LRC L2N7002M3T5G Small signal mosfet Datasheet

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
L2N7002M3T5G
S-L2N7002M3T5G
N–Channel SOT–723
3
• Pb−Free Package is Available.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
2
1
ORDERING INFORMATION
Device
Marking
L2N7002M3T5G
S-L2N7002M3T5G
72
SOT-723
Shipping
8000 Tape & Reel
N - Channel
MAXIMUM RATINGS
Rating
3
Symbol
Value
Unit
Drain–Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
Drain Current
– Continuous TC = 25°C (Note 1.)
–
– Continuous
Pulse t < 10us
ID
±115
mAdc
IDM
±800
Gate–Source Voltage
– Continuous
VGS
±20
1
2
Vdc
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
Characteristic
Total Device Dissipation FR–5 Board
(Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
150
1.2
mW
mW/°C
RθJA
833
°C/W
TJ, Tstg
–55 to
+150
72
1
Gate
72
M
M
THERMAL CHARACTERISTICS
2
Source
= Device Code
= Month Code
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. FR–5 = 1.0 x 0.75 x 0.062 in.
3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
L2N7002M3T5G , S-L2N7002M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
–
–
Vdc
IDSS
–
–
–
–
1.0
500
µAdc
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
–
–
100
nAdc
Gate–Body Leakage Current, Reverse
(VGS = – 20 Vdc)
IGSSR
–
–
–100
nAdc
VGS(th)
1.0
1.8
2.2
Vdc
ID(on)
500
–
–
mA
–
–
–
–
3.75
0.375
–
–
4
–
–
4
gFS
80
–
–
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
–
17
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
–
10
25
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
–
2.5
5.0
pF
td(on)
–
7
20
ns
td(off)
–
11
40
ns
VSD
–
–
–1.5
Vdc
IS
–
–
–115
mAdc
ISM
–
–
–800
mAdc
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
rDS(on)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
Vdc
Ohms
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V DD = 25 Vdc , ID ^ 500 mAdc,
RG = 25 Ω, RL = 50 Ω, Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, V GS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
L2N7002M3T5G , S-L2N7002M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.0
VDS = 10 V
TA = 25°C
1.6
1.4
9V
1.2
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
0
0.8
VGS = 10 V
ID, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
1.8
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
9.0
125°C
0.6
0.4
0.2
0
10
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-ā60
-ā20
+ā20
+ā60
T, TEMPERATURE (°C)
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 2. Transfer Characteristics
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
Figure 1. Ohmic Region
2.0
25°C
-ā55°C
+ā100
Figure 3. Temperature versus Static
Drain–Source On–Resistance
+ā140
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-ā60
-ā20
+ā20
+ā60
T, TEMPERATURE (°C)
+ā100
+ā140
Figure 4. Temperature versus Gate
Threshold Voltage
Rev .O 3/4
LESHAN RADIO COMPANY, LTD.
L2N7002M3T5G , S-L2N7002M3T5G
SOT−723
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
e
HE
L
2
b 2X
0.08 (0.0032) X Y
DIM
A
b
b1
C
D
E
e
HE
L
C
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.20
0.27
0.25
0.3
0.35
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0079 0.0106
0.010 0.012 0.014
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm Ǔ
ǒinches
Rev .O 4/4
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