PROCESS CP343V High Voltage MOSFET N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 55 x 55 MILS Die Thickness 7.1 MILS Gate Bonding Pad Area 7.3 x 7.3 MILS Source Bonding Pad Area 43 x 43 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 7,774 PRINCIPAL DEVICE TYPE CXDM1002N R0 (19-March 2013) w w w. c e n t r a l s e m i . c o m PROCESS CP343V Typical Electrical Characteristics R0 (19-March 2013) w w w. c e n t r a l s e m i . c o m