IXYS GUO40-12NO1 Standard rectifier Datasheet

GUO40-12NO1
3~
Rectifier
Standard Rectifier
VRRM = 1200 V
I DAV =
40 A
I FSM =
370 A
3~ Rectifier Bridge
Part number
GUO40-12NO1
Backside: isolated
-
~ ~ ~
+
Features / Advantages:
Applications:
Package: GUFP
● Low forward voltage drop
● Planar passivated chips
● Easy to mount with one screw
● Space and weight savings
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Isolation Voltage: 2500 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131108c
GUO40-12NO1
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
1300
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
1200
V
IR
reverse current
VF
VR = 1200 V
TVJ = 25°C
40
µA
TVJ = 150°C
1.5
mA
TVJ = 25°C
1.06
V
1.28
V
0.92
V
10 A
IF =
30 A
IF =
10 A
IF =
30 A
TVJ = 150 °C
TC = 90°C
I DAV
bridge output current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
rectangular
R thCH
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1.23
V
T VJ = 175 °C
40
A
TVJ = 175 °C
0.74
V
d=⅓
for power loss calculation only
Ptot
typ.
VR = 1200 V
IF =
forward voltage drop
min.
16.3
mΩ
4.3
K/W
K/W
0.50
TC = 25°C
35
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
370
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
400
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
315
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
340
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
685
A²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
665
A²s
TVJ = 150 °C
495
A²s
480
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
10
pF
20131108c
GUO40-12NO1
Package
Ratings
GUFP
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
max.
70
Unit
A
-40
175
°C
-40
150
°C
Tstg
storage temperature
-40
150
°C
Weight
8.5
MD
mounting torque
FC
mounting force with clip
d Spp/App
d Spb/Apb
VISOL
creepage distance on surface | striking distance through air
t = 1 minute
6.7
10.0
50/60 Hz, RMS; IISOL ≤ 1 mA
1.2
Nm
20
120
N
5.4
mm
8.0
mm
2500
V
2080
V
50
Part Number
GUO40-12NO1
Similar Part
DNA40U2200GU
DMA40U1800GU
GUO40-16NO1
GUO40-08NO1
Equivalent Circuits for Simulation
V0
R0
Marking on Product
GUO40-12NO1
Package
GUFP
GUFP
GUFP
GUFP
* on die level
Delivery Mode
Tube
Quantity
14
K/W
Code No.
514892
Voltage class
2200
1800
1600
800
T VJ = 175 °C
Rectifier
V 0 max
threshold voltage
0.74
V
R 0 max
slope resistance *
13.7
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
g
0.8
thermal resistance junction to ambient
Ordering
Standard
I
terminal to terminal
terminal to backside
t = 1 second
isolation voltage
RthJA
typ.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131108c
GUO40-12NO1
Outlines GUFP
Dim.
Z1
O
Z2
Q
A2
S1
L
S2
5x b2
X2
+
X1
~
Y2
~
~
Y1
_
L1
+1
+2
R
D
ØP
5x b
C
A3
e
4x e
A4
E
A5
F
Ø
/2 R
s1
s2
t1
t2
x1
x2
y1
y2
z1
A6
A
-
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
~ ~ ~
A
A2
A3
A4
A5
A6
b
b2
C
D
E
e
F
L
L1
O
ØP
Q
Millimeter
min
typ.
max
5.40 5.50 5.60
3.90 4.00 4.10
0.95 1.00 1.10
0.95 1.00 1.05
1.60 1.70 1.80
1.25 1.30 1.35
0.95 1.00 1.05
1.95 2.00 2.05
0.45 0.50 0.55
24.80 25.00 25.20
34.70 35.00 35.30
BSC 7.50
2.40 2.50 2.60
20.30 20.40 20.50
3.70 3.75 3.80
17.40 17.50 17.60
4.10 4.20 4.30
9.20 9.30 9.40
1.77
3.45 3.50 3.55
1.45 1.50 1.55
0.95 1.00 1.05
0.95 1.00 1.05
3.20 3.30 3.40
1.90 2.00 2.10
1.60 1.65 1.70
4.65 4.70 4.75
2.80 2.90 3.00
min
0.213
0.154
0.037
0.037
0.063
0.049
0.037
0.077
0.018
0.977
1.367
BSC
0.095
0.800
0.146
0.686
0.162
0.362
0.136
0.057
0.037
0.037
0.126
0.075
0.063
0.183
0.110
Inches
typ.
0.217
0.158
0.039
0.039
0.067
0.051
0.039
0.079
0.020
0.985
1.379
0.296
0.099
0.804
0.148
0.690
0.165
0.366
0.070
0.138
0.059
0.039
0.039
0.130
0.079
0.065
0.185
0.114
max
0.221
0.162
0.043
0.041
0.071
0.053
0.041
0.081
0.022
0.993
1.391
0.102
0.808
0.150
0.693
0.169
0.370
0.140
0.061
0.041
0.041
0.134
0.083
0.067
0.187
0.118
+
Data according to IEC 60747and per semiconductor unless otherwise specified
20131108c
GUO40-12NO1
Rectifier
300
60
800
50 Hz
0.8 x V RRM
VR = 0 V
600
250
40
TVJ = 45°C
IFSM
IF
[A]
I2t
[A]
2
[A s]
200
20
0
0.4
200
TVJ = 25°C
0.8
1.2
150
10-3
1.6
0
10-2
10-1
100
t [s]
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
12
10
2
Fig. 3 I t vs. time per diode
40
RthJA:
DC =
1
0.5
0.4
0.33
0.17
0.08
16
1
t [ms]
VF [V]
20
[W]
TVJ = 150°C
TVJ = 150°C
TVJ =
125°C
150°C
Ptot
TVJ = 45°C
400
DC =
0.6 KW
1
0.8 KW
1
KW
2
KW
4
KW
8
KW
30
0.5
0.4
0.33
IF(AV)M
0.17
20
0.08
[A]
8
10
4
0
0
0
4
8
12
16
0
25
50
IF(AV)M [A]
75
100
125
150
0
175
25
50
75 100 125 150 175
TC [°C]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
5
4
ZthJC 3
Constants for ZthJC calculation:
[K/W]
i
Rth (K/W)
ti (s)
1
0.302
0.002
2
1.252
0.032
3
1.582
0.227
4
1.164
0.820
2
1
0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131108c
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