Vishay BZD27C130P-M Zener diodes with surge current specification Datasheet

BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
• Sillicon planar Zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s at
terminals
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
• Halogen-free according to IEC 61249-2-21 definition
UNIT
VZ range nom.
3.6 to 200
V
Test current IZT
5 to 100
mA
VZ specification
Pulse current
Int. construction
Single
ORDERING INFORMATION
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZD27C3V6P-M to
BZD27C200P-M
DEVICE NAME
BZD27C3V6P-M to
BZD27C200P-M-series-08
3000 per 7" reel (8mm tape)
15 000/box
BZD27C3V6P-M to
BZD27C200P-M
BZD27C3V6P-M to
BZD27C200P-M-series-18
10 000 per 13" reel (8 mm tape)
10 000/box
PACKAGE
PACKAGE NAME
WEIGHT
DO-219AB (SMF)
15 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
SOLDERING
CONDITIONS
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Non repetitive peak surge power
dissipation (2)
TEST CONDITION
SYMBOL
VALUE
UNIT
TL = 80 °C
Ptot
2300
mW
TA = 25 °C (1)
Ptot
800
mW
100 μs square pulse
PZSM
300
W
PRSM
150
W
PRSM
100
W
RthJL
30
K/W
RthJA
180
K/W
10/1000 μs waveform
(BZD27-C7V5P-M to BZD27-C100P-M)
10/1000 μs waveform
(BZD27-C110P-M to BZD27-C200P-M)
Junction to lead
Junction to ambient air
Mounted on epoxy-glass PCB with 3 mm x
3 mm Cu pads ( 40 μm thick)
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
- 55 to + 150
°C
Notes
(1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2) T = 25 °C prior to surge
J
Rev. 1.2, 29-Nov-11
Document Number: 83307
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
VZ at IZT1
IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
3.6
3.8
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
IR at VR
ZZ at IZT1
VZ at IZT1
μA
MAX.
100
100

V
1
%/°C
TYP.
MAX.
MIN.
MAX.
4
8
- 0.14
- 0.04
BZD27C3V6P-M
N0
3.4
BZD27C3V9P-M
N1
3.7
3.9
4.1
100
50
1
4
8
- 0.14
- 0.04
BZD27C4V3P-M
N2
4
4.3
4.6
100
25
1
4
7
- 0.12
- 0.02
BZD27C4V7P-M
N3
4.4
4.7
5
100
10
1
3
7
- 0.1
0
BZD27C5V1P-M
N4
4.8
5.1
5.4
100
5
1
3
6
- 0.08
0.02
BZD27C5V6P-M
N5
5.2
5.6
6
100
10
2
2
4
- 0.04
0.04
BZD27C6V2P-M
N6
5.8
6.2
6.6
100
5
2
2
3
- 0.01
0.06
BZD27C6V8P-M
N7
6.4
6.8
7.2
100
10
3
1
3
0
0.07
BZD27C7V5P-M
N8
7
7.5
7.9
100
50
3
1
2
0
0.07
BZD27C8V2P-M
N9
7.7
8.2
8.7
100
10
3
1
2
0.03
0.08
BZD27C9V1P-M
O0
8.5
9.1
9.6
50
10
5
2
4
0.03
0.08
BZD27C10P-M
O1
9.4
10
10.6
50
7
7.5
2
4
0.05
0.09
BZD27C11P-M
O2
10.4
11
11.6
50
4
8.2
4
7
0.05
0.1
BZD27C12P-M
O3
11.4
12
12.7
50
3
9.1
4
7
0.05
0.1
BZD27C13P-M
O4
12.4
13
14.1
50
2
10
5
10
0.05
0.1
BZD27C15P-M
O5
13.8
15
15.6
50
1
11
5
10
0.05
0.1
BZD27C16P-M
O6
15.3
16
17.1
25
1
12
6
15
0.06
0.11
