ResonantSoft-SwitchingSeries ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching IHW25N120E1 Datasheet IndustrialPowerControl IHW25N120E1 ResonantSoft-SwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features: C •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Inductivecooking •Inverterizedmicrowaveovens •Resonantconverters •Softswitchingapplications G C E KeyPerformanceandPackageParameters Type IHW25N120E1 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 1200V 25A 1.5V 150°C H25ME1 PG-TO247-3 2 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 50.0 25.0 A ICpuls 75.0 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤150°C - 75.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 50.0 25.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 75.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±25 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 231.0 92.4 W Operating junction temperature Tvj -40...+150 °C Storage temperature Tstg -55...+150 °C Pulsedcollectorcurrent,tplimitedbyTvjmax 1) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.54 K/W Diode thermal resistance, junction - case Rth(j-c) - - 0.54 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) dV/dt < 1kV/µs 4 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 1200 - - VGE=15.0V,IC=25.0A Tvj=25°C Tvj=100°C Tvj=150°C - 1.50 1.65 1.75 2.00 - - 1.90 2.15 2.35 2.50 - Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=25.0A Tvj=25°C Tvj=100°C Tvj=150°C Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.0 5.8 8.0 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=150°C - 500 100 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=25.0A - 23.0 - S Integrated gate resistor rG V Ω 8.5 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1300 - - 37 - - 31 - - 147.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=25.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VCC=105V,IC=25.0A, VGE=0.0/18.0V, RG(off)=10.2Ω Energy losses include “tail” according Figure B. (Test circuit FigureE,Cr=300nF). - 229 - ns - 1020 - ns dv/dt=83.0V/µs - 0.08 - mJ IGBTCharacteristic,atTvj=25°C Turn-off delay time td(off) Fall time tf Turn-off energy, soft switching Eoff 5 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries Turn-off delay time td(off) Fall time tf Turn-off energy, soft switching Eoff Tvj=25°C, VCC=210V,IC=50.0A, VGE=0.0/18.0V, RG(off)=10.2Ω Energy losses include “tail” according Figure B. (Test circuit FigureE,Cr=300nF). - 249 - ns - 850 - ns dv/dt=166.0V/µs - 0.24 - mJ SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=150°C, VCC=105V,IC=25.0A, VGE=0.0/18.0V, RG(off)=10.2Ω Energy losses include “tail” according Figure B. (Test circuit FigureE,Cr=300nF). - 240 - ns - 1764 - ns IGBTCharacteristic,atTvj=150°C Turn-off delay time td(off) Fall time tf Turn-off energy, soft switching Eoff dv/dt=83.0V/µs - 0.19 - mJ Turn-off delay time td(off) - 253 - ns Fall time tf Tvj=150°C, VCC=210V,IC=50.0A, VGE=0.0/18.0V, RG(off)=10.2Ω Energy losses include “tail” according Figure B. (Test circuit FigureE,Cr=300nF). - 1424 - ns Turn-off energy, soft switching Eoff dv/dt=166.0V/µs - 0.52 - mJ 6 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries 240 70 60 180 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 210 150 120 90 60 40 30 20 10 30 0 50 25 50 75 100 125 0 150 25 50 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤150°C) 125 150 75 VGE=20V VGE=20V 17V 17V 15V 15V 13V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤150°C) 75 11V 50 9V 7V 5V 25 0 75 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 9V 7V 5V 25 0 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] 11V 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25°C) Figure 4. Typicaloutputcharacteristic (Tvj=150°C) 7 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries 75 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] IC,COLLECTORCURRENT[A] Tvj=25°C Tvj=150°C 50 25 0 4 5 6 7 8 9 10 11 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 IC=12.5A IC=25A IC=50A 25 VGE,GATE-EMITTERVOLTAGE[V] 50 75 100 125 150 Tvj,JUNCTIONTEMPERATURE[°C] Figure 5. Typicaltransfercharacteristic (VCE=20V) Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1E+4 1E+4 td(off) tf t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf 1000 100 10 0 10 20 30 40 1000 100 10 50 IC,COLLECTORCURRENT[A] 0 10 20 30 40 50 RG,GATERESISTOR[Ω] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=150°C,VGE=0/18V, RG=10.2Ω,DynamictestcircuitinFigureE) Figure 8. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VGE=0/18V, IC=25A,DynamictestcircuitinFigureE) 8 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries 1E+4 7.0 typ. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf 1000 100 10 25 50 75 100 125 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 150 25 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VGE=0/18V,IC=25A, RG=10.2Ω,DynamictestcircuitinFigureE) 100 125 150 0.30 Eoff, Tvj = 25°C Eoff, Tvj = 100°C Eoff, Tvj = 150°C Eoff 0.5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.8mA) 0.6 0.4 0.3 0.2 0.1 0.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 0.25 0.20 0.15 0.10 0.05 0.00 50 IC,COLLECTORCURRENT[A] 0 10 20 30 40 50 RG,GATERESISTOR[Ω] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,VGE=0/18V,RG=10.2Ω, Dynamic test circuit in Figure E) Figure 12. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VGE=0/18V, IC=25A,DynamictestcircuitinFigureE) 9 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries 0.6 16 VCC=240V VCC=960V 14 0.5 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] Eoff, 12,5A Eoff, 25A Eoff, 50A 0.4 0.3 0.2 12 10 8 6 4 0.1 2 0.0 25 50 75 100 125 0 150 0 Tvj,JUNCTIONTEMPERATURE[°C] 20 40 60 80 100 120 140 160 QGE,GATECHARGE[nC] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VGE=0/18V,IC=25A, RG=10.2Ω,DynamictestcircuitinFigureE) Figure 14. Typicalgatecharge (IC=25A) 1 Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Cies Coes Cres C,CAPACITANCE[pF] 1000 100 10 0 5 10 15 20 25 0.2 0.1 0.05 0.02 single pulse 0.01 0.001 1E-6 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] D=0.5 0.1 1E-5 1E-4 0.001 0.01 0.1 tp,PULSEWIDTH[s] Figure 15. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 16. IGBT/Diodetransientthermalimpedance (D=tp/T) 10 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries 75 3.5 Tvj=25°C Tvj=150°C IF=12.5A IF=25A IF=50A VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 3.0 50 25 2.5 2.0 1.5 1.0 0.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 4.0 VF,FORWARDVOLTAGE[V] 25 50 75 100 125 150 Tvj,JUNCTIONTEMPERATURE[°C] Figure 17. Typicaldiodeforwardcurrentasafunction offorwardvoltage 11 Figure 18. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries Package Drawing PG-TO247-3 12 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries Testing Conditions 90% VGE VGE(t) I,V t VCE V GE 0% IC I (t) I CE 2% I C t t Figure C.Typical switching behavior in resonant applications VCE(t) t tf t td(off) Figure A. VGE(t) 90% VGE Figure D. t IC(t) R CC 1% I C t t2 VCE (t) E = off Figure E. Dynamic test circuit Resonant capacitor, Cr Damping resistor, R VCE x IC x dt t1 t t1 t2 Figure B. 13 Rev.2.1,2016-07-29 IHW25N120E1 ResonantSoft-SwitchingSeries RevisionHistory IHW25N120E1 Revision:2016-07-29,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2016-07-29 Final data sheet Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2016. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. 14 Rev.2.1,2016-07-29