IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C G VCE(ON) typ. = 1.7V @ IC = 75A G E E G G Gate C Collector Features C E IRGP4266D‐EPbF TO‐247AD IRGP4266DPbF TO‐247AC n-channel Applications Industrial Motor Drive UPS Solar Inverters Welding C E Emitter Benefits Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient Base part number Package Type IRGP4266DPbF IRGP4266D-EPbF TO-247AC TO-247AD High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4266DPbF IRGP4266D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 650 140 90 300 300 68 42 ±20 455 230 -40 to +175 V A V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 40 Max. 0.33 1.1 ––– ––– Units °C/W August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 650 — Typ. — 0.65 — 1.7 — 2.2 Gate Threshold Voltage 5.5 — VGE(th) Threshold Voltage Temperature Coeff. — -20 VGE(th)/TJ gfe Forward Transconductance — 47 — 1.0 ICES Collector-to-Emitter Leakage Current — 1.0 — — IGES Gate-to-Emitter Leakage Current — 2.1 Diode Forward Voltage Drop VF — 1.7 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — Units Conditions V VGE = 0V, IC = 100µA V/°C VGE = 0V, IC = 5.0mA (25°C-175°C) 2.1 V IC = 75A, VGE = 15V, TJ = 25°C — IC = 75A, VGE = 15V, TJ = 175°C 7.7 V VCE = VGE, IC = 2.1mA — mV/°C VCE = VGE, IC = 2.1mA (25°C-150°C) — S VCE = 50V, IC = 75A, PW = 20µs 35 µA VGE = 0V, VCE = 650V mA VGE = 0V, VCE = 650V, TJ = 175°C — ±100 nA VGE = ±20V 2.7 V IF = 75A — IF = 75A, TJ = 175°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 5.5 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 770 170 27 — — — µJ ns A Min. — — — — — — — — — — — Typ. 140 50 60 2.5 2.2 4.7 50 70 200 60 3.9 — — — — — — — — — 2.8 6.7 50 70 240 70 4430 310 130 Max Units Conditions 210 IC = 75A 80 nC VGE = 15V VCC = 400V 90 3.4 3.0 mJ IC = 75A, VCC = 400V, VGE=15V 6.4 RG = 10, L = 200µH, TJ = 25°C 70 Energy losses include tail & diode 90 ns reverse recovery 225 80 — — — — — — — — — — mJ ns pF FULL SQUARE IC = 75A, VCC = 400V, VGE=15V RG = 10, L = 200µH, TJ = 175°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 225A VCC = 480V, Vp ≤ 650V VGE = +20V to 0V TJ = 150°C,VCC = 400V, Vp ≤ 650V VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 75A VGE = 15V, Rg = 10 Notes: VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF 140 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 208.3W Load Current ( A ) 120 100 Square Wave: 80 VCC 60 I 40 Diode as specified 20 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 500 160 140 400 120 Ptot (W) IC (A) 100 80 60 40 300 200 100 20 0 0 25 50 75 100 125 150 25 175 50 75 100 125 150 175 TC (°C) TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 1000 100 10 100 IC (A) IC (A) 10µsec 100µsec 10 1msec 1 DC Tc = 25°C Tj = 175°C Single Pulse 1 0.1 1 10 100 1000 10000 10 100 VCE (V) VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3 www.irf.com © 2014 International Rectifier 1000 Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF 300 300 VGE = 18V VGE = 18V VGE = 15V 250 VGE = 15V 250 VGE = 12V 200 VGE = 10V 200 VGE = 8.0V ICE (A) ICE (A) VGE = 12V VGE = 10V 150 VGE = 8.0V 150 100 100 50 50 0 0 0 2 4 6 8 0 10 2 4 6 8 10 V CE (V) V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 300 300 VGE = 18V VGE = 15V 250 250 VGE = 12V VGE = 10V 200 VGE = 8.0V IF (A) ICE (A) 200 150 150 100 100 50 50 -40°C 25°C 175°C 0 0 0 2 4 6 8 0.0 10 1.0 2.0 12 12 10 10 ICE = 38A ICE = 75A 8 ICE = 38A ICE = 75A 8 ICE = 150A V CE (V) V CE (V) 4.0 Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 6 ICE = 150A 6 4 4 2 2 0 0 5 10 15 20 5 10 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 