CREE CGH40120F 120 w, rf power gan hemt Datasheet

CGH40120F
120 W, RF Power GaN HEMT
Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40120F, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40120F ideal for linear and
compressed amplifier circuits. The transistor is available in a flange
Package Type
s: 440193
PN: CGH4012
0F
package.
FEATURES
APPLICATIONS
•
Up to 2.5 GHz Operation
•
2-Way Private Radio
•
20 dB Small Signal Gain at 1.0 GHz
•
Broadband Amplifiers
•
15 dB Small Signal Gain at 2.0 GHz
•
Cellular Infrastructure
•
120 W Typical PSAT
•
Test Instrumentation
•
70 % Efficiency at PSAT
•
Class A, AB, Linear amplifiers suitable for
•
28 V Operation
15
Rev 3.0 - May 20
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDSS
84
Volts
Conditions
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
30
mA
25˚C
Maximum Drain Current
IDMAX
12
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
80
in-oz
RθJC
1.39
˚C/W
TC
-40, +150
˚C
1
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature3,4
85˚C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH40120F at PDISS = 115 W.
4
See also, the Power Dissipation De-rating Curve on Page 7.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 28.8 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 1.0 A
Saturated Drain Current2
IDS
23.2
28.0
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 28.8 mA
DC Characteristics1
RF Characteristics (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
3
Small Signal Gain
GSS
17.5
19
–
dB
VDD = 28 V, IDQ = 1.0 A
Power Output4
PSAT
100
120
–
W
VDD = 28 V, IDQ = 1.0 A
η
55
70
–
%
VDD = 28 V, IDQ = 1.0 A, POUT = PSAT
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 1.0 A,
POUT = 100 W CW
Input Capacitance
CGS
–
35.3
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
9.1
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
1.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency5
Output Mismatch Stress
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGH40120F-AMP
4
PSAT is defined as IG = 2.8 mA.
5
Drain Efficiency = POUT / PDC
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Gain and Input Return Loss vs Frequency measured in
Broadband Amplifier Circuit CGH40120F-AMP
VDD = 28 V, IDQ = 1.0 A
25
25
CGH40120F S21
20
15
15
5
10
-5
5
-15
0
800
900
1000
1100
1200
1300
1400
1500
1600
1700
Input Return Loss (dB)
Gain (dB)
CGH40120F S11
-25
1800
Frequency (MHz)
Gain, Output Power and PAE vs Frequency measured in
Broadband Amplifier Circuit CGH40120F-AMP
VDD = 28 V, IDQ = 1.0 A
30
150
Output Power
125
Gain
Gain (dB)
20
100
15
75
PAE
10
50
Gain
5
0
1200
1250
Output Power
1300
PAE
1350
Output Power (W), PAE (%)
25
25
0
1400
Frequency (MHz)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical 800 MHz - 1300 MHz Performance
Gain, Output Power, and Power Added Efficiency vs Frequency
measured in 0.8-1.3 GHz Amplifier Circuit 03-000255
VDD = 28 V, IDQ = 1.0 A
30
150
25
125
Gain (dB)
20
100
Gain (Assoc)
PSAT
15
75
PAE
10
50
5
Small Signal Gain (dB)
Assoc. Gain (dB)
Psat (W)
PAE (%)
25
0
750
800
850
900
950
1000
1050
1100
1150
1200
Power (W) , PAE (%)
Gain (SS)
1250
0
1350
1300
Frequency (MHz)
Typical Digital Video Broadcast (DVB) Performance
160
80
150
75
140
70
130
65
120
60
Output Power (W)
110
100
1350
55
PAE (%)
1375
1400
1425
1450
1475
1500
Power Added Efficiency (PAE) (%)
Output Power (W)
Output Power and Power Added Efficiency vs Frequency
measured in DVB Amplifier Circuit 03-000256
VDD = 32 V, IDQ = 1.0 A
1525
50
1550
Frequency (MHz)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Digital Video Broadcast (DVB) Performance
Small Signal Gain and Return Loss vs Frequency of the CGH40120F
measured in DVB Amplifier Circuit 03-000256.
