Foshan BRD4N60 N-channel mosfet in a to-252 plastic package Datasheet

BRD4N60
Rev.E May.-2016
描述
/
DATA SHEET
Descriptions
TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.
特征
/ Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途
/
Applications
该器件适用于适配器和充电器的功率开关电路
These devices are well suited for power switch circuit of adaptor and charger.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
4
1
2
3
PIN1:G
放大及印章代码
PIN 2:D
PIN 3:S
PIN 4:D
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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BRD4N60
Rev.E May.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
VDSS
600
V
Drain Current
ID(Tc=25℃)
4.0
A
Drain Current
ID(Tc=100℃)
3.2
A
IDM
16
A
Gate-Source Voltage
VGSS
±30
V
Single Pulsed Avalanche Energy
EAS
200
mJ
Repetitive Avalanche Energy
EAR
30
mJ
Avalanche Current
IAR
2.5
A
Power Dissipation
PD(Tc=25℃)
75
W
TJ,TSTG
-55 to 150
℃
Drain-Source Voltage
Drain Current - Pulsed
Operating and Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
测试条件
Test Conditions
VGS=0V
ID=250μA
VDS=600V
VGS=0V
VDS=480V
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
600
V
1
μA
TC=125℃
100
μA
VGS=±30V
VDS=0V
±10
μA
4.0
V
2.5
Ω
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
VGS(th)
VDS=VGS
ID=250μA
Static Drain-Source
On-Resistance
RDS(on)
VGS=10V
ID=2.0A
2.0
Forward Transconductance
gFS
VDS=15V
ID=2.0A
3.5
Drain-Source Diode Forward
Voltage
VSD
VGS=0V
IS=4.0A
Input Capacitance
Ciss
VDS=25V
f=1.0MHz
VGS=0V
IGSS
2.0
S
1.5
V
554
pF
50
pF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
2.2
pF
Turn-On Delay Time
td(on)
14
ns
Turn-On Rise Time
tr
13
ns
Turn-Off Delay Time
td(off)
32
ns
8
ns
Turn-Off Fall Time
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tf
VDD=300V
RG=25Ω
ID=4.0A
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BRD4N
N60
Rev.E May.-2016
电参数曲线
线图
DA
ATA SHEET
/ Elec
ctrical Charracteristic C
Curve
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BRD4N60
Rev.E May.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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BRD4N60
Rev.E May.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
4N60
****
说明:
BR:
为公司代码
4N60: 
为型号代码
****:

为生产批号代码,随生产批号变化。

Company Code
Note:
BR:  
4N60:
****:
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Product Type.

Lot No. Code, code change with Lot No.
5/6
BRD4N
N60
Rev.E May.-2016
DA
ATA SHEET
回流焊温度
度曲线图(无铅
铅)
/
Tem
mperature Profile
P
for IR
I Reflow Soldering(
S
(Pb-Free)
说明:
Note:
N
温度 25~150
0℃,时间 60
0~90sec;
1、预热温
1.Preheating:25~150℃, Time:60~90
0sec.
2、峰值温
温度 245±5℃
℃,时间持续
续为 5±0.5se
ec;
2.Peak
2
Temp
p.:245±5℃, Duration:5±
±0.5sec.
3、焊接制
制程冷却速度
度为 2~10℃//sec.
3.
3 Cooling Sp
peed: 2~10℃
℃/sec.
耐焊接热试
试验条件
/
Resistance to Solde
ering Heat Test
T
Conditions
±1 sec.
时间:10±
0±5℃
温度:260
包装规格
Package Typ
pe
封装形式
TO-252
套管包装
Package Typ
pe
封装形式
使用说明
Time:10±1 se
ec
/ Packagiing SPEC.
卷盘包装
TO-251/252
Temp.:260±5
T
5℃
/ REEL
Units 包装数量
量
Dimension
包装尺寸
3
(un
nit:mm )
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inneer Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Reel
Innner Box 盒
Outer Box 箱
2,500
2
5,000
5
25,000
1
13〞×16
3600×360×50
385×257×392
3
Units/Tube
只/套管
Tubes/Inner Box
T
套管/盒
Units/Inner Box
只/盒
Inneer Boxes/Outer Box
盒/箱
Units/Outer
U
Box
只/箱
T
Tube
套管
Innner Box 盒
Outer Box 箱
75
48
3,600
5
18,000
526×20.5×5.25
5555×164×50
575×290×180
5
/ TUBE
U
Units
包装数量
Dimension
包装尺寸
3
(unit:mm )
/ Notices
s
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