BWTECH MSS34N40 N-channel 40-v (d-s) mosfet Datasheet

Preliminary_MSS34N40
N-Channel 40-V (D-S) MOSFET
Features
• Low RDS (on) trench technology
• Low thermal impedance
• Fast switching speed
• RoHS compliant package
Applications
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MSS34N40]
© Bruckewell Technology Corporation Rev. A -2014
Preliminary_MSS34N40
N-Channel 40-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
PD
±34
A
a
±27
A
b
5.0
A
a
2.3
W
a
3.2
W
±50
A
-55 to +150
°C
Total Power Dissipation (TA=25°C)
Total Power Dissipation (TA=70°C)
a
Continuous Source Current (Diode Conduction)
TSTG
Operating Junction and Storage Temperature Range
Thermal Data
Symbol
RθJA
V
V
IS
RθJA
40
±20
Drain Current -Continuous (TA=25°C)
Pulsed Drain Current
Unit
a
Drain Current -Continuous (TA=70°C)
IDM
Value
Parameter
Max.
a
25
a
65
Maximum Junction-to- Ambient ( t<=10 sec )
Units
°C/W
Maximum Junction-to- Ambient ( Steady State )
Note:
1. Surface Mounted on 1“x1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Static
Symbol
Test Conditions
VSD
VGS(th)
IDSS
Min
Typ.
Max.
Units
VGS = 0 V , IS = 2.1 A
--
1.1
--
V
VDS = VGS , ID = 250μA
1
--
3
V
--
--
VDS = 32 V , VGS = 0 V
VDS = 32 V , VGS = 0 V , TJ = 55°C
1
uA
25
IGSS
VGS = 20 V , VDS = 0 V
--
--
±100
nA
ID(ON)
VDS = 5 V , VGS = 10 V
34
--
--
A
--
--
RDS(ON)
GFS
VGS = 10 V,ID = 7.5 A
VGS = 4.5 V,ID = 7 A
Qg
Test Conditions
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Publication Order Number: [MSS34N40]
mΩ
5
22
VDS = 15 V,ID = 7.5 A
Dynamic Characteristics
Symbol
Parameter
3
VDS = -6 V , ID = -2.8 A,
VGS = -4.5 V
S
Min
Typ.
Max.
Units
--
50
--
nC
--
20
--
nC
--
20
--
nC
© Bruckewell Technology Corporation Rev. A -2014
Preliminary_MSS34N40
N-Channel 40-V (D-S) MOSFET
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
40
--
ns
td(on)
Turn-On Dalay Time
tr
Rise Time
VDD = 25 V , ID = 34 A,
--
60
--
ns
td(off)
Turn-Off Dalay Time
RL = 25 Ω, VGEN = 10 V
--
150
--
ns
tf
Fall Time
--
90
--
ns
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Publication Order Number: [MSS34N40]
© Bruckewell Technology Corporation Rev. A -2014
Preliminary_MSS34N40
N-Channel 40-V (D-S) MOSFET
Disclaimer
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described in the product specification is suitable for use in a particular application. Parameters
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may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSS34N40]
© Bruckewell Technology Corporation Rev. A -2014
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