BZD27C18P-M
O7
16.8
18
19.1
25
1
13
6
15
0.06
0.11
BZD27C20P-M
O8
18.8
20
21.2
25
1
15
6
15
0.06
0.11
BZD27C22P-M
O9
20.8
22
23.3
25
1
16
6
15
0.06
0.11
BZD27C24P-M
P0
22.8
24
25.6
25
1
18
7
15
0.06
0.11
BZD27C27P-M
P1
25.1
27
28.9
25
1
20
7
15
0.06
0.11
BZD27C30P-M
P2
28
30
32
25
1
22
8
15
0.06
0.11
BZD27C33P-M
P3
31
33
35
25
1
24
8
15
0.06
0.11
BZD27C36P-M
P4
34
36
38
10
1
27
21
40
0.06
0.11
BZD27C39P-M
P5
37
39
41
10
1
30
21
40
0.06
0.11
BZD27C43P-M
P6
40
43
46
10
1
33
24
45
0.07
0.12
BZD27C47P-M
P7
44
47
50
10
1
36
24
45
0.07
0.12
BZD27C51P-M
P8
48
51
54
10
1
39
25
60
0.07
0.12
BZD27C56P-M
P9
52
56
60
10
1
43
25
60
0.07
0.12
BZD27C62P-M
Q0
58
62
66
10
1
47
25
80
0.08
0.13
BZD27C68P-M
Q1
64
68
72
10
1
51
25
80
0.08
0.13
BZD27C75P-M
Q2
70
75
79
10
1
56
30
100
0.08
0.13
BZD27C82P-M
Q3
77
82
87
10
1
62
30
100
0.08
0.13
BZD27C91P-M
Q4
85
91
96
5
1
68
60
200
0.08
0.13
BZD27C100P-M
Q5
94
100
106
5
1
75
60
200
0.09
0.13
BZD27C110P-M
Q6
104
110
116
5
1
82
80
250
0.09
0.13
BZD27C120P-M
Q7
114
120
127
5
1
91
80
250
0.09
0.13
BZD27C130P-M
Q8
124
130
141
5
1
100
110
300
0.09
0.13
BZD27C150P-M
Q9
138
150
156
5
1
110
130
300
0.09
0.13
BZD27C160P-M
R0
153
160
171
5
1
120
150
350
0.09
0.13
BZD27C180P-M
R1
168
180
191
5
1
130
180
400
0.09
0.13
BZD27C200P-M
R2
188
200
212
5
1
150
200
500
0.09
0.13
Notes
• Electrical characteristics when used as regulator diodes
• Maximum VF = 1.2 V, at IF = 0.2 A
(1) Pulse test: t  5 ms
p
Rev. 1.2, 29-Nov-11
Document Number: 83307
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
VZ at IZT1
IZT1
IR at VR
VC at IRSM (1)
VZ at IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
μA
V
MAX.
V
A
MAX.
%/C
MIN.
MAX.
BZD27C7V5P-M
N8
7
7.5
7.9
100
1500
6.2
11.3
13.3
0
0.07
BZD27C8V2P-M
N9
7.7
8.2
8.7
100
1200
6.8
12.3
12.2
0.03
0.08
BZD27C9V1P-M
O0
8.5
9.1
9.6
50
100
7.5
13.3
11.3
0.03
0.08
BZD27C10P-M
O1
9.4
10
10.6
50
20
8.2
14.8
10.1
0.05
0.09
BZD27C11P-M
O2
10.4
11
11.6
50
5
9.1
15.7
9.6
0.05
0.1
BZD27C12P-M
O3
11.4
12
12.7
50
5
10
17
8.8
0.05
0.1
BZD27C13P-M
O4
12.4
13
14.1
50
5
11
18.9
7.9
0.05
0.1
BZD27C15P-M
O5
13.8
15
15.6
50
5
12
20.9
7.2
0.05
0.1
BZD27C16P-M
O6
15.3
16
17.1
25
5
13
22.9
6.6
0.06
0.11
BZD27C18P-M
O7
16.8
18
19.1
25
5
15
25.6
5.9
0.06
0.11
BZD27C20P-M
O8
18.8
20
21.2
25
5
16
28.4
5.3
0.06
0.11
BZD27C22P-M
O9
20.8
22
23.3
25
5
18
31
4.8
0.06
0.11
BZD27C24P-M
P0
22.8
24
25.6
25
5
20
33.8
4.4
0.06
0.11
BZD27C27P-M
P1
25.1
27
28.9
25
5
22
38.1
3.9
0.06
0.11
BZD27C30P-M
P2
28
30
32
25
5
24
42.2
3.6
0.06
0.11
BZD27C33P-M
P3
31
33
35
25
5
27
46.2
3.2
0.06
0.11
BZD27C36P-M
P4
34
36
38
10
5
30
50.1
3
0.06
0.11
BZD27C39P-M
P5
37
39
41
10
5
33
54.1
2.8
0.06
0.11
BZD27C43P-M
