TI1 LP8555 Lp8555 high-efficiency led backlight driver for tablet pc Datasheet

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LP8555
SNVS857 – FEBRUARY 2014
LP8555 High-Efficiency LED Backlight Driver for Tablet PCs
1 Features
3 Description
•
•
•
The LP8555 is a high efficiency LED driver with
integrated dual DC-DC boost converters. It has 12
high-precision current sinks that can be controlled by
a PWM input signal, an I2C master, or both.
1
•
•
•
•
•
•
•
•
•
Dual High-Efficiency DC/DC Boost Converters
2.7-V to 20-V VDD Range
12 50-mA High-Precision LED Current Sinks With
12-Bit Brightness Control
Adaptive LED Current Sink Headroom Controls for
Maximum System Efficiency
LED String Count Auto-Detection
Phase-Shifted PWM Mode for Reduced Audible
Noise
PWM Input Duty-Cycle and/or I2C-Register
Brightness Control
Hybrid PWM and Current Dimming for Higher LED
Drive Optical Efficiency
Flexible CABC Support
EPROM, I2C-Register, or External Resistors for
Configuration
Improved Boost EMI Performance with Slew-Rate
Control, Spread Spectrum, and Phase-Shifted
Switching
Extensive Fault Detection Schemes
2 Applications
•
Dual-boost configuration of LP8555 shares the load
to two inductors and allows thinner overall solution
size and better efficiency compared to single-boost
solutions. 12 LED strings allows driving high number
of LEDs with optimal efficiency since boost
conversion ratio can be kept low.
The boost converter has adaptive output voltage
control based on the LED current sink headroom
voltages. This feature minimizes the power
consumption by adjusting the voltage to lowest
sufficient level in all conditions.
The LED string auto-detect function enables use of
the same device in systems with 2 to 12 LED strings
for the maximum design flexibility. Proprietary Hybrid
PWM and Current dimming mode enables additional
system power savings. Phase-shift PWM allows
reduced audible noise and smaller boost output
capacitors. Flexible CABC support combines
brightness level selections based on the PWM input
and I2C commands.
Device Information
Tablet LCD Display LED Backlight
ORDER NUMBER
LP8555YFQR
PACKAGE
BODY SIZE
DSBGA (36)
2,478mm x 2,478mm
4 Simplified Schematic
L1
VBATT
2.7V ± 20V
CVDD
D1
7 - 28V
1.3 ”9OUT / VIN ”10
LED Drive Efficiency
VOUT_A
CIN_A
COUT_A
92
Inductor: IHLP2525CZER6R8M01
SW_A
FB_A
VDD
LCD Display
VLDO
90
LEDA1
LED BANK A
LEDA2
LEDA3
LP8555
EN/VDDIO
EN
RPULL-UP
SDA
LEDA4
LEDA5
LEDA6
FSET/SDA
ISET/SCL
SCL
PWM/INT
INT
LEDB1
VDDIO
LED BANK B
LEDB2
RPULL-UP
LEDB3
LEDB4
LEDB5
LEDB6
LED Drive Efficiency (%)
CVLDO
88
86
84
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
82
80
0
20
40
60
Brightness (%)
80
100
C002
FB_B
SW_B
GNDs
VOUT_B
VBATT
2.7V ± 20V
CIN_B
L2
D2
COUT_B
7 - 28V
1.3 ”9OUT / VIN ”10
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LP8555
SNVS857 – FEBRUARY 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Terminal Configuration and Functions................
Specifications.........................................................
1
1
1
1
2
3
4
7.1
7.2
7.3
7.4
7.5
7.6
4
4
5
5
5
Absolute Maximum Ratings ......................................
Handling Ratings.......................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics (3) .......................................
I2C Serial Bus Timing Parameters (FSET/SDA,
ISET/SCL) ..................................................................
7.7 Typical Characteristics .............................................
8
8.2
8.3
8.4
8.5
9
Functional Block Diagram .......................................
Features Description ...............................................
Device Functional Modes........................................
Register Maps .........................................................
11
12
29
30
Application and Implementation ........................ 46
9.1 Application Information............................................ 46
9.2 Typical Applications ................................................ 46
10 Power Supply Recommendations ..................... 54
11 Layout................................................................... 55
11.1 Layout Guidelines ................................................. 55
11.2 Layout Example .................................................... 56
12 Device and Documentation Support ................. 57
12.1 Trademarks ........................................................... 57
12.2 Electrostatic Discharge Caution ............................ 57
12.3 Glossary ................................................................ 57
7
8
13 Mechanical, Packaging, and Orderable
Information ........................................................... 58
Detailed Description ............................................ 11
8.1 Overview ................................................................. 11
5 Revision History
2
DATE
REVISION
NOTES
February 21, 2014
*
Initial Release
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SNVS857 – FEBRUARY 2014
6 Terminal Configuration and Functions
YFQ (DSBGA)
36 Bumps
TOP
BOTTOM
6
LEDB1
LEDB2
FB_B
SW_B
SW_B
SW_B
SW_B
SW_B
SW_B
FB_B
LEDB2
LEDB1
6
5
LEDB3
LEDB4
EN
VDDIO
GND
SW_B
GND
SW_B
GND
SW_B
GND
SW_B
GND
SW_B
GND
SW_B
EN
VDDIO
LEDB4
LEDB3
5
4
LEDB5
LEDB6
GND
GND
ISET/
SCL
VDD
VDD
ISET/
SCL
GND
GND
LEDB6
LEDB5
4
3
LEDA5
LEDA6
GND
GND
FSET/
SDA
VLDO
VLDO
FSET/
SDA
GND
GND
LEDA6
LEDA5
3
2
LEDA3
LEDA4
PWM/
INT
GND
SW_A
GND
SW_A
GND
SW_A
GND
SW_A
GND
SW_A
GND
SW_A
PWM/
INT
LEDA4
LEDA3
2
1
LEDA1
LEDA2
FB_A
SW_A
SW_A
SW_A
SW_A
SW_A
SW_A
FB_A
LEDA2
LEDA1
1
A
B
C
D
E
F
F
E
D
C
B
A
Terminal Functions
TERMINAL
TYPE
DESCRIPTION
NUMBER
NAME
A1, A2, A3,
B1, B2, B3,
LEDAx
A
LED Bank A Current Sink Terminal. If unused, this terminal may be left floating.
A4, A5, A6,
B4, B5, B6
LEDBx
A
LED Bank A Current Sink Terminal. If unused, this terminal may be left floating.
C1
FB_A
A
Feedback terminal for the Bank A Boost Converter.
C2
PWM/INT
I
Dual function terminal. When BRTMODE = 00, 10, or 11, this is a PWM input terminal. When
BRTMODE = 01, this terminal is a programmable interrupt terminal. In this mode, this is an
open drain output that pulls low when a fault condition occurs.
C3, C4, D3, D4
GND
G
Ground for analog and digital blocks. These terminals should be connected to a noise-free
GND plane if possible (separate plane than GND_SW_x terminals).
C5
EN/VDDIO
I
Backlight Enable terminal and VDDIO power terminal + reference terminal for I2C
communication. This terminal should be connected to IO voltage with low impedance route to
avoid voltage ripple on this terminal.
C6
FB_B
A
Feedback terminal for the Bank B Boost Converter.
D1, E1, F1
SW_A
A
Bank A Boost Converter Switch
D2, E2, F2
GND_SW_A
G
Bank A Boost Converter Switch Ground. These terminals can be connected to noisy GND due
to high current spikes.
D5, E5, F5
GND_SW_B
G
Bank B Boost Converter Switch Ground. These terminals can be connected to noisy GND due
to high current spikes.
D6, E6, F6
SW_B
A
Bank B Boost Converter Switch
E3
FSET/SDA
I/O/A
E4
ISET/SCL
I/A
Dual Function terminal. When I2C is not used (for example, if BRTMODE=00), this terminal
can be used to set the full-scale LED current by connecting a resistor between the terminal
and a ground reference. When I2C is used (for example, BRTMODE = 01, 10, or 11), this
terminal is connected to a SCL line of an I2C bus.
F3
VLDO
P
Internal LDO Output terminal. CVLDO bypass capacitor must be connected between this
terminal and ground.
F4
VDD
P
Device power supply terminal. Provide 2.7-V to 20-V supply to this terminal. This terminal is
an input of the internal LDO regulator. The output of the internal LDO powers the device
blocks.
Dual Function terminal. When I2C is not used (for example, BRTMODE = 00), this terminal
can be used to set the boost switching frequency and/or LED PWM frequency by connecting
a resistor between the terminal and a ground reference. When I2C is used (for example,
BRTMODE = 01, 10, or 11), this terminal is connected to a SDA line of an I2C bus.