VDD = 32 V, IDQ = 1.0 A
25
19.30
15
15
5
5
-5
-5
-15
-15
-21.41
S21
-25
Return Loss (dB)
Gain (dB)
25
-25
S11
-35
1200
1300
1400
1500
1600
1700
-35
1800
Frequency (MHz)
Typical Constellation Chart and Spectral Mask using 16QAM OFDM
for a CGH40120F in DVB Amplifier Circuit 03-000256 at 1450 MHz.
VDD = 32 V, IDQ = 1.0 A, PAVE = 40 W, Drain Efficiency = 40 %, Signal PAR = 5.3 dB
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
K Factor
MAG (dB)
CGH40120F
Simulated Maximum Available Gain
and K Factor of the CGH40120F
VDD = 28 V, IDQ = 1.0 A
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120F
VDD = 28 V, IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A > 250 V
JEDEC JESD22 A114-D
Charge Device Model
CDM
1 < 200 V
JEDEC JESD22 C101-C
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH40120F CW Power Dissipation De-rating Curve
CGH40120F Power Dissipation De-Rating Curve
120
Power Dissipation (W)
100
80
Note 1
60
40
20
0
0
25
50
75
100
125
150
Maximum Temperature (°C)
175
200
225
250
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
500
2 + j3.3
5.14 + j0.04
1000
0.81 + j0.18
4.68 - j0.26
1500
0.75 - j1.56
3.44 - j0.77
2000
0.84 - j3
2.34 - j0.95
2500
1.2 - j4.43
2.7 - j2.56
3000
1.09 - j5.9
3.06 - j3.82
Note 1. VDD = 28V, IDQ = 1.0 A in the 440193 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be used to maintain
amplifier stability.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
C1, C30
Description
Qty
CAP, 27 PF +/- 5%, 250V, 0805, ATC 600F
2
C2
CAP, 1.2 pF, +/- 0.1 pF, 0603, ATC 600S
1
C3, C4
CAP, 3.9 pF, +/- 0.1 pF, 0603, ATC 600S
2
CAP, 4.7 pF, +/- 0.1 pF, 0603, ATC 600S
2
C11, C31
C5, C6
CAP, 27pF,+/-5%, 0603, ATC 600S
2
C12, C32
CAP, 100 pF, +/- 5%, 0603, ATC 600S
2
C13, C33
CAP, 470 pF +/- 5%,100 V, 0603, Murata
2
C14, C34
CAP, CER, 33000 pF, 100V, X7R, 0805, Murata
2
C15
CAP, 10 uF, 16V, SMT, TANTALUM
1
C35
CAP, CER, 1.0 uF, 100V, +/- 10%, X7R, 1210
1
C36
CAP, 33 uF, 100V, ELECT, FK, SMD
1
C20, C21
CAP, 5.6 PF +/- 0.1 pF, 0805, ATC 600F
2
C22, C23
CAP, 0.5 PF +/- 0.05 pF, 0805, ATC 600F
2
C24, C25
CAP, 1.2 PF +/- 0.1 pF, 0805, ATC 600F
2
R1
RES, 1/16W, 0603, 511 Ohms (≤5% tolerance)
1
R2
RES, 1/16W, 0603, 5.1 Ohms (≤5% tolerance)
1
L1
IND, 6.8 nH, 0603, L-14C6N8ST
1
L2
IND, FERRITE, 220 OHM, 0805, BLM21PG221SN1
1
CONN, N-Type, Female, 0.500 SMA Flange
2
J1, J2
J3
Q1
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
1
PCB, RO4003, Er = 3.38, h = 32 mil
1
CGH40120F
1
CGH40120F-AMP Demonstration Amplifier Circuit
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH40120F
(Small Signal, VDS = 28 V, IDQ = 1.0 A, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.961
-177.60
4.19
80.16
0.006
13.42
0.807
-179.57
600 MHz
0.961
-178.85
3.49
77.38
0.006
15.30
0.808
-179.85
