ON NTR5105PT1G Power mosfet single nâ channel Datasheet

NTR5105P
Power MOSFET
−60 V, −211 mA, Single P−Channel
SOT−23 Package
Features
• Trench Technology
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
5 W @ −10 V
Applications
• Small Signal Load Switch
• Analog Switch
−60 V
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Power Dissipation
(Note 1)
P−Channel
Symbol
Value
Unit
VDSS
−60
V
VGS
±20
V
ID
−196
mA
Steady
State
TA = 25°C
TA = 85°C
−141
t≤5s
TA = 25°C
−211
TA = 85°C
−152
Steady
State
TA = 25°C
PD
t≤5s
Pulsed Drain Current
−211 mA
6 W @ −4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Continuous Drain
Current (Note 1)
ID MAX
tp = 10 ms
mW
347
403
3
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
1
−784
A
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
−347
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
G
S
IDM
Operating Junction and Storage Temperature
D
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
360
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
RqJA
310
°C/W
1. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu area − 1.127 in.
sq. [2 oz.] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu pad.
2
T05 MG
G
SOT−23
CASE 318
STYLE 21
T05
M
G
1
Gate
2
Source
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTR5105PT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 0
1
Publication Order Number:
NTR5105P/D
NTR5105P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Reference to 25°C, ID = −250 mA
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
VGS = 0 V,
VDS = −60 V
V
6.5
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−10
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = −250 mA
mA
"100
nA
−3.0
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
−1.0
4.2
mV/°C
W
VGS = −10 V, ID = −100 mA
1.6
5.0
VGS = −4.5 V, ID = −100 mA
2.2
6.0
VDS = −5.0 V, ID = −100 mA
227
mS
30.3
pF
CHARGES, CAPACITANCES & GATE RESISTANCE
Ciss
Input Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = −25 V
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
3.2
Total Gate Charge
QG(TOT)
1.0
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = −5 V, VDS = −25 V,
ID = −100 mA
4.7
nC
0.2
0.4
0.3
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
5.8
VGS = −5 V, VDD = −48 V,
ID = −100 mA, RG = 1 W
tf
4.0
8.8
12.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −100 mA
TJ = 25°C
0.78
TJ = 125°C
0.59
1.0
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTR5105P
TYPICAL CHARACTERISTICS
1.0
−ID, DRAIN CURRENT (A)
TJ = 25°C
0.8
0.7
−4.0 V
0.6
0.5
−3.5 V
0.4
0.3
−3.0 V
0.2
0.1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 125°C
0.8
TJ = 25°C
0.7
0.6
0.5
0.4
VDS = −10 V
0.3
0.2
−2.5 V
0.1
0
1
2
3
4
5
1
3
4
5
6
7
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
7
TJ = 25°C
6
ID = −100 mA
5
4
3
2
1
0
2
2
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3
4
5
6
7
8
9
10
8
5
TJ = 25°C
4
VGS = −4.5 V
3
2
VGS = −10 V
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1000
VGS = −10 V
ID = −100 mA
TJ = 150°C
−IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
TJ = −55°C
0.9
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
1.0
−4.5 V
VGS = −5 V
to −10 V
0.9
1.5
VGS = −4.5 V
1.0
100
TJ = 125°C
10
1
TJ = 85°C
0.5
−50
0.1
−25
0
25
50
75
100
125
150
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTR5105P
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
40
C, CAPACITANCE (pF)
CISS
30
20
VGS = 0 V
TJ = 25°C
f = 1 MHz
COSS
10
CRSS
0
0
10
20
30
40
50
60
QT
9
8
7
6
5
4
QGS
3
QGD
VDS = −25 V
ID = −100 mA
TJ = 25°C
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 1.8
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
10
VGS ≤ −30 V
Single Pulse
TC = 25°C
VGS = 0 V
−ID, DRAIN CURRENT (A)
−IS, SOURCE CURRENT (A)
10
1
TJ = 85°C
TJ = 25°C
0.1
1
100 ms
1 ms
0.1
10 ms
0.01
RDS(on) Limit
Thermal Limit
Package Limit
dc
0.001
0.6
0.8
0.7
0.9
1.0
1.1
1.2
0.1
1
10
100
1000
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
1000
RqJA(t) (°C/W)
50% Duty Cycle
100
20%
10%
5%
10
2%
1%
1
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 11. Thermal Response
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4
1
10
100
1000
NTR5105P
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR5105P/D
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