A: Analog, G: Ground Terminal, P: Power Terminal, I: Input Terminal, O: Output Terminal
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7 Specifications
7.1 Absolute Maximum Ratings (1)
Over operating free-air temperature range (unless otherwise noted)
VDD
Voltage on VDD
VLDO
Voltage on VLDO
V(PWM/INT,
EN/VDDIO/
FSET/SDA,
ISET/SCL)
Voltage on logic terminals
V(SW_A, SW_B,
LEDxy, FB_x)
Voltage on analog terminals
PD
Continuous Power Dissipation
TA
Operating ambient temperature range
(3)
Maximum operating junction temperature
Note
(3)
(4)
22
–0.3
6
–0.3
31
UNIT
V
Internally
limited
Tsoldering
(2)
MAX
(2)
TJ
(1)
MIN
–0.3
(3)
–40
85
–40
125
°C
(4)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150°C (typ.) and
disengages at TJ = 137°C (typ.).
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be degraded. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP
= 125ºC), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the
part/package in the application (θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX).
For detailed soldering specifications and information, please refer to Application Note AN1112.
7.2 Handling Ratings
MIN
TSTORAGE
Storage temp range
VHBM
Human body model (HBM) voltage (1)
VCDM
Charged device model (CDM)
(1)
(2)
4
–65
(2)
MAX
UNIT
150
°C
2000
250
V
Level listed above is the passing level per ANSI/ESDA/JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows safe
manufacturing with a standard ESD control process. Terminals listed as 2 kV may actually have higher performance.
Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250-V CDM allows safe
manufacturing with a standard ESD control process. Terminals listed as 250 V may actually have higher performance
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7.3 Recommended Operating Conditions (1) (2)
Over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VDD – Voltage on VDD
2.7
20
VLDO – Voltage on VLDO
2.7
5.5
V (EN/VDDIO) – Supply voltage for digital I/O
1.7
5.5
V (PWM/INT, FSET/SDA, ISET/SCL) – Voltage on logic terminals
0
5.5
V (SW_A, SW_B, LEDxy, FB_x)
0
28
(1)
(2)
UNIT
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device a these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to the potential at the GND terminals.
7.4 Thermal Information
Over operating free-air temperature range (unless otherwise noted)
THERMAL METRIC (1)
(2)
DSBGA
(36 TERMINALS)
UNIT
θJA
Junction-to-ambient thermal resistance (θJA)
76.2
°C/W
θJC
Junction-to-case (top) thermal resistance
0.3
°C/W
θJB
Junction-to-board thermal resistance
16.3
°C/W
ΨJT
Junction-to-top characterization parameter
1.8
°C/W
ΨJB
Junction-to-board characterization parameter
16.3
°C/W
(1)
(2)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design.
7.5 Electrical Characteristics (1) (2)
Limits apply over the full ambient temperature range –40°C ≤ TA ≤ 85°C. Unless otherwise specified: VDD = 3.6 V, EN/VDDIO
= 1.8 V, L1 = L2 = 6.8 µH, CIN_A = CIN_B = 10 µF, COUT_A = COUT_B = 10 µF, CVLDO = 10 µF, CVDD = 1 µF. (3)
PARAMETER
IIN
TEST CONDITIONS
MIN
TYP
Shutdown supply current
EN = L and PWM/INT = L
Standby supply current
EN = H and PWM/INT = L, ON bit =
0
19
EN = H, ON bit = 1, no current going
through LED outputs
4.2
Normal mode supply current
MAX
UNIT
1
fOSC
Internal oscillator frequency
accuracy
-7%
TTSD
Thermal shutdown threshold
150
TTSD_hyst
Thermal shutdown hysteresis
13
tSTART-UP
Start-up time (4)
30
µA
mA
7%
5
°C
7
ms
BOOST CONVERTER (Applies for both boost converters)
VBST_MIN
Minimum output voltage
VBST_MAX
Maximum output voltage
VMAX
VMAX
VMAX
VMAX
= 00
= 01
= 10
= 11
V
V
IMAX
SW FET current limit
RNMOS
NMOS switch-ON resistance
ISW = 0.5 A
0.16
Ω
ILOAD
Continuous load current
VBATT = 3 V, VOUT = 26.6 V.
Typical application.
180
mA
(1)
(2)
(3)
(4)
2.7
7
18
22
25
28
3.1
3.5
A
All voltages are with respect to the potential at the GND terminals.
Min and Max limits are specified by design, test, or statistical analysis.
Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics
Start-up time is measured from the moment the ON bit is set high to the moment when backlight is enabled.
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Electrical Characteristics(1)(2) (continued)
Limits apply over the full ambient temperature range –40°C ≤ TA ≤ 85°C. Unless otherwise specified: VDD = 3.6 V, EN/VDDIO
= 1.8 V, L1 = L2 = 6.8 µH, CIN_A = CIN_B = 10 µF, COUT_A = COUT_B = 10 µF, CVLDO = 10 µF, CVDD = 1 µF.(3)
PARAMETER
TEST CONDITIONS
ƒSW
Switching frequency
ƒSW_ACCURACY
Boost oscillator accuracy
VOVP_THR
Overvoltage protection voltage
threshold
VOUT/VIN
Conversion ratio
No load, BFREQ = 1
ΔVSW/toff-on
SW node voltage slew rate
during OFF-to-ON transition
Load current 120 mA. Boost slew
rate set to fastest (SRON = 00b).
ΔVSW/ton-off
SW node voltage slew rate
during ON-to-OFF transition
ƒMOD
Modulation frequency
(percentage of the SW
frequency)
MIN
BFREQ = 0
BFREQ = 1
TYP
MAX
500
1000
–7%
UNIT
kHz
7%
VBST_MAX
+1.6 V
1.3
V
10
12.5
V/ns
19.5
FMOD_DIV = 00
FMOD_DIV = 01
FMOD_DIV = 10
FMOD_DIV = 11
0.47%
0.27%
0.17%
0.12%
CURRENT SINKS
Outputs LEDA1...LEDB6, VLEDxx =
28 V
ILEAKAGE
Leakage current
IMAX
Maximum sink current
LEDA1...B6
IOUT
Output current accuracy (5)
IMATCH
Matching
ƒLED_PWM
LED switching frequency
VSAT
Saturation voltage
(5)
(6)
1
50
Output current set to 23 mA.
Current scale set to 23 mA. PWM =
100%
–4%
µA
mA
4%
1%
5%
PFREQ = 000b
PFREQ = 111b
4.9
39.1
Output current set to 23 mA
200
260
Output current set to 30 mA
250
340
kHz
mV
PWM INTERFACE CHARACTERISTICS
ƒPWM
PWM input frequency
tMIN_ON
Minimum pulse ON time
100
tMIN_OFF
Minimum pulse OFF time
100
tstart-up
Turn-on delay from standby to
backlight on
PWM input active, ON bit written
high
tSTBY
Turn-off delay
PWM input low time before entering
standby mode (if PWMSB = 1)
52
ms
PWM input resolution
ƒIN
ƒIN
ƒIN
ƒIN
ƒIN
ƒIN
12
12
11
10
9
8
bits
PWMRES
75
<
<
<
<
<
<
50000
ns
7
2.4 kHz
4.8 kHz
9.6 kHz
19.5 kHz
25 kHz
50 kHz
Hz
ms
UNDERVOLTAGE PROTECTION
VUVLO
VDD UVLO threshold voltage
VDD falling
2.5
VDD rising
2.6
V
LOGIC INTERFACE
Logic Input EN/VDDIO
VEN/VDDIO
Supply voltage range
II
Input current
(5)
(6)
6
1.7
5.5
20
V
µA
Output Current Accuracy is the difference between the actual value of the output current and programmed value of this current.
Matching is the maximum difference from the average. For the constant current sinks on the part (OUTA1 to OUTB6), the following are
determined: the maximum output current (MAX), the minimum output current (MIN), and the average output current of all outputs (AVG).
Matching number is calculated: (MAX-MIN)/AVG. The typical specification provided is the most likely norm of the matching figure for all
parts. LED current sinks were characterized with 1 V headroom voltage. Note that some manufacturers have different definitions in use.
Saturation voltage is defined as the voltage when the LED current has dropped 10% from the value measured at 1 V.
