IXYS MCD200-18IO1 Thyristor module Datasheet

MCC 200
MCD 200
ITRMS = 2x340 A
ITAVM = 2x196 A
VRRM = 1400-1800 V
Thyristor Modules
VRSM
VRRM
VDSM
VDRM
V
V
3
Type
6 7 1
Symbol
Conditions
ITRMS / IFRMS
ITAVM / IFAVM
TVJ = TVJM
TC = 90°C; 180° sine
TC = 85°C; 180° sine
ITSM / IFSM
TVJ = 45°C;
VR = 0
3
1
2
A
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
8000
8600
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7000
7500
A
A
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
320 000
311 000
A2s
A2s
TVJ = TVJM;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
245 000
236 000
A2s
A2s
TVJ = TVJM;
repetitive; IT = 500 A
f = 50Hz; tP = 200µs;
VD = 2/3 VDRM;
100
A/µs
IG = 0.5 A;
diG/dt = 0.5 A/µs
500
A/µs
1000
V/µs
120
60
W
W
PGAV
20
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
3000
3600
V~
V~
non repetitive; IT = 500 A
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
PGM
TVJ = TVJM; tP = 30 µs
IT = ITAVM; tP = 500 µs
VISOL
50/60 Hz, RMS;
IISOL ≤ 1 mA;
Md
Mounting torque (M6)
Terminal connection torque (M6)
Weight
Typical including screws
4
MCD
Maximum Ratings
(dv/dt)cr
5
5 4 2
340
196
216
(di/dt)cr
6 7
1
MCC
1500 1400 MCC 200-14io1 MCD 200-14io1
1700 1600 MCC 200-16io1 MCD 200-16io1
1900 1800 MCC 200-18io1 MCD 200-18io1
∫i2dt
3
5 4 2
t = 1 min
t=1s
Features
• International standard package
• Direct copper bonded Al2O3 -ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Keyed gate/cathode twin pins
Applications
• Motor control
• Power converter
• Heat and temperature control for
industrial furnaces and chemical
processes
• Lighting control
• Contactless switches
Advantages
• Space and weight savings
• Simple mounting
• Improved temperature and power
cycling
• Reduced protection circuits
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
125
g
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
448
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
1-3
MCC 200
MCD 200
Symbol
Conditions
IRRM, IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
VT / VF
IT, IF = 200 A; TVJ = 25°C
VT0
rT
For power-loss calculations only (TVJ = 125°C)
VGT
VD = 6 V;
IGT
VD = 6 V;
VGD
IGD
TVJ = TVJM;
IL
Characteristic Values
15
mA
10
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
V
1.20
V
0.8
1.0
V
mΩ
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
2
3
150
220
V
V
mA
mA
VD = 2/3 VDRM
0.25
10
V
mA
TVJ = 25°C; tP = 30 µs; VD = 6 V
IG = 0.5 A; diG/dt = 0.5 A/µs
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
150
mA
tgd
TVJ = 25°C; VD = ½ VDRM
IG = 0.5 A; diG/dt = 0.5 A/µs
2
µs
6
5
3
1
1
4
2
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD, TVJ = 130°C
0.1
10-3
10-2
10-1
100
101
A 102
IG
Fig. 1 Gate trigger characteristics
100
TVJ = 25°C
tgd
tq
TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ.
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM
200
µs
QS
IRM
TVJ = TVJM; IT = 300 A, -di/dt = 50 A/µs
550
235
µC
A
RthJC
per thyristor; DC current
per module
per thyristor; DC current
per module
µs
limit
typ.
10
RthJH
dS
dA
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
0.13
0.065
0.18
0.09
K/W
K/W
K/W
K/W
12.7
9.6
50
mm
mm
m/s2
1
0.01
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180R (R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Dimensions in mm
(1 mm = 0.0394")
0.1
A
1
10
IG
Fig. 2 Gate trigger delay time
500
A
IT , IF
400
300
200
TVJ = 125°C
100
TVJ = 25°C
0
0.0
0.4
0.8
1.2
1.6 V 2.0
VT, VF
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
448
Fig. 3 Forward current versus
voltage drop
2-3
MCC 200
MCD 200
106
8000
400
ITAVM A
IFAVM
2
I dt
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 125°C
A
6000
DC
180° sin
120°
60°
30°
A2s
300
TVJ = 45°C
ITSM
IFSM
TVJ = 125°C
105
4000
200
100
2000
104
0
0.001
0.01
s
0.1
1
0
1
10
ms
0
25
50
75
t
t
Fig. 5 Ι2dt versus time (1-10 ms)
Fig. 4 Surge overload current
ITSM / FSM: Crest value, t: duration
400
Ptot
2100
W
1800
100 125 C 150
TC
Fig. 6 Maximum forward current
at case temperature
W
RthKA K/W
300
0.1
0.2
0.3
0.4
0.6
0.8
1.0
200
DC
180° sin
120°
60°
30°
100
RthKA K/W
Ptot
0.03
0.04
0.06
0.08
0.1
0.15
0.2
1500
1200
900
Circuit
B6
600
300
0
0
0
100
200 A 300
ITRMS/IFRMS
0
25
50
75
100
125
C
150
0
200
TA
400 A 600 0
25
50
75
Fig. 7 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
Fig. 8
100
C
150
125
TA
IdAVM
3~ rectifier bridge: Power dissipation versus
direct output current and ambient temperature
0.30
K/W
ZthJC
0.25
30°
0.20
60°
Constants for ZthJC calculation (DC):
0.15
i
120°
180°
DC
0.10
1
2
3
4
5
0.05
0.00
10-3
10-2
10-1
100
101
s
Rthi (K/W)
ti (s)
0.01
0.0065
0.025
0.0615
0.027
0.00014
0.019
0.18
0.52
1.6
102
t
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
448
Fig. 9 Transient thermal impedance junction to case at various condition angles (per thyristor or diode)
3-3
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