700 MHz
0.961
-179.89
2.99
74.72
0.006
17.30
0.810
179.89
800 MHz
0.961
179.22
2.61
72.16
0.007
19.36
0.811
179.66
900 MHz
0.961
178.41
2.32
69.66
0.007
21.47
0.813
179.42
1.0 GHz
0.960
177.67
2.09
67.22
0.007
23.59
0.815
179.18
1.1 GHz
0.960
176.96
1.89
64.83
0.007
25.71
0.817
178.94
1.2 GHz
0.960
176.28
1.73
62.49
0.007
27.81
0.819
178.68
1.3 GHz
0.960
175.63
1.60
60.18
0.007
29.86
0.822
178.41
1.4 GHz
0.960
174.99
1.48
57.92
0.008
31.86
0.824
178.13
1.5 GHz
0.960
174.36
1.38
55.69
0.008
33.80
0.826
177.83
1.6 GHz
0.960
173.73
1.30
53.50
0.008
35.65
0.828
177.52
1.7 GHz
0.960
173.11
1.22
51.35
0.008
37.40
0.830
177.19
1.8 GHz
0.959
172.49
1.15
49.23
0.009
39.06
0.832
176.84
1.9 GHz
0.959
171.86
1.10
47.15
0.009
40.61
0.835
176.47
2.0 GHz
0.959
171.23
1.04
45.09
0.010
42.04
0.837
176.09
2.1 GHz
0.958
170.59
0.99
43.07
0.010
43.36
0.839
175.69
2.2 GHz
0.958
169.95
0.95
41.08
0.011
44.56
0.840
175.28
2.3 GHz
0.957
169.29
0.91
39.12
0.011
45.64
0.842
174.85
2.4 GHz
0.957
168.63
0.88
37.18
0.012
46.60
0.844
174.40
2.5 GHz
0.956
167.95
0.85
35.28
0.012
47.45
0.845
173.93
2.6 GHz
0.956
167.26
0.82
33.39
0.013
48.18
0.847
173.45
2.7 GHz
0.955
166.56
0.79
31.53
0.014
48.80
0.848
172.94
2.8 GHz
0.954
165.84
0.77
29.68
0.014
49.32
0.849
172.43
2.9 GHz
0.953
165.10
0.75
27.86
0.015
49.74
0.850
171.89
3.0 GHz
0.952
164.34
0.73
26.04
0.016
50.05
0.851
171.33
3.2 GHz
0.950
162.75
0.70
22.46
0.018
50.40
0.852
170.17
3.4 GHz
0.948
161.07
0.68
18.91
0.020
50.38
0.852
168.93
3.6 GHz
0.944
159.27
0.66
15.37
0.023
50.02
0.852
167.61
3.8 GHz
0.941
157.33
0.65
11.82
0.025
49.32
0.850
166.19
4.0 GHz
0.936
155.23
0.64
8.23
0.029
48.30
0.848
164.68
4.2 GHz
0.931
152.94
0.64
4.57
0.033
46.94
0.844
163.06
4.4 GHz
0.925
150.43
0.64
0.80
0.037
45.24
0.840
161.32
4.6 GHz
0.917
147.66
0.65
-3.12
0.042
43.18
0.834
159.44
4.8 GHz
0.908
144.59
0.66
-7.23
0.048
40.72
0.826
157.41
5.0 GHz
0.896
141.14
0.68
-11.60
0.055
37.83
0.817
155.20
5.2 GHz
0.883
137.25
0.71
-16.29
0.064
34.45
0.805
152.81
5.4 GHz
0.866
132.84
0.74
-21.37
0.074
30.53
0.791
150.19
5.6 GHz
0.845
127.78
0.78
-26.94
0.086
25.97
0.774
147.33
5.8 GHz
0.820
121.95
0.83
-33.09
0.101
20.69
0.755
144.21
6.0 GHz
0.789
115.17
0.88
-39.95
0.118
14.58
0.731
140.79
To download the s-parameters in s2p format, go to the CGH40120F Product Page and click on the documentation tab.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH40120F (Package Type ­— 440193)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH40120F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH40120F-TB
CGH40120F-AMP
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH40120F Rev 3.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
13
CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Similar pages