MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-Transistor,80V BSC061N08NS5 DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTM5Power-Transistor,80V BSC061N08NS5 1Description SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 80 V S2 7D RDS(on),max 6.1 mΩ S3 6D ID 82 A G4 5D Qoss 33 nC QG(0V..10V) 27 nC Type/OrderingCode Package BSC061N08NS5 PG-TDSON-8 1) Marking 061N08NS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 82 52 19 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W1) - 328 A TC=25°C - - 50 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 74 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current2) 3) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 1.0 1.7 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=41µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5.2 7.4 6.1 9.0 mΩ VGS=10V,ID=41A VGS=6V,ID=20.5A Gate resistance1) RG - 1.0 1.5 Ω - Transconductance gfs 32 65 - S |VDS|>2|ID|RDS(on)max,ID=41A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 1900 2500 pF VGS=0V,VDS=40V,f=1MHz Output capacitance Coss - 310 400 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance1) Crss - 16 28 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 11 - ns VDD=40V,VGS=10V,ID=41A, RG,ext=3Ω Rise time tr - 6 - ns VDD=40V,VGS=10V,ID=41A, RG,ext=3Ω Turn-off delay time td(off) - 19 - ns VDD=40V,VGS=10V,ID=41A, RG,ext=3Ω Fall time tf - 5 - ns VDD=40V,VGS=10V,ID=41A, RG,ext=3Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Gate charge at threshold Values Unit Note/TestCondition - nC VDD=40V,ID=41A,VGS=0to10V 5 - nC VDD=40V,ID=41A,VGS=0to10V - 6 9 nC VDD=40V,ID=41A,VGS=0to10V Qsw - 10 - nC VDD=40V,ID=41A,VGS=0to10V Gate charge total Qg - 27 33 nC VDD=40V,ID=41A,VGS=0to10V Gate plateau voltage Vplateau - 4.9 - V VDD=40V,ID=41A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 23 - nC VDS=0.1V,VGS=0to10V Qoss - 33 44 nC VDD=40V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 9 Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 2) Reverse recovery time 2) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 67 A TC=25°C IS,pulse - - 328 A TC=25°C VSD - 0.89 1.1 V VGS=0V,IF=41A,Tj=25°C trr - 37 74 ns VR=40V,IF=41A,diF/dt=100A/µs Qrr - 37 74 nC VR=40V,IF=41A,diF/dt=100A/µs See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 6 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 100 80 60 ID[A] Ptot[W] 60 40 40 20 20 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 100 10 µs 0.5 0.2 ZthJC[K/W] ID[A] 100 µs 1 10 1 ms 10 ms 0.1 10 -1 0.05 0.02 0.01 single pulse DC 100 10-1 10-1 10-2 100 101 102 10-3 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 360 12 320 6V 5.5 V 7V 10 10 V 280 9 7V 8 RDS(on)[mΩ] 240 ID[A] 5V 11 200 160 120 6V 80 5.5 V 40 5V 7 10 V 6 5 4 3 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 3.5 0 4.0 0 50 100 150 VDS[V] 200 250 300 350 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 240 160 200 120 gfs[S] ID[A] 160 120 80 80 40 40 150 °C 0 0 2 25 °C 4 6 8 0 0 20 VGS[V] 60 80 100 120 140 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 8 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 11 4 10 410 µA 9 3 8 41 µA max 6 VGS(th)[V] RDS(on)[mΩ] 7 typ 5 2 4 3 1 2 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=41A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25 °C, max 150 °C, max Ciss IF[A] 102 C[pF] 103 Coss 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 9 25 °C 40 V 8 7 6 VGS[V] IAV[A] 100 °C 101 125 °C 16 V 64 V 5 4 3 2 1 100 100 101 102 103 0 0 tAV[µs] 10 20 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=41Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 86 84 VBR(DSS)[V] 82 80 78 76 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 6PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 11 Rev.2.0,2014-12-27 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 RevisionHistory BSC061N08NS5 Revision:2014-12-27,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-27 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2014-12-27