3.0 V F (V) V CE (V) www.irf.com © 2014 International Rectifier 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF 225 12 10 8 135 ICE = 150A ICE (A) V CE (V) 180 ICE = 38A ICE = 75A 6 90 TJ = 25°C TJ = 175°C 4 45 2 0 0 5 10 15 2 20 4 8 10 12 14 16 V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 12 1000 10 tdOFF Swiching Time (ns) 8 Energy (mJ) 6 V GE (V) EON 6 4 EOFF tF 100 tdON 2 tR 0 0 25 50 75 100 125 10 150 0 IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V 50 100 150 IC (A) Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V 10000 11 10 Swiching Time (ns) 9 Energy (mJ) 8 1000 7 6 EON 5 4 tdOFF tF tR 100 EOFF 3 tdON 2 0 25 50 75 100 10 0 20 40 Rg () Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V 5 www.irf.com © 2014 International Rectifier 60 80 100 120 R G () Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF 30 30 RG = 10 25 25 20 IRR (A) IRR (A) RG = 22 RG = 47 15 20 15 10 RG = 100 10 5 20 40 60 80 100 120 140 160 0 20 40 60 80 100 IF (A) RG ( Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 4.4 30 150A 4.0 75A QRR (µC) IRR (A) 25 20 3.6 10 22 47 3.2 100 38A 15 2.8 2.4 10 200 200 250 300 350 400 450 500 550 600 300 400 500 600 700 800 diF /dt (A/µs) diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 700 24 650 400 Tsc 20 RG = 10 330 Isc Time (µs) RG = 22 550 RG = 47 500 450 16 260 12 190 8 120 Current (A) Energy (µJ) 600 RG = 100 400 4 20 40 60 80 100 120 140 160 50 8 10 6 www.irf.com © 2014 International Rectifier 14 16 18 VGE (V) IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C 12 Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF 10000 16 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) Cies 1000 Coes 100 Cres VCES = 400V VCES = 300V 14 12 10 10 8 6 4 2 0 0 100 200 300 400 500 600 0 20 V CE (V) 40 60 80 100 120 140 160 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 75A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 C 4 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Ri (°C/W) i (sec) 0.0125052 0.000036 0.0722526 0.000151 0.1389474 0.005683 0.1056000 0.029339 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.1 J 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 Ci= iRi Ci= iRi 0.001 1E-005 0.0001 0.001 4 i (sec) 0.0131492 0.000022 0.3667154 0.000779 0.3959357 0.009640 0.3228848 0.079874 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 C Ri (°C/W) 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC DUT G force 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF 600 120 tf 120 600 tr 500 100 500 400 80 400 60 300 TEST CURRENT 100 80 40 60 90% ICE 40 200 ICE (A) 200 VCE (V) 300 ICE (A) VCE (V) 90% ICE 10% VCE 100 20 10% ICE 0 100 0 -0.5 0 0.5 0 0 1 -0.5 0 0.5 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 600 600 100 QRR 500 tRR 500 VCE 400 400 40 300 300 Vce (V) 60 20 0 -20 Peak IRR 200 100 100 0 0 -40 -0.5 ICE 200 0.0 0.5 1.0 -100 -100 -5 0 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 www.irf.com © 2014 International Rectifier Ice (A) 80 IF (A) -20 -100 -20 time(µs) 9 20 10% VCE Eon Loss Eoff Loss -100 10% ICE 5 10 time (µs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 21, 2014 IRGP4266DPbF/IRGP4266D-EPbF Qualification Information† Industrial Qualification Level TO-247AC Moisture Sensitivity Level (per JEDEC JESD47F)†† N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 8/21/2014 Comments Updated Temperature Coeff. of Breakdown Voltage from “0.11V/C” to “0.65 V/C” on page 2 . Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3. Updated package outline on page11. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 21, 2014