HV10G16 10mA 16kV 100nS-- High Voltage Diodes HVGT High voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability SHAPE DISPLAY: epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. High frequency . 4. Conform to RoHS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. SIZE: (Unit:mm) HVGT NAME: DO-312 APPLICATIONS: 1. High voltage multiplier circuit 2. Electrostatic generator circuit . 3. General purpose high voltage rectifier. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.32 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units VRRM Ta=25°C; 16 kV IF Ta=25°C;Resistive Load 10 mA IFSM Ta=25°C; 1/2 Sine(60Hz) 1.0 A Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature TJ -40~+125 °C Allowable Operation Case Temperature Tc 125 °C TSTG -40~+125 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance Ta=25°C (Unless otherwise specified) Symbols Condition Data value Units VF at 25°C; at IF(AV) 43 V IR1 at 25°C; at VRRM 2.0 uA IR2 at 100°C; atVRRM 5.0 uA TRR at 25°C; IF=0.5IR; IR =IFAVM; IRR =0.25IR 100 nS CJ at 25°C; VR=0V; f=1MHz 1.0 pF GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2016 1 / 2 HV10G16 10mA 16kV 100nS-- High Voltage Diodes Fig1 Fig2 Forward Characteristics Reverse Characteristics Fig3 Fig4 VR‐IF(AV) Curve IF(AV)‐fH Curve Type Marking Code Cathode Mark HV10G16 GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2016 2 / 2