Renesas H7P1002DL-E Silicon p channel mos fet high speed power switching Datasheet

H7P1002DL, H7P1002DS
Silicon P Channel MOS FET
High Speed Power Switching
REJ03G1601-0100
Rev.1.00
Nov 16, 2007
Features
• Low on-resistance
RDS(on) = 85 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
4
D
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
G
H7P0601DS
1
2
S
3
H7P0601DL
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 1 of 8
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
Rating
–100
±20
–15
–60
–15
Unit
V
V
A
A
A
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
–12
14.4
30
150
–55 to +150
A
mJ
W
°C
°C
H7P1002DL, H7P1002DS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
Turn-off delay time
Fall time
Body-drain diode forward voltage
td(off)
tf
VDF
Body-drain diode reverse recovery
time
Note:
trr
4. Pulse test
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 2 of 8
Min
–100
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
±20
—
—
–1.0
—
—
7.2
—
—
—
—
—
—
—
—
—
—
—
—
85
105
12
2600
190
120
45
6.5
9.0
23
45
—
±10
–10
–2.5
105
150
—
—
—
—
—
—
—
—
—
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –100 V, VGS = 0
ID = –1 mA, VDS = –10 V Note4
ID = –7.5 A, VGS = –10 V Note4
ID = –7.5 A, VGS = –4.5 V Note4
ID = –7.5 A, VDS = –10 V Note4
VDS = –10 V
VGS = 0
f = 1 MHz
—
—
—
—
80
13
–0.91
50
—
—
—
—
ns
ns
V
ns
VDD = –50 V
VGS = –10 V
ID = –15 A
VGS = –10 V, ID = –7.5 A
RL = 4.0 Ω
Rg = 4.7 Ω
IF = –15 A, VGS = 0
IF = –15 A, VGS = 0
diF/dt = 100 A/µs
H7P1002DL, H7P1002DS
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
ID (A)
Drain Current
20
10
DC
0
25
50
75
100
Case Temperature
–20
µs
–1
–0.3
–0.1
125
Ta = 25°C
–0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –300 –1000
150
Tc (°C)
Drain to Source Voltage
–10 V
–8 V
–20
Pulse Test
VDS = –10 V
Pulse Test
–3.5 V
ID (A)
–15
–5 V
–4 V
–3 V
–10
–5
–15
–10
–5
Tc = 75°C
25°C
VGS = –2 V
0
0
–2
–4
–6
Drain to Source Voltage
–8
–25°C
0
–10
VDS (V)
Pulse Test
ID = –10 A
–0.8
–0.6
–5 A
–0.4
–2 A
–0.2
0
0
–4
–8
–12
Gate to Source Voltage
–16
–20
VGS (V)
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 3 of 8
–1
–2
–3
–4
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (mΩ)
–1.2
0
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
VDS (V)
Typical Transfer Characteristics
Drain Current
ID (A)
10
O
m
pe
s(
ra
1
tio
sh
n
ot
(T
)
c=
25
°C
)
Operation in
this area is
limited by RDS (on)
–3
Typical Output Characteristics
Drain to Source Saturation Voltage
VDS (on) (V)
0
–0.03
0
Drain Current
=
s
30
–10
10
µs
40
PW
m
Channel Dissipation
10
–30
1
Pch (W)
50
1000
Pulse Test
500
200
VGS = –4 V
100
–10 V
50
20
10
–1
–2
–5
–10
Drain Current
–20
–50 –100
ID (A)
H7P1002DL, H7P1002DS
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
–2 A, –5 A
0.20
ID = –10 A
0.15
VGS = –4.5 V
0.10
–2 A, –5 A
–10 A
–10 V
0.05
0
–50
0
50
100
Case Temperature
150
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1
Tc (°C)
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
30
10
3
–1
–3
–10
Reverse Drain Current
–30
300
Crss
IDR (A)
0
–4
–8
VDD = –100 V
–50 V
–25 V
–12
–160
16
32
Gate Charge
48
64
Qg (nc)
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 4 of 8
–5
–10
–15
–20
–25
–30
–16
80
1000
Switching Time t (ns)
ID = –15 A
VGS
0
Switching Characteristics
VDS
–80
VGS = 0
f = 1 MHz
Drain to Source Voltage VDS (V)
VGS (V)
VDD = –25 V
–50 V
–100 V
Coss
100
10
–100
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
0
0
–100
1000
Dynamic Input Characteristics
–120
–30
Ciss
3000
30
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
–40
–10
10000
300
–0.3
–3
Typical Capacitance vs.
Drain to Source Voltage
Pulse Test
1
–0.1
–1
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
1000
–0.3
300
td(off)
tr
100
td(on)
30
tf
10
3
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
RG = 4.7 Ω
1
–0.1 –0.3
–1
–3
Drain Current
–10
–30
ID (A)
–100
H7P1002DL, H7P1002DS
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IDR (A)
–20
–15
–10 V
–10
–5 V
VGS = 0, 5 V
–5
Pulse Test
0
0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage
–2.0
20
IAP = –12 A
VDD = –50 V
duty < 0.1 %
Rg ≥ 50 Ω
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
0.05
2
0.0
0.1
0.03
1s
0.01
10 µ
ho
1
0.0
e
uls
tp
D=
PDM
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
–15 V
50 Ω
0
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 5 of 8
VDD
H7P1002DL, H7P1002DS
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
Rg
90%
RL
90%
90%
Vin
–10 V
VDD
= –30 V
Vout
td(on)
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 6 of 8
10%
tr
10%
td(off)
tf
H7P1002DL, H7P1002DS
Package Dimensions
• H7P1002DL
JEITA Package Code

RENESAS Code
PRSS0004ZD-B
Previous Code
MASS[Typ.]
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
1.7 ± 0.5
Package Name
DPAK(L)-(2)
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
Unit: mm
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
• H7P1002DS
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
6.5 ± 0.5
5.4 ± 0.5
(0.1)
MASS[Typ.]
0.28g
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 7 of 8
Unit: mm
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
H7P1002DL, H7P1002DS
Ordering Information
Part No.
H7P1002DL-E
H7P1002DSTL-E
Quantity
3200 pcs
3000 pcs
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 8 of 8
Shipping Container
Hold Box, Radial Taping
Taping
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