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Electrical Characteristics(1)(2) (continued)
Limits apply over the full ambient temperature range –40°C ≤ TA ≤ 85°C. Unless otherwise specified: VDD = 3.6 V, EN/VDDIO
= 1.8 V, L1 = L2 = 6.8 µH, CIN_A = CIN_B = 10 µF, COUT_A = COUT_B = 10 µF, CVLDO = 10 µF, CVDD = 1 µF.(3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Logic Input PWM/INT, FSET/SDA, ISET/SCL
VIL
Input low level
VIH
Input high level
II
Input current, VIO = 1.7 V to
5.5 V
0.3 x
EN/VDDIO
V
0.7 x
EN/VDDIO
V
-1.0
1.0
µA
0.4
V
Logic Output FSET/SDA, PWM/INT
VOL
Output low level
IPULL-UP = 3 mA
0.3
7.6 I2C Serial Bus Timing Parameters (FSET/SDA, ISET/SCL)
MIN
TYP
MAX
UNIT
400
kHz
fSCL
Clock Frequency
1
Hold Time (repeated) START Condition
0.6
μs
2
Clock Low Time
1.3
μs
3
Clock High Time
600
ns
4
Setup Time for a Repeated START Condition
600
ns
5
Data Hold Time
50
ns
6
Data Setup Time
7
Rise Time of SDA and SCL
20+0.1xCb
300
ns
8
Fall Time of SDA and SCL
15+0.1xCb
300
ns
9
Set-up Time for STOP condition
600
ns
10
Bus Free Time between a STOP and a START Condition
1.3
μs
Cb
Capacitive Load Parameter for Each Bus Line.
Load of One Picofarad Corresponds to One Nanosecond.
10
tresponse
Delay from EN/VDDIO rising to I2C bus active
100
ns
200
ns
1
ms
Figure 1. I2C Timing Parameters
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7.7 Typical Characteristics
Measured at room temperature unless otherwise noted. Maximum LED current set to 23 mA per string. DC-DC Efficiency is
defined as POUT/PIN, where POUT is total output power measured from boost output(s). LED Drive Efficiency is defined as
PLED/PIN , where PLED is actual power consumed in LEDs.
94
92
Inductor: IHLP2525CZER6R8M01
Inductor: IHLP2525CZER6R8M01
90
90
88
86
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
84
82
80
0
50
100
150
200
250
Total Load (mA)
L = 6.8 µH
LED Drive Efficiency (%)
DC-DC Efficiency (%)
92
88
86
84
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
82
80
300
0
12 x 6 LEDs
+25°C
L = 6.8 µH
Figure 2. Boost Efficiency
80
100
C002
12 x 6 LEDs
+25°C
Figure 3. LED Drive Efficiency
85
80
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
75
70
0
50
100
150
200
250
Total Load (mA)
L = 6.8 µH
LED Drive Efficiency (%)
Inductor: IHLP2525CZER6R8M01
90
DC-DC Efficiency (%)
60
95
Inductor: IHLP2525CZER6R8M01
90
85
80
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
75
70
300
0
20
12 x 7 LEDs
40
60
80
Brightness (%)
C003
+25°C
L = 6.8 µH
Figure 4. Boost Efficiency
100
C004
12 x 7 LEDs
+25°C
Figure 5. LED Drive Efficiency
95
95
Inductor: IHLP2525CZER6R8M01
90
85
80
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
75
70
0
50
100
150
200
Total Load (mA)
L = 6.8 µH
12 x 7 LEDs
250
300
LED Drive Efficiency (%)
Inductor: IHLP2525CZER6R8M01
DC-DC Efficiency (%)
40
Brightness (%)
95
90
85
80
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
75
70
0
20
-40°C
40
60
80
Brightness (%)
C005
L = 6.8 µH
Figure 6. Boost Efficiency
8
20
C001
12 x 7 LEDs
100
C006
-40°C
Figure 7. LED Drive Efficiency
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Typical Characteristics (continued)
Measured at room temperature unless otherwise noted. Maximum LED current set to 23 mA per string. DC-DC Efficiency is
defined as POUT/PIN, where POUT is total output power measured from boost output(s). LED Drive Efficiency is defined as
PLED/PIN , where PLED is actual power consumed in LEDs.
95
95
Inductor: IHLP2525CZER6R8M01
Inductor: IHLP2525CZER6R8M01
LED Drive Efficiency (%)
DC-DC Efficiency (%)
90
85
80
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
75
70
0
50
100
150
200
85
80
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
75
70
250
Total Load (mA)
L = 6.8 µH
90
300
0
12 x 7 LEDs
+85°C
L = 6.8 µH
Figure 8. Boost Efficiency
60
80
100
C008
12 x 7 LEDs
+85°C
Figure 9. LED Drive Efficiency
90
Inductor: FDSD0415-H-4R7M
80
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
75
70
50
100
150
200
250
Total Load (mA)
L = 4.7 µH
LED Drive Efficiency (%)
85
0
Inductor: FDSD0415-H-4R7M
88
90
DC-DC Efficiency (%)
40
Brightness (%)
95
86
84
82
80
78
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
76
74
72
70
300
0
20
12 x 6 LEDs
40
60
80
Brightness (%)
C009
+25°C
L = 4.7 µH
Figure 10. Boost Efficiency
100
C010
12 x 6 LEDs
+25°C
Figure 11. LED Drive Efficiency
95
90
Inductor: FDSD0415-H-4R7M
80
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
75
70
50
100
150
200
Total Load (mA)
L = 4.7 µH
12 x 7 LEDs
250
300
LED Drive Efficiency (%)
85
0
Inductor: FDSD0415-H-4R7M
88
90
DC-DC Efficiency (%)
20
C007
86
84
82
80
78
VIN = 3.0 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.4 V
VIN = 7.4 V
VIN = 8.4 V
76
74
72
70
0
20
+25°C
40
60
80
Brightness (%)
C011
L = 4.7 µH
Figure 12. Boost Efficiency
12 x 7 LEDs
100
C012
+25°C
Figure 13. LED Drive Efficiency
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Typical Characteristics (continued)
Measured at room temperature unless otherwise noted. Maximum LED current set to 23 mA per string. DC-DC Efficiency is
defined as POUT/PIN, where POUT is total output power measured from boost output(s). LED Drive Efficiency is defined as
PLED/PIN , where PLED is actual power consumed in LEDs.
4.0
3.5
7
3.0
6
2.5
5
IVDD (mA)
Mismatch (%)
8
+25 °C
±40 ƒC
+85 °C
Inductor: IHLP2525CZER6R8
2.0
1.5
4
3
1.0
2
0.5
1
0.0
0
+25 °C
±40 ƒC
+85 °C
Inductor: IHLP2525CZER6R8
0
20
40
60
80
100
Brightness (%)
VDD = 3.7 V
0
20
12 x 7 LEDs
VDD = 3.7 V
Figure 14. LED Current Mismatch
140
60
80
100
C014
12 x 7 LEDs
Figure 15. VDD Current vs. Load
60
Phase
Gain
120
5 mA
10 mA
15 mA
20 mA
23 mA
25 mA
30 mA
50 mA
50
100
LED Current (mA)
Phase (Deg), Gain (dB)
40
Brightness (%)
C013
80
60
40
40
30
20
20
10
0
0
±20
1000
10000
Frequency (Hz)
L = 4.7 µH
0.0
100000
0.1
0.2
0.3
VDD = 3.7V
IOUT = 138 mA/boost
0.4
0.5
0.6
0.7
0.8
0.9
Headroom Voltage (V)
C015
VBOOST = 23 V
+25°C
1.0
C016
VDD = 3.7 V
Figure 17. LED Current Vs. Headroom Voltage
Figure 16. Typical Boost Converter Gain and Phase Plot
60
40
30
20
10
40
30
20
10
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Headroom Voltage (V)
-40°C
1.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Headroom Voltage (V)
C017
VDD = 3.7 V
+85°C
Figure 18. LED Current Vs. Headroom Voltage
10
5 mA
10 mA
15 mA
20 mA
23 mA
25 mA
30 mA
50 mA
50
LED Current (mA)
50
LED Current (mA)
60
5 mA
10 mA
15 mA
20 mA
23 mA
25 mA
30 mA
50 mA
1.0
C018
VDD = 3.7 V
Figure 19. LED Current Vs. Headroom Voltage
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8 Detailed Description
8.1 Overview
The LP8555 is a white LED driver featuring an asynchronous boost converter and 12 high-precision current sinks
that can be controlled by a PWM input signal, an I2C master, or both. The boost converter uses adaptive output
voltage control for setting the optimal LED driver voltages as high as 28 V. This feature minimizes the power
consumption by adjusting the voltage to the lowest sufficient level under all conditions. The converter can
operate at two switching frequencies: 500 and 1000 kHz pre-configured via EPROM.
Proprietary Hybrid PWM and Current Dimming mode allows higher system power saving. In addition, phaseshifted LED PWM dimming allows reduced audible noise and smaller boost output capacitors.
The LP8555 has a full set of safety features that ensure robust operation of the device and external components.
The set consists of input undervoltage lockout, thermal shutdown, overcurrent protection, four levels of
overvoltage protection, and LED open and short detection.