P6
40
43
46
10
5
36
60.7
2.5
0.07
0.12
BZD27C47P-M
P7
44
47
50
10
5
39
65.5
2.3
0.07
0.12
BZD27C51P-M
P8
48
51
54
10
5
43
70.8
2.1
0.07
0.12
BZD27C56P-M
P9
52
56
60
10
5
47
78.6
1.9
0.07
0.12
BZD27C62P-M
Q0
58
62
66
10
5
51
86.5
1.7
0.08
0.13
BZD27C68P-M
Q1
64
68
72
10
5
56
94.4
1.6
0.08
0.13
BZD27C75P-M
Q2
70
75
79
10
5
62
103.5
1.5
0.08
0.13
BZD27C82P-M
Q3
77
82
87
10
5
68
114
1.3
0.08
0.13
BZD27C91P-M
Q4
85
91
96
5
5
75
126
1.2
0.09
0.13
BZD27C100P-M
Q5
94
100
106
5
5
82
139
1.1
0.09
0.13
BZD27C110P-M
Q6
104
110
116
5
5
91
139
0.72
0.09
0.13
BZD27C120P-M
Q7
114
120
127
5
5
100
152
0.65
0.09
0.13
BZD27C130P-M
Q8
124
130
141
5
5
110
169
0.59
0.09
0.13
BZD27C150P-M
Q9
138
150
156
5
5
120
187
0.53
0.09
0.13
BZD27C160P-M
R0
153
160
171
5
5
130
205
0.48
0.09
0.13
BZD27C180P-M
R1
168
180
191
5
5
150
229
0.43
0.09
0.13
BZD27C200P-M
R2
188
200
212
5
5
160
254
0.39
0.09
0.13
Notes
• Electrical characteristics when used as protection diodes
(1) Non-repetitive peak reverse current in accordance with ”IEC 60-1, section 8” (10/1000 μs pulse); see fig. 5.
Rev. 1.2, 29-Nov-11
Document Number: 83307
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PRSM - Max. Pulse Power Dissipation (W)
IF - Forward Current (A)
10
Max. VF
Typ. VF
1
0.1
0.6
0.8
17411
1.0
1.2
1.4
160
140
120
100
80
60
40
20
0
1.6
VF - Forward Voltage (V)
0
50
Fig. 1 - Forward Current vs. Forward Voltage
100
150
200
VZnom - Zener Voltage (V)
17414
Fig. 4 - Maximum Pulse Power Dissipation vs. Zener Voltage
CD - Typ. Junction Capacitance (pF)
10 000
C5V1P
C6V8P
IRSM
(%)
C18P
C12P
t1 = 10 µs
t2 = 1000 µs
100
1000
90
50
100
C27P
C51P
10
C200P
10
0
0.5
17412
1.0
1.5
2.0
2.5
17415
VR - Reverse Voltage (V)
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
t
t1
3.0
t2
Fig. 5 - Non-Repetitive Peak Reverse Current Pulse Definition
Ptot - Power Dissipation (W)
3.0
Tie point temperature
2.5
2.0
1.5
1.0
Ambient temperature
0.5
0
0
17413
25
50
75
100
125
150
Tamb - Ambient Temperature (°C)
Fig. 3 - Power Dissipation vs. Ambient Temperature
Rev. 1.2, 29-Nov-11
Document Number: 83307
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO219-AB (SMF)
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.05 (0.002)
1.7 (0.067)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
2.9 (0.114)
17247
Rev. 1.2, 29-Nov-11
Document Number: 83307
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
Blistertape Dimensions for SMF in millimeters
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 1.2, 29-Nov-11
Document Number: 83307
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 12-Mar-12
1
Document Number: 91000
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