.6
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0to400V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation
Ptot
-
-
32
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
Continuous diode forward current
IS
-
-
3
A
TC=25°C
IS,pulse
-
-
8.9
A
TC=25°C
dv/dt
-
-
1
V/ns
VDS=0to400V,ISD<=0.7A,Tj=25°C
dif/dt
-
-
50
A/µs VDS=0to400V,ISD<=0.7A,Tj=25°C
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
Diode pulse current
3)
Reverse diode dv/dt
3)
Maximum diode commutation speed
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
3.9
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W Device on PCB, minimal footprint
Thermal resistance, junction - ambient
RthJA
for SMD version
-
35
45
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm2 (one
layer 70µm thickness) copper area
°C/W
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave- & reflow
Tsold
soldering allowed
-
-
260
°C
reflow MSL1
1)
Limited by Tj max. Maximum duty cycle D=0.5
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs
2)
Final Data Sheet
3
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
3.5
V
VDS=VGS,ID=0.07mA
-
10
1
-
µA
VDS=800V,VGS=0V,Tj=25°C
VDS=800V,VGS=0V,Tj=150°C
-
-
1
µA
VGS=20V,VDS=0V
Min.
Typ.
Max.
V(BR)DSS
800
-
Gate threshold voltage
VGS(th)
2.5
Zero gate voltage drain current
IDSS
Gate-source leakage curent incl. zener
IGSS
diode
Drain-source on-state resistance
RDS(on)
-
1.2
3.1
1.4
-
Ω
VGS=10V,ID=1.4A,Tj=25°C
VGS=10V,ID=1.4A,Tj=150°C
Gate resistance
RG
-
1.5
-
Ω
f=250kHz,opendrain
Unit
Note/TestCondition
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
250
-
pF
VGS=0V,VDS=500V,f=250kHz
Output capacitance
Coss
-
6.5
-
pF
VGS=0V,VDS=500V,f=250kHz
Effective output capacitance, energy
related1)
Co(er)
-
8
-
pF
VGS=0V,VDS=0to500V
Effective output capacitance, time
related2)
Co(tr)
-
97
-
pF
ID=constant,VGS=0V,VDS=0to500V
Turn-on delay time
td(on)
-
10
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22Ω
Rise time
tr
-
8
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22Ω
Turn-off delay time
td(off)
-
40
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22Ω
Fall time
tf
-
20
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
1
-
nC
VDD=640V,ID=1.4A,VGS=0to10V
Gate to drain charge
Qgd
-
5
-
nC
VDD=640V,ID=1.4A,VGS=0to10V
Gate charge total
Qg
-
10
-
nC
VDD=640V,ID=1.4A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.5
-
V
VDD=640V,ID=1.4A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V
2)
Final Data Sheet
4
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=1.4A,Tf=25°C
800
-
ns
VR=400V,IF=0.7A,diF/dt=50A/µs
-
5
-
µC
VR=400V,IF=0.7A,diF/dt=50A/µs
-
9
-
A
VR=400V,IF=0.7A,diF/dt=50A/µs
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
5
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
35
30
10 µs
100 µs
101
1 µs
1 ms
10 ms
DC
100
20
ID[A]
Ptot[W]
25
15
10-1
10
10-2
5
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
101
100 µs
10 µs
1 µs
1 ms
0.5
10 ms
DC
ID[A]
ZthJC[K/W]
100
10-1
0.2
10
0
0.1
0.05
0.02
0.01
single pulse
10-2
10-3
100
101
102
103
10-1
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
6
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
12
7
20 V
10 V
8V
7V
20 V 10 V
10
8V
7V
6
6V
5
6V
8
5.5 V
5V
6
ID[A]
ID[A]
4
5.5 V
3
4.5 V
4
2
0
0
5
10
5V
2
4.5 V
1
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
5.5 V
5V
6V
6.5 V
7V
6.4
3.1
10 V
2.6
5.4
98%
RDS(on)[Ω]
RDS(on)[Ω]
2.1
4.4
typ
1.6
3.4
1.1
2.4
1.4
0.6
0
2
4
6
8
10
0.1
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=1.4A;VGS=10V
7
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
10
10
9
9
25 °C
7
7
6
6
VGS[V]
8
ID[A]
8
5
150 °C
5
4
4
3
3
2
2
1
1
0
0
2
4
6
8
10
0
12
640 V
120 V
0
2
VGS[V]
4
6
8
10
125
150
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
9
25 °C
125 °C
8
7
101
IF[A]
EAS[mJ]
6
100
5
4
3
2
1
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=0.6A;VDD=50V
8
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
950
104
900
103
Ciss
102
C[pF]
VBR(DSS)[V]
850
800
101
750
100
Coss
Crss
700
-75
-50
-25
0
25
50
75
100
125
150
175
10-1
0
100
200
Tj[°C]
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
2.00
1.80
1.60
1.40
Eoss[µJ]
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
100
200
300
400
500
600
700
800
VDS[V]
Eoss=f(VDS)
Final Data Sheet
9
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
10
ID
VDS
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
6PackageOutlines
DIM
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
e1
N
H
L
L3
L4
MILLIMETERS
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
2.29 (BSC)
4.57 (BSC)
MIN
0.085
0.000
0.025
0.026
0.195
0.018
0.016
0.235
0.198
0.250
0.185
3
9.40
1.18
0.89
0.51
10.48
1.78
1.27
1.02
DOCUMENT NO.
Z8B00003328
INCHES
0.370
0.046
0.035
0.020
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.205
0.090 (BSC)
0.180 (BSC)
3
0.413
0.070
0.050
0.040
SCALE
0
2.5
0
2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
05-02-2016
REVISION
06
Figure1OutlinePG-TO252,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
7AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
12
Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
RevisionHistory
IPD80R1K4P7
Revision:2016-07-05,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-07-05
Release of final version
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PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
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TrademarksupdatedAugust2015
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet
13
Rev.2.0,2016-07-05
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