8.2 Functional Block Diagram
VBATT
VDD
SW_A
FB_A
LP8555
VLDO
LDO
Boost Converter Bank A
Reference
Voltage
Switching
Frequency
500, 1000 kHz
Thermal
Shutdown
PWM Control
GND_SW_A
Oscillator
EN/VDDIO
POR
EPROM
Headroom
Control
Fault Detection
(Open LED, Overcurrent, Over-voltage)
UVLO
LED Current Sinks
LEDA1
LEDA2
PWM/INT
LEDA3
PWM Detector
LEDA4
RFSET
LEDA5
FSET/SDA
ISET/SCLK
2
I C Slave
LEDA6
RISET
LEDB1
ADCs for LED
Current and PWM/
Boost Frequency
Selection
PWM Generator
LEDB2
PWM & Current
Dimming Control
LEDB3
LEDB4
LEDB5
LEDB6
Boost Converter Bank B
GND_SW_B
Switching
Frequency
500, 1000 kHz
VBATT
PWM Control
SW_B
Headroom
Control
FB_B
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8.3 Features Description
8.3.1 Boost Converter Overview
8.3.1.1 Operation
The boost DC/DC converters generate 7-V to 28-V boost output voltage from a 2.7-V to 20-V boost input voltage
(input voltage must be lower than VBOOST). The maximum boost output voltage can be set digitally by preconfiguring EPROM memory (VMAX field).
The converter is a magnetic switching PWM mode DC/DC boost converter with a current limit. It uses CPM
(current programmed mode) control, where the inductor current is measured and controlled with the feedback.
During start-up, the soft-start function reduces the peak inductor current. Figure 20 shows the boost block
diagram.
FB
SW
Startup
VREF
OVP
Light
Load
R
R
+
gm
+
-
R
S
Boost Output
Voltage
Adjustment
Osc/
Ramp
R
Switch
Driver
OCP
+
-
™
Figure 20. Boost Converter Functional Block Diagram
Both boost converters are operating at 180° phase shift to reduce current spikes from the input rail and EMI.
8.3.1.2 Protection
Three different protection schemes are implemented:
1. Overvoltage protection, limits the maximum output voltage:
– Overvoltage protection limit changes dynamically based on output voltage setting. If the boost voltage is
over 1.6 V higher than the adaptive control set value, the boost will stop switching.
– Keeps the output below breakdown voltage. The output voltage control limits the boost maximum voltage
to 18...28 V (EPROM programmable).
– Prevents boost operation if battery voltage is much higher than desired output.
2. Overcurrent protection, limits the maximum inductor current to 3.1 A (EPROM programmable).
3. Duty cycle limiting.
8.3.1.3 Setting Boost Switching Frequency
The LP8555 boost converter switching frequency can be set by pre-configuring EPROM memory with the choice
of boost frequency (BFREQ field). Table 1 summarizes setting of the switching frequency.
Table 1. Setting Boost Switching Frequency
12
BFREQ
ƒSW [kHz]
0
500
1
1000
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8.3.1.4 Adaptive Boost Output Voltage Control
The boost converters operate in adaptive voltage control mode in typical application. The voltages at the LED
terminals is monitored by the control loop. It raises the boost voltage when the measured voltage of ANY of the
LED strings in a bank falls below the voltage threshold of its corresponding LOW comparator. If the headrooms
of ALL of the LED strings in a bank are above the voltage threshold of their corresponding MID comparator, then
the boost voltage is lowered. Both banks have independent boost voltage control to save power in case of Vf
mismatch between LED strings.
The initial boost voltage is configured with the VINIT field. The VMAX field sets the maximum boost voltage.
When an LED terminal is open, the monitored voltage will never have enough headroom and the adaptive mode
control loop will keep raising the boost voltage. The VMAX field allows the boost voltage to be limited to stay
under the voltage rating of the external components.
Driver
Headroom
VBOOST
LEDA1 String VF
LEDA6 String VF
LEDA5 String VF
LEDA4 String VF
LEDA3 String VF
LEDA2 String VF
LEDA1 String VF
VOUT_A
Time
Figure 21. Boost Adaptive Control Principle for Bank A Boost Converter With Phase Shifted Outputs
8.3.1.5 EMI Reduction
The LP8555 features three EMI reduction schemes.
First scheme, Programmable Slew Rate Control, uses a combination of four drivers for boost switch. Enabling all
four drivers allows boost switch on/off transition times to be the shortest. On the other hand, enabling just one
driver allows boost switch on/off transition times to be the longest. The longer the transition times, the lower the
switching noise on the SW node. It should also be noted that the shortest transition times bring the best
efficiency as the switching losses are the lowest. Same controls effect both boost converters.
The second EMI reduction scheme is the Spread Spectrum Scheme which deliberately spreads the frequency
content of the boost switching waveform, which inherently has a narrow bandwidth, makes the switching
waveform's noise spectrum bandwidth wider and ultimately reduces its EMI spectral density.
The third feature for reducing EMI is Phase Shifted Clocking mode, where boost converters’ clocks are operating
180° phase shifted. This prevents boost switches switching on at the same time when operating in PWM mode.
This reduces input rail load transient spikes caused by boost inductor current and gate driver currents.
Duty Cycle D = 1 - VIN / VOUT
tSW = 1 / fSW
fSW = 500 or 1000 kHz
Slew Rate Control,
Programmable
Spread Spectrum Scheme,
Programmable Pseudo Random SW
Frequency Changes to Reduce EMI
Figure 22. Boost Converter EMI Reduction Schemes
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8.3.2 Brightness Control
The brightness can be controlled using an external PWM signal or the Brightness registers accessible via an I2C
interface, or both. Which of these two input sources are selected is set by the BRTMODE EPROM bits. How the
brightness is controlled in each of the four possible modes is described in the following sections.
8.3.2.1 PWM Input Duty Measurement
When using PWM input for brightness control the input PWM duty cycle is measured as described in following
diagram and the brightness is controlled based on the result. When changing the brightness it must be noted that
the measurement cycle is from rising edge to next rising edge and brightness change must be done accordingly
(time from rising to rising edge is constant (=cycle time) and falling edge defines the brightness).
Cycle Time
tPWM
On-time
tON2
20%
On-time
tON1
20%
40%
40%
PWM/INT
Cycle Time
tPWM
Duty =
tON
t PWM
Change in Duty
on this Edge
Figure 23. PWM Input Duty Cycle Measurement
8.3.2.2 BRTMODE = 00
With BRTMODE = 00, the LED output current is controlled by the PWM input duty cycle. The PWM detector
block measures the duty cycle at the PWM/INT terminal and uses it to generate a PWM-based brightness code.
Before the output is generated, the code goes through the curve Shaper block. Then the code goes into the
Hybrid PWM and Current Dimming block which determines the range of the PWM and Current control. The
outcome of the Hybrid PWM and Current Dimming block is Current and/or up to 6 PWM output signals.
MAXCURR
CURRENT
PWM Input
PWM Detector
Curve Shaper
Hybrid PWM
and Current
Dimming
PWM
Generator
PWM
THRESHOLD
Figure 24. BRTMODE = 00 Brightness Control
14
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8.3.2.3 BRTMODE = 01
With BRTMODE = 01, the LED output current is controlled by the BRTHI/BRTLO registers. Before the output is
generated the BRTHI/BRTLO registers-based brightness code goes through the Curve Shaper block. Then the
code goes into the Hybrid PWM and Current Dimming block which determines the range of the PWM and
Current control. The outcome of the Hybrid PWM and Current Dimming block is Current and/or up to 6 PWM
output signals.
MAXCURR
CURRENT
I2C Input
Brightness
Curve Shaper
Hybrid PWM
and Current
Dimming
PWM
Generator
PWM
THRESHOLD
Figure 25. BRTMODE = 01 Brightness Control
8.3.2.4 BRTMODE = 10
With BRTMODE = 10, the LED output current is controlled by PWM input duty cycle and the BRTHI/BRTLO
registers. The PWM detector block measures the duty cycle at the PWM/INT terminal and uses it to generate
PWM-based brightness code. Before the code is multiplied with the BRTHI/BRTLO registers-based brightness
code, it goes through the Curve Shaper block. After the multiplication, the resulting code goes into the Hybrid
PWM and Current Dimming block which determines the range of the PWM and Current control. The outcome of
the Hybrid PWM and Current Dimming block is Current and/or up to 6 PWM output signals.
I2C Input
MAXCURR
Brightness
CURRENT
PWM Input
PWM Detector
Curve Shaper
Hybrid PWM
and Current
Dimming
PWM
Generator
PWM
THRESHOLD
Figure 26. BRTMODE = 10 Brightness Control
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8.3.2.5 BRTMODE = 11
With BRTMODE = 11, the LED output current is controlled by the PWM input duty cycle and the BRTHI/BRTLO
registers. The PWM detector block measures the duty cycle at the PWM/INT terminal and uses it to generate
PWM-based brightness code. In this mode, the BRTHI/BRTLO registers-based brightness code goes through the
Curve Shaper block before it is multiplied with the PWM input duty cycle-based brightness code. After the
multiplication, the resulting code goes into the Hybrid PWM and Current Dimming block which determines the
range of the PWM and Current control. The outcome of the Hybrid PWM and Current dimming block is Current
and/or up to 6 PWM output signals.
