ON NTMFS4H02NT3G Power mosfet single nâ channel Datasheet

NTMFS4H02N
Power MOSFET
25 V, 193 A, Single N−Channel, SO−8FL
Features
•
•
•
•
Optimized Design to Minimize Conduction and Switching Losses
Optimized Package to Minimize Parasitic Inductances
Optimized material for improved thermal performance
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•
•
•
•
High Performance DC-DC Converters
System Voltage Rails
Netcom, Telecom
Servers & Point of Load
Value
Units
Drain-to-Source Voltage
VDSS
25
V
Gate-to-Source Voltage
VGS
±20
V
Continuous Drain Current RqJA
(TA = 25°C, Note 1)
ID
37
A
Power Dissipation RqJA
(TA = 25°C, Note 1)
PD
3.13
W
Continuous Drain Current RqJC
(TC = 25°C, Note 1)
ID
193
A
Power Dissipation RqJC
(TC = 25°C, Note 1)
PD
83
W
Pulsed Drain Current (tp = 10 ms)
IDM
412
A
Single Pulse Drain-to-Source Avalanche
Energy (Note 1) (IL = 47 Apk, L = 0.3 mH)
EAS
331
mJ
Drain to Source dV/dt
dV/dt
7
V/ns
TJ(max)
150
°C
TSTG
−55 to
150
°C
Storage Temperature Range
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
MAX RDS(on)
TYP QGTOT
4.5 V
2.2 mW
18 nC
10 V
1.4 mW
38.5 nC
SO8−FL (5 x 6 mm)
Symbol
Maximum Junction Temperature
VGS
PIN CONNECTIONS
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
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(Top View)
TSLD
(Bottom View)
N−CHANNEL MOSFET
D (5−8)
G (4)
S (1,2,3)
ORDERING INFORMATION
°C
260
See detailed ordering and shipping information on page 7 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 31 A, EAS = 144 mJ.
THERMALCHARACTERISTICS
Parameter
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
Symbol
Max
RqJA
RqJC
40.0
1.5
Units
°C/W
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 3
1
Publication Order Number:
NTMFS4H02N/D
NTMFS4H02N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
18.5
VGS = 0 V,
VDS = 20 V
mV/°C
TJ = 25°C
1
TJ = 125°C
20
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.1
3.7
VGS = 10 V
ID = 30 A
1.1
1.4
VGS = 4.5 V
ID = 30 A
1.7
2.2
gFS
VDS = 12 V, ID = 15 A
V
mV/°C
84
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2651
VGS = 0 V, f = 1 MHz, VDS = 12 V
103
Total Gate Charge
QG(TOT)
18
Threshold Gate Charge
QG(TH)
2.7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
Gate Resistance
pF
1814
VGS = 4.5 V, VDS = 12 V; ID = 30 A
nC
7.2
4.2
QG(TOT)
VGS = 10 V, VDS = 12 V; ID = 30 A
38.5
RG
TA = 25°C
1.0
nC
2
W
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
13.1
VGS = 4.5 V, VDD = 12 V, ID = 15 A,
RG = 3.0 W
tf
20
ns
22.2
9.1
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
9.5
VGS = 10 V, VDD = 12 V,
ID = 15 A, RG = 3.0 W
tf
18.5
ns
30.3
5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.75
TJ = 125°C
0.56
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
46.3
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
23.9
ns
22.4
51
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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NTMFS4H02N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
PACKAGE PARASITIC VALUES
Source Inductance
LS
Drain Inductance
LD
Gate Inductance
LG
TA = 25°C
0.57
nH
0.13
nH
1.37
nH
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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NTMFS4H02N
TYPICAL CHARACTERISTICS
VGS = 10 V to 3.7 V
140
VGS = 3.5 V
TJ = 25°C
120
VGS = 3.3 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
140
100
VGS = 3.1 V
80
VGS = 2.9 V
60
40
VGS = 2.7 V
20
100
80
TJ = 125°C
60
40
TJ = 25°C
20
VGS = 2.5 V
TJ = −55°C
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0.0030
4.0
0.0020
0.0019
VGS = 30 V
T = 25°C
0.0018
0.0025
VGS = 4.5 V
0.0017
0.0016
0.0020
0.0015
0.0014
0.0013
0.0015
0.0012
VGS = 10 V
0.0011
0.0010
3
4
5
6
7
8
9
0.0010
10
1.5
40
50
60
70
80
90
100 110 120
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1E−04
ID = 30 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
1E−05
1.4
TJ = 125°C
1E−06
1.3
1.2
TJ = 85°C
1E−07
1.1
1.0
TJ = 25°C
1E−08
0.9
0.8
0.7
−50
30
IDSS, LEAKAGE (A)
1.6
20
VGS (V)
1.7
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VDS = 5 V
120
1E−09
−25
0
25
50
75
100
125
150
5
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
25
NTMFS4H02N
4800
4400
4000
3600
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL CHARACTERISTICS
TJ = 25°C
VGS = 0 V
3200
Ciss
2800
2400
2000
1600
Coss
1200
800
400
0
Crss
0
5
10
15
20
6
Qgs
4
Qgd
TJ = 25°C
VGS = 10 V
VDD = 12.0 V
ID = 30 A
2
0
0
4
8
12
16
20
24
32
28
36
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
40
30
VDD = 12 V
ID = 15 A
VGS = 10 V
VGS = 0 V
td(off)
IS, SOURCE CURRENT (A)
t, TIME (ns)
QT
8
25
1000
tf
100
tr
td(on)
10
25
20
TJ = 125°C
TJ = 25°C
15
10
5
0
1
1
10
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100 ms
100
1 ms
10
10 ms
0 V < VGS < 10 V
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.01
0.01
0.1
1
dc
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE (W)
1000
ID, DRAIN CURRENT (A)
10
100
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
ID = 31 A
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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150
NTMFS4H02N
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
R(t) (°C/W)
10
10%
5%
2%
1
1%
PCB Cu Area 650 mm2
PCB Cu thk 1 oz
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
1E−05
1E−04
1E−03
PULSE TIME (sec)
Figure 13. Thermal Characteristics
1E+03
220
200
ID, DRAIN CURRENT (A)
180
160
1E+02
GFS (S)
140
120
100
80
1E+01
60
40
20
0
1E+00
0
20
40
60
80
100
120
140
1E−07
1E−06
ID (A)
PULSE WIDTH (sec)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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NTMFS4H02N
ORDERING INFORMATION
Package
Shipping†
NTMFS4H02NT1G
SO8−FL
(Pb-Free)
1500 / Tape & Reel
NTMFS4H02NT3G
SO8−FL
(Pb-Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING
DIAGRAM
D
S
S
S
G
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
D
4H02N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
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NTMFS4H02N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
DETAIL A
SOLDERING FOOTPRINT*
8X
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
e/2
L
1
1.000
4
K
0.965
1.330
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.905
2X
0.495
4.530
3.200
G
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
0.475
D2
BOTTOM VIEW
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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NTMFS4H02N/D
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