I2C Input
MAXCURR
Brightness
Curve Shaper
CURRENT
PWM Input
PWM Detector
Hybrid PWM
and Current
Dimming
PWM
Generator
PWM
THRESHOLD
Figure 27. BRTMODE = 11 Brightness Control
16
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8.3.2.6 Hybrid PWM and Current Dimming Control
Hybrid PWM and Current Dimming control combines PWM dimming and LED current-dimming control methods.
With this dimming control, it is possible to achieve better optical efficiency from the LEDs compared to pure PWM
control while still achieving smooth and accurate control and low brightness levels. The switch point from currentto-PWM control is set with THRESHOLD EPROM field, available settings are Pure PWM dimming (THRESHOLD
= 111b), 25% switch point (THRESHOLD = 101b) and Pure Current Dimming (THRESHOLD = 000b). 25%
setting allows good compromise between good matching of the LEDs brightness/white point at low brightness
and good optical efficiency.
PWM CONTROL
(THRESHOLD = 111b)
Max Current can be set with <MAXCURR>
LED CURRENT
EPROM Bits or RISET Resistor
25%
50%
100%
Brightness (Controlled
with PWM Input Duty)
Figure 28.
LED CURRENT
PWM & CURRENT CONTROL with
Switch Point of 25% of ILED_MAX
(THRESHOLD = 101b)
PWM CONTROL
CURRENT CONTROL
100%
Max Current can be set with <MAXCURR>
EPROM Bits or RISET Resistor
50%
25%
25%
100%
Brightness (Controlled
with PWM Input Duty)
Figure 29.
CURRENT CONTROL
(THRESHOLD = 000b)
CURRENT CONTROL
100%
Max Current can be set with <MAXCURR>
LED CURRENT
EPROM Bits or RISET Resistor
100%
Figure 30.
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8.3.2.7 Setting PWM Dimming Frequency
The LP8555 LED PWM dimming frequency can be set either by an external resistor (PFSET = 1 selection),
RFSET, or by pre-configuring EPROM memory with the choice of PWM dimming frequency (PFREQ field). Table 2
summarizes setting of the PWM dimming frequency. Setting the PWM dimming frequency using an external
resistor is separately shown in Table 3.
Table 2. Setting PWM Dimming Frequency
PFSET
RFSET
PFREQ
ƒPWM [kHz]
1
See Table 3
Don't Care
See Table 3
0
Don't Care
000
4.9
0
Don't Care
001
9.8
0
Don't Care
011
19.5
0
Don't Care
111
39.1
Table 3. Setting PWM Dimming Frequency With an External Resistor
18
PFSET
RFSET [Ω] (Tolerance)
ƒPWM [kHz]
1
63.4k (±1%)
4.9
1
52.3k, 53.6k (±1%)
9.8
1
39.2k (±1%)
19.5
1
23.2k (±1%)
39.1
1
Grounded or floating
19.5
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8.3.2.8 Setting Full-Scale LED Current
The LP8555 full-scale LED current can be set either by an external resistor RISET (ISET = 1 selection), or by preconfiguring EPROM memory with the choice of full-scale LED current (MAXCURR field, ISET = 0). This register
can be also written with I2C before turning on backlight. Table 4 summarizes setting of the full-scale LED current.
Table 4. Setting Full-Scale LED Current
ISET
RISET [Ω] (Tolerance)
MAXCURR
ILED [mA]
1
Floating
Don't Care
23
1
63.4k (±1%)
Don't Care
5
1
52.3k, 53.6k (±1%)
Don't Care
10
1
44.2k, 45.3k (±1%)
Don't Care
15
1
39.2k (±1%)
Don't Care
20
1
34.0k (±1%)
Don't Care
23
1
30.1k (±1%)
Don't Care
25
1
26.1k (±1%)
Don't Care
30
1
23.2k (±1%)
Don't Care
50
1
0 (grounded)
Don't Care
23
0
Don't Care
000
5
0
Don't Care
001
10
0
Don't Care
010
15
0
Don't Care
011
20
0
Don't Care
100
23
0
Don't Care
101
25
0
Don't Care
110
30
0
Don't Care
111
50
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8.3.2.9 Phase-Shift PWM Scheme
The Phase-Shift PWM Scheme (PSPWM) allows delaying of the time when each LED current sink is active.
When the LED current sinks are not activated simultaneously, the peak load current from the boost output is
greatly decreased during PWM dimming. This reduces the ripple seen on the boost output and allows smaller
output capacitors to be used. Reduced ripple also reduces the output ceramic capacitor audible ringing. The
PSPWM scheme also increases the load frequency seen on the boost output by up to six times and therefore
transfers the possible audible noise to the frequencies outside of the audible range.
The phase difference between each active driver is automatically determined and is 360º / number of active
drivers in a bank.
Phase Difference Cycle Time
1/(fPWM)
60 Degrees
LEDA1
LEDA2
LEDA3
LEDA4
LEDA5
LEDA6
LEDB1
LEDB2
LEDB3
LEDB4
LEDB5
LEDB6
Figure 31. Phase Shifting Example With All 12 Channels Active. (Note: Bank A And Bank B are in the
Same Phase.)
8.3.3 LED Brightness Slopes, Normal and Advanced
The transition time between two brightness values can be programmed with the STEP EPROM field from 0 to
200 ms. The same slope time is used for sloping up and down. With advanced slope the brightness changes can
be made more pleasing to the human eye. It is implemented with a digital smoothing filter. The filter strength is
set with SMOOTH EPROM field.
20
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Brightness (PWM)
Sloper Input
Brightness (PWM)
PWM Output
Time
Normal Slope
Advanced Slope
Time
tSlope Timet
Figure 32. Sloping Principle
8.3.4 Start-up and Shutdown Sequences
Depending on brightness control mode the LP8555 can be started up or shut down differently. Below are
explained typical start-up/shutdown sequences with corresponding timings for operation states. Diagrams have
more details and illustrated waveforms for typical usage cases.
8.3.4.1 Start-up With PWM Input Brightness Control Mode (BRTMODE = 00b)
When VDD and EN/VDDIO are above min operational value the LP8555 enters start-up mode. During start-up
mode the LDO is started, and EPROM values are read. I2C is available after the start-up sequence has ended.
In standby mode the device waits for the ON bit to go high to start the boost start-up sequence. In standby mode
PWM input duty cycle measurement is active.
Once the ON bit is set to 1 (it can be also programmed to 1 by default in EPROM, and no I2C write is then
needed for entering active mode), boost is started, and device enters active mode with brightness set by PWM
input duty cycle. If no brightness is set, the backlight stays off until two PWM pulses are received in the PWM
input, or if PWM input is set high for more than 1/75 Hz time. Boost starts initially to the level programmed in
EPROM, and after backlight is turned on the adaptive control adjusts the voltage to get to the minimal headroom
voltage.
8.3.4.2 Shutdown With PWM Input Brightness Control Mode (BRTMODE = 00b)
The backlight can be turned off by setting PWM input low or by writing the ON bit low. After a 1/75Hz timeout
period in the PWM input, the backlight slopes down (if slope is enabled), and boost is returned to the initial
voltage level programmed to the EPROM. If the backlight is shut down with the ON bit, it shuts down immediately
even if slopes are enabled and boost turns off as well. To enter standby mode where boost is disabled and the
power consumption is minimal, the ON bit must be written to 0. If PWMSB bit has been programmed to 1, then
the LP8555 enters standby mode when PWM input has been low for more than 50 ms even if the ON bit is high.
The device shuts down completely by setting EN/VDDIO and/or VDD to low state.
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200µs typ.
1ms max
MODE
OFF
STARTUP
VDD
5ms typ.
7ms max
STANDBY
BOOST STARTUP
ACTIVE
STANDBY
OFF
Timing between these UVLO
two signals is not critical
Timing between these
two signals is not critical
EN/VDDIO
INPUTS
I2C unavailable
ON bit (I2C)
I2C unavailable
Backlight started with
writing ON bit high
2 Full PWM Cycles needed
for sampling PWM input
BRT[11:0] register
1/75Hz timeout
PWM/INT
VLDO
OUTPUTS
VINIT
VINIT
Adaptation to LED VF
No active discharge
VBOOSTx
Ramp time and shape
defined in registers
ILED_OUTx
Figure 33. Start-up and Shutdown with PWM Input Control, ON Bit = 0 (BRTMODE = 00b)
200µs typ.
1ms max
MODE
OFF
STARTUP
VDD
5ms typ.
7ms max
STANDBY
BOOST STARTUP
ACTIVE
STANDBY
OFF
Timing between these UVLO
two signals is not critical
Timing between these
two signals is not critical
EN/VDDIO
INPUTS
I2C unavailable
ON bit (I2C)
Note: If PWMSB = 1, then device enters
standby mode after PWM input has been low
for 50ms timeout period even if ON bit is 1.
I2C unavailable
2 Full PWM Cycles needed
for sampling PWM input
BRT[11:0] register
1/75Hz timeout
PWM/INT
VLDO
OUTPUTS
VINIT
Adaptation to LED VF
VINIT
No active discharge
VBOOSTx
Ramp time and shape
defined in registers
ILED_OUTx
Figure 34. Start-up and Shutdown with PWM Input Control, ON Bit = 1 (BRTMODE = 00b)
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8.3.4.3 Start-up With I2C Brightness Control Mode (BRTMODE = 01b)
When VDD and EN/VDDIO are above min operational value, the LP8555 enters start-up mode. During start-up
mode the LDO is started, and EPROM values are read. I2C is available after the start-up sequence has ended.
In standby mode the device waits for the ON bit to go high to start the boost start-up sequence. In standby mode
I2C is active, and brightness / other registers can be written.
Once the ON bit is set to 1 (it can be also programmed to 1 by default in EPROM and no I2C write is then
needed for entering active mode), boost is started, and device enters active mode with brightness set by I2C
brightness registers. If no brightness is set, the backlight stays off until brightness value is written to the I2C
register(s). Boost starts initially to the level programmed in EPROM and, after backlight is turned on, the adaptive
control adjusts the voltage to get to the minimal headroom voltage.
8.3.4.4 Shutdown With I2C Brightness Control Mode (BRTMODE = 01b)
The backlight can be turned off by setting the ON bit low, or by writing brightness to 0. The backlight shuts down
immediately if the ON bit is written low even if slope is enabled. If the backlight is turned off by writing brightness
to 0, brightness control does slope (if enabled), and the boost is returned to the initial voltage level programmed
to EPROM. To enter standby mode where boost is disabled and the power consumption is minimal, the ON bit
must be written to 0.
The device shuts down completely by setting EN/VDDIO and/or VDD to low state.
200µs typ.
1ms max
MODE
OFF
STARTUP
VDD
5ms typ.
7ms max
STANDBY
BOOST STARTUP
ACTIVE
STANDBY
OFF
Timing between these
two signals is not critical
Timing between these
two signals is not critical
EN/VDDIO
INPUTS
I2C unavailable
ON bit (I2C)
I2C unavailable
BRT[11:0] register
Brightness value can be also written after ON bit is
high. Boost is enabled anyway after writing ON bit high
RESET
PWM/INT
VLDO
OUTPUTS
VINIT
Adaptation to LED VF
No active discharge
VBOOSTx
Ramp time and shape
defined in registers
ILED_OUTx
Figure 35. Start-up And Shutdown With I2C Brightness Control Mode (BRTMODE = 01b)
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8.3.4.5 Start-up with I2C + PWM Input Brightness Control Mode (BRTMODE = 10 or 11b)
When VDD and EN/VDDIO are above min operational value, the LP8555 enters start-up mode. During start-up
mode the LDO is started, and EPROM values are read. I2C is available after the start-up sequence has ended.
In standby mode the device waits for the ON bit to go high to start the boost start-up sequence. In standby mode
I2C registers can be written and PWM input duty cycle measurement is active.
Once the ON bit is set to 1 (it can be also programmed to 1 by default in EPROM and no I2C write is then
needed for entering active mode), boost is started, and device enters active mode with brightness set by PWM
input duty cycle multiplied by I2C brightness register value. If no brightness is set, the backlight stays off until I2C
brightness register receives value and two PWM pulses are received in the PWM input, or if PWM input is set
high for more than 1/75 Hz time. Boost starts initially to the level programmed in EPROM and after backlight is
turned on, the adaptive control adjusts the voltage to get to the minimal headroom voltage.
8.3.4.6 Shutdown with I2C + PWM Input Brightness Control Mode (BRTMODE = 10 or 11b)
The backlight can be turned off by setting the ON bit low, or by setting brightness to 0 either by PWM input
(same 1/75 Hz timeout applies here as in PWM input control mode) or by I2C brightness register writes. The
backlight shuts down immediately if the ON bit is written low even if slope is enabled. If the backlight is turned off
by setting brightness to 0, brightness control does slope (if enabled, depending on which input is used – see
brightness control modes for details), and the boost is returned to the initial voltage level programmed to
EPROM. To enter standby mode where boost is disabled and the power consumption is minimal, the ON bit
must be written to 0.
The device shuts down completely by setting EN/VDDIO and/or VDD to low state.
200µs typ.
1ms max
MODE
OFF
STARTUP
VDD
5ms typ.
7ms max
STANDBY
BOOST STARTUP
ACTIVE
STANDBY
OFF
Timing between these
two signals is not critical
Timing between these
two signals is not critical
EN/VDDIO
INPUTS
I2C unavailable
ON bit (I2C)
I2C unavailable
BRT[11:0] register
multiplied with
PWM input duty
Brightness value can be also set after ON bit is high.
Boost is enabled anyway after writing ON bit high
RESET
VLDO
OUTPUTS
VINIT
Adaptation to LED VF
No active discharge
VBOOSTx
Ramp time and shape
defined in registers
ILED_OUTx
Figure 36. Start-up and Shutdown with I2C + PWM Input Brightness Control (BRTMODE = 01b)
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8.3.5 LED String Count Auto Detection
The LP8555 can be pre-configured to auto-detect the number of the LED strings attached. If the CONFIG.AUTO
bit is set to 1, the LP8555 will automatically remove the unused current sink and adjust phasing of the remaining
current sinks. The LED OPEN fault condition will not be set in this mode.
8.3.6 Fault Detection
The LP8555 has fault detection for LED OPEN, LED SHORT, UVLO, BST_OVP, BST_OCP, BST_UV and TSD.
Faults are recorded in the STATUS register. Each time the STATUS register is read, it is automatically cleared.
When BRTMODE is set to 01b any fault may be enabled to cause an interrupt on the PWM/INT terminal.
8.3.6.1 LED Short Detection
Voltages at the individual current sinks are constantly monitored for the LED SHORT fault. This fault may occur
when some LEDs in a string are electrically bypassed making that LED string shorter than the other LED strings.
The reduced forward voltage causes the current sink attached to that string to have a higher headroom voltage
than the other current sinks. When the headroom voltage is higher than the fault comparator threshold
(configured with the OV field in the LEDEN register) that current sink is disabled and the PWM phasing is
automatically adjusted. The fault comparator threshold may be configured for 1 V, 2 V, 3 V or 4 V.
8.3.6.2 LED Open Detection
Each current sink is also monitored for an LED OPEN condition. The condition is set when the headroom voltage
on one or more current sinks is below the LOW comparator threshold and the boost voltage is at the maximum.
This fault condition may be caused by one or more OPEN LED strings or by one or more current sinks shorted to
GND.
The AUTO bit of the CONFIG register determines how the LP8555 responds to an LED OPEN condition. If the
CONFIG.AUTO bit is set to 1, the LP8555 will automatically adjust the phasing to remove the current sink with
the LED OPEN condition. In this case the condition is normal and indicates an unpopulated LED string. If the
CONFIG.AUTO bit is set to 0, the LP8555 will immediately shut down the backlight whenever an LED OPEN
condition is detected on any enabled LED drivers. The backlight will not turn on again (regardless of the
COMMAND.ON bit) until the STATUS register is read.
8.3.6.3 Undervoltage Detection
The LP8555 continuously monitors the voltage on the VDD terminal. When the VDD voltage drops below 2.5 V
the backlight will be immediately shut down, and the UVLO bit will be set in the STATUS register. The backlight
will automatically start again when the voltage has increased above 2.5 V + 50 mV hysteresis. Hysteresis is
implemented to avoid continuously triggering undervoltage.
8.3.6.4 Thermal Shutdown
If the internal temperature reaches 150°C, the LP8555 will immediately shut down the backlight to protect it from
damage. The TSD bit will also be set in the STATUS register. The device will re-activate the backlight again
when the internal temperature drops below 137°C (typ).
8.3.6.5 Boost Overcurrent Protection
The LP8555 will automatically limit boost current to 3.1 A (EPROM programmable). When the 3.1-A limit is
reached the BST_OCP bit is set in the STATUS register.
8.3.6.6 Boost Overvoltage Protection
The LP8555 will automatically limit boost voltage to VBOOST_MAX+1.6 V. When the limit is reached the
BST_OVP bit is set in the STATUS register. It is possible to set the limit to four threshold levels programmable
via EPROM bits.
8.3.6.7 Boost Undervoltage Protection
The LP8555 can detect when the boost voltage is below VBOOST – 2.5 V for longer than 6ms. When the
threshold is reached the BST_UV bit is set in the STATUS register.
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8.3.7 I2C-Compatible Serial Bus Interface
8.3.7.1 Interface Bus Overview
The I2C compatible synchronous serial interface provides access to the programmable functions and registers on
the device. This protocol use a two-wire interface for bi-directional communications between the IC’s connected
to the bus. The two interface lines are the Serial Data Line (FSET/SDA), and the Serial Clock Line (ISET/SCL).
These lines should be connected to a positive supply, via a pull-up resistor and remain HIGH even when the bus
is idle.
Every device on the bus is assigned a unique address and acts as either a Master or a Slave depending on
whether it generates or receives the serial clock (ISET/SCL). The LP8555 is always a slave device.
See the LP8555EVM User Guide for full register map details and programming considerations.
8.3.7.2 Data Transactions
One data bit is transferred during each clock pulse. Data is sampled during the high state of the serial clock
(SCL). Consequently, throughout the clock’s high period, the data should remain stable. Any changes on the
SDA line during the high state of the SCL and in the middle of a transaction, aborts the current transaction. New
data should be sent during the low SCL state. This protocol permits a single data line to transfer both
command/control information and data using the synchronous serial clock.
SDA
SCL
Data Line
Stable:
Data Valid
Change
of Data
Allowed
Figure 37. Bit Transfer
Each data transaction is composed of a Start Condition, a number of byte transfers (set by the software) and a
Stop Condition to terminate the transaction. Every byte written to the SDA bus must be 8 bits long and is
transferred with the most significant bit first. After each byte, an Acknowledge signal must follow. The following
sections provide further details of this process.
Data Output
by
Transmitter
Transmitter Stays Off the
Bus During the
Acknowledgment Clock
Data Output
by
Receiver
Acknowledgment
Signal From Receiver
SCL
1
2
3-6
7
8
9
S
Start
Condition
Figure 38. Start And Stop
The Master device on the bus always generates the Start and Stop Conditions (control codes). After a Start
Condition is generated, the bus is considered busy and it retains this status until a certain time after a Stop
Condition is generated. A high-to-low transition of the data line (SDA) while the clock (SCL) is high indicates a
Start Condition. A low-to-high transition of the SDA line while the SCL is high indicates a Stop Condition.
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SDA
SCL
S
P
Start
Condition
Stop
Condition
Figure 39. Start And Stop Conditions
In addition to the first Start Condition, a repeated Start Condition can be generated in the middle of a transaction.
This allows another device to be accessed, or a register read cycle.
8.3.7.3 Acknowledge Cycle
The Acknowledge Cycle consists of two signals: the acknowledge clock pulse the master sends with each byte
transferred, and the acknowledge signal sent by the receiving device.
The master generates the acknowledge clock pulse on the ninth clock pulse of the byte transfer. The transmitter
releases the SDA line (permits it to go high) to allow the receiver to send the acknowledge signal. The receiver
must pull down the SDA line during the acknowledge clock pulse and ensure that SDA remains low during the
high period of the clock pulse, thus signaling the correct reception of the last data byte and its readiness to
receive the next byte.
8.3.7.4 “Acknowledge After Every Byte” Rule
The master generates an acknowledge clock pulse after each byte transfer. The receiver sends an acknowledge
signal after every byte received.
There is one exception to the “acknowledge after every byte” rule. When the master is the receiver, it must
indicate to the transmitter an end of data by not-acknowledging (“negative acknowledge”) the last byte clocked
out of the slave. This “negative acknowledge” still includes the acknowledge clock pulse (generated by the
master), but the SDA line is not pulled down.
8.3.7.5 Addressing Transfer Formats
Each device on the bus has a unique slave address. The LP8555 operates as a slave device with 7-bit address
combined with data direction bit. Slave address is 2Ch as 7-bit or 58h for write, and 59h for read in an 8-bit
format.
Before any data is transmitted, the master transmits the address of the slave being addressed. The slave device
should send an acknowledge signal on the SDA line, once it recognizes its address. The slave address is the
first seven bits after a Start Condition. The direction of the data transfer (R/W) depends on the bit sent after the
slave address — the eighth bit.
When the slave address is sent, each device in the system compares this slave address with its own. If there is a
match, the device considers itself addressed and sends an acknowledge signal. Depending upon the state of the
R/W bit (1:read, 0:write), the device acts as a transmitter or a receiver.
MSB
LSB
ADR6
Bit7
ADR5
bit6
ADR4
bit5
ADR3
bit4
ADR2
bit3
ADR1
bit2
ADR0
bit1
x
x
x
x
x
x
x
R/W
bit0
2
I C SLAVE address (chip address)
Figure 40. I2C Slave Address
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8.3.7.6 Control Register Write Cycle
• Master device generates start condition.
• Master device sends slave address (7 bits) and the data direction bit (r/w = 0).
• Slave device sends acknowledge signal if the slave address is correct.
• Master sends control register address (8 bits).
• Slave sends acknowledge signal.
• Master sends data byte to be written to the addressed register.
• Slave sends acknowledge signal.
• If master will send further data bytes, the control register address will be incremented by one after
acknowledge signal.
• Write cycle ends when the master creates stop condition.
8.3.7.7 Control Register Read Cycle
• Master device generates a start condition.
• Master device sends slave address (7 bits) and the data direction bit (r/w = 0).
• Slave device sends acknowledge signal if the slave address is correct.
• Master sends control register address (8 bits).
• Slave sends acknowledge signal.
• Master device generates repeated start condition.
• Master sends the slave address (7 bits) and the data direction bit (r/w = 1).
• Slave sends acknowledge signal if the slave address is correct.
• Slave sends data byte from addressed register.
• If the master device sends acknowledge signal, the control register address will be incremented by one. Slave
device sends data byte from addressed register.
• Read cycle ends when the master does not generate acknowledge signal after data byte and generates stop
condition.
ADDRESS MODE
Data Read
<Start Condition>
<Slave Address><r/w = '0'>[Ack]
<Register Addr.>[Ack]
<Repeated Start Condition>
<Slave Address><r/w = '1'>[Ack]
[Register Data]<Ack or Nack>...additional reads from subsequent register address possible
<Stop Condition>
Data Write
<Start Condition>
<Slave Address><r/w = '0'>[Ack]
<Register Addr.>[Ack]
<Register Data>[Ack]...additional writes to subsequent register address possible
<Stop Condition>
<> Data from master; [ ] Data from slave.
S
Slave Address
(7 bits)
'0' A
R/W
From Slave to Master
From Master to Slave
Control Register Add.
A
(8 bits)
Register Data
(8 bits)
A P
Data transfered,
byte + Ack
A - ACKNOWLEDGE (SDA Low)
S - START CONDITION
P - STOP CONDITION
Figure 41. Register Write Format
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S
Slave Address
(7 bits)
'0' A
Control Register Add.
A Sr
(8 bits)
Slave Address
(7 bits)
R/W
'1' A
Data- Data
(8 bits)
A/
P
NA
Data transfered, byte +
Ack/NAck
R/W
Direction of the transfer
will change at this point
From Slave to Master
A - ACKNOWLEDGE (SDA Low)
NA - ACKNOWLEDGE (SDA High)
From Master to Slave
S - START CONDITION
Sr - REPEATED START CONDITION
P - STOP CONDITION
Figure 42. Register Read Format
8.4 Device Functional Modes
8.4.1 Operation Without I2C Control
The device can operate without I2C control in applications where I2C bus is not available. Special EPROM
configuration is needed for this setup. In this mode the EN/VDDIO terminal enables the device, and PWM input
duty cycle adjusts the brightness. Slopes, PSPWM modes, different boost modes etc. are predefined in the
EPROM which device loads at start-up. FSET/SDA and ISET/SCL terminals can be used to set the PWM
frequency and LED current based on specific needs (see corresponding sections for setting the frequency and
current), without needing separate EPROM configuration for each application. The backlight start-up happens
when EN/VDDIO terminal is high and PWM input receives measurable duty cycle. If the PWMSB bit is set 1 in
EPROM, the device enters standby mode automatically when PWM/INT is set low. If PWMSB is 0, the device is
shut down setting EN/VDDIO low. See start-up and shutdown diagrams for more details.
8.4.2 Operation With I2C Control
With I2C control, user may set the device configuration more freely and have additional I2C brightness control.
The backlight brightness can be controlled with either PWM input, with I2C, or a combination of both.
Configuration for slopes, PSPWM, or different boost modes can be used from EPROM defaults, or user can set
own configuration before backlight is turned on. Configuration setting is done when EN/VDDIO is high (I2C is
active) and the ON bit is low. RFSET and RISET resistors cannot be used in I2C control mode, because they are
multiplexed as the I2C bus terminals (SDA/SCL). The backlight is started by setting the ON bit high, and
shutdown is done by setting ON bit low. See start-up and shutdown diagrams for more details. Details of the I2C
registers and programming considerations are seen in the LP8555EVM User Guide.
8.4.3 Shutdown Mode
The device is in shutdown mode when the EN/VDDIO terminal is low. the EN/VDDIO terminal enables an LDO,
which is used for powering internal logic and analog blocks. Current consumption in this mode from VDD terminal
is <1 µA.
8.4.4 Standby Mode
In standby mode the EN/VDDIO terminal is set high (with VDD power present), and logic is powered from an
LDO. The device goes through the start-up sequence where NVM (EPROM) is loaded to the registers. I2C is
available in standby mode, and register settings can be changed. Current consumption is < 30 µA in this mode
from VDD terminal.
8.4.5 Active Mode
In active mode the backlight is enabled either with setting the ON register bit high (I2C control mode) or by
activating PWM input. The EN/VDDIO terminal must be high, and VDD must be present. Brightness is controlled
with I2C writes to brightness registers or by changing PWM input duty cycle (operation without I2C control).
Configuration registers are not accessible in Active mode to prevent damage to the device by accidental writes.
Current consumption from VDD terminal in this mode is typically 4.2 mA when LEDs are not drawing any current.
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8.5 Register Maps
30
Register
Addr
D7
COMMAND
00h
RESET
D6
D5
D4
STATUS
01h
LED_OPEN
LED_OV
BST_UV
MASK
02h
LED_OPEN
LED_OV
BST_UV
BRTLO
03h
BRTHI
04h
D3
D2
D1
D0
SREN
SSEN
ON
BST_OVP
BST_OCP
TSD
UVLO
BST_OVP
BST_OCP
TSD
UVLO
RELOAD
AUTO
BRT[3:0]
BRT[11:4]
CONFIG
10h
PWMSB
CURRENT
11h
ISET
PGEN
12h
PFSET
PWMFILT
EN_BPHASE180
BRTMODE
MAXCURR
THRESHOLD
BOOST
13h
LEDEN_0
14h
OV
STEP
15h
SMOOTH
VOLTAGE_0
16h
VMAX_0
LEDEN_1
19h
PFREQ
BIND
PWM_IN_HYST
STEP
ADAPT_0
VINIT_0
ENABLE_1
VOLTAGE_1
1Ah
OPTION
1Ch
EXTRA
1Dh
ID
1Eh
ID_CUST
ID_CFG
REVISION
1Fh
MAJOR
MINOR
CONF0
76h
CONF1
77h
VHR0
78h
VHR1
79h
JUMP
7Ah
BFREQ
ENABLE_0
VMAX_1
ADAPT_1
VINIT_1
OPTION
EXTRA
BOOST_IS_
DIV2
ALTID
SRON
CURR_LIMIT
FMOD_DIV
VHR_SLOPE
VHR_VERT
VHR_HYST
JEN
VHR_HORZ
JTHR
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Some register fields are loaded from an internal EPROM (shaded above). This EPROM is programmed by TI
during final test. This allows default values to be assigned. This feature is intended for applications where the I2C
interface is not used. With the exception of the ID fields, all EPROM based fields can be written via I2C writes like
a normal register field. There are limitations on certain configuration bits, their operation and can they be
changed "on-the-fly". It is noted in the description of corresponding bit.
8.5.1 COMMAND
Address: 0x00
D7
D6
D5
RESET
D4
D3
—
D2
D1
D0
SREN
SSEN
ON
Bits
Field
Type
7
RESET
R/W
Description
6:3
reserved
R/O
2
SREN
R/W
0 = Slew rate limited disabled
1 = Enable slower boost gate drive slew rate. Reduces EMI energy in high frequencies and reduces
boost efficiency.
1
SSEN
R/W
0 = Spread Spectrum Scheme disabled
1 = Enable spread-spectrum boost clocking. Spreads EMI spectrum spikes.
0
ON
R/W
Turn on the backlight.
0 = backlight off
1 = backlight on
Write 1 to reset the device. This bit is self-cleaning and will always be 0 when read.
The COMMAND.ON bit must be programmed to 1 in the EPROM for applications without I2C access to the
device. The COMMAND.SSEN bit may be updated at any time. It is not necessary for the backlight to be off
when changing COMMAND.SSEN and/or COMMAND.SREN.
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8.5.2 STATUS/MASK
Address: 0x01/0x02
D7
D6
D5
D4
D3
D2
D1
D0
DRV_FAULT
DRV_OV
—
BST_UV
BST_OVP
BST_OCP
TSD
UVLO
Bits
Field
Type
Description
7
LED_OPEN
R/O
An open/short condition was detected on one or more LED strings. Once set this bit will stay set until the
STATUS register is read. An LED open/short condition will turn off the backlight when CONFIG.AUTO is
0.
6
LED_OV
R/O
An overvoltage condition was detected on one or more LED strings. Once set this bit will stay set until
the STATUS register is read.
5
reserved
R/O
4
BST_UV
R/O
The boost reported an undervoltage condition. Once set this bit will stay set until the STATUS register is
read.
3
BST_OVP
R/O
The boost reported an overvoltage protection condition when the maximum allowed voltage is
requested. Once set this bit will stay set until the STATUS register is read.
2
BST_OCP
R/O
The boost reported an undervoltage condition longer than 50 ms in time when the backlight on.
1
TSD
R/O
A thermal shutdown condition was detected. Once set this bit will stay set until the STATUS register is
read. A thermal shutdown condition will turn off the backlight.
0
UVLO
R/O
An undervoltage lockout condition was detected. Once set this bit will stay set until the STATUS register
is read. An undervoltage lockout condition will turn off the backlight.
Each fault bit of the STATUS register has a corresponding bit in the MASK register, which enables interrupts for
the fault. For example, an interrupt will occur if the MASK.BST_UV and STATUS.BST_UV bits are both set. If a
fault bit is cleared in the MASK register then that fault will not trigger an interrupt.
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8.5.3 BRTLO
Address: 0x03
D7
D6
D5
D4
D3
D2
BRT[3:0]
Bits
Field
Type
7:4
BRT[3:0]
R/W
3:0
reserved
R/O
D1
D0
D1
D0
RESERVED
Description
Least significant bits of the brightness level.
8.5.4 BTHI
Address: 0x04
D7
D6
D5
D4
D3
D2
BRT[11:4]
Bits
Field
Type
7:0
BRT[11:4]
R/W
Description
Most significant bits of the brightness level.
The brightness level can be updated with 8-bit precision or 12-bit precision. To make brightness level updates
effective the internal brightness level is only updated when the BRTHI register is written. If the BRTHI register is
written without a previous write to the BRTLO register, then the lower 4 bits of the internal 12-bit brightness will
be synthesized from the BRTHI register value.
BRTLO
BRTHI
Brightness
Comments
write 0x95
write 0xFC
0xFC9
BRTLO[3:0] is ignored
write 0x10
write 0xDC
0xDC1
set to an exact 12-bit value
no write
write 0x8C
0x8C8
synthesize low order bits
no write
write 0x0C
0x0C0
synthesize low order bits
no write
write 0x00
0x000
0% brightness
no write
write 0xFF
0xFFF
100% brightness
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8.5.5 CONFIG
Address: 0x10
D7
D6
PWMSB
PWMFILT
Bits
Field
D5
EN_BPHASE180
Type
D4
D3
RESERVED
RELOAD
D2
D1
AUTO
Description
7
PWMSB
R/W
Enables PWM standby mode
0 = CONTROL.ON alone turns the backlight on/off
1 = turn off the backlight after 50 ms of PWM low
6
PWMFILT
R/W
0 = PWM input filter disabled
1 = Enable 50 ns glitch filter on PWM input.
5
EN_BPHASE180
R/W
0 = Boosts operate in same phase
1 = Enable 180° phase shift between the 2 boost switchers.
4
reserved
R/O
3
RELOAD
R/W
Automatically re-read the EPROM at each turn-on.
0 = only read the EPROM upon power-up
1 = re-read the EPROM when the backlight turns on
2
AUTO
R/W
Automatic LED string configuration
0 = enable LED strings using just LEDEN.ENABLE
1 = disable all open LED strings
R/W
Brightness mode
00 = PWM
01 = BRTHI/BRTLO registers
10 = PWM × unshaped BRTHI/BRTLO registers
11 = BRTHI/BRTLO registers × unshaped PWM
1:0
BRTMODE
D0
BRTMODE
When the AUTO bit is set the LED configuration is done dynamically. When an OPEN/SHORT condition is
detected on an LED string it will be removed, and PWM output phasing will be adjusted. Conversely, an LED
string will be added back for operation if the LED string is not open.
The BRTMODE field selects how LED brightness is controlled. When BRTMODE is set to 00b the PWM/INT
terminal duty cycle controls the LED brightness. When BRTMODE is set to 01b the BRTLO and BRTHI registers
will control the LED brightness. When the backlight is turned on the brightness level is reset to 0% and will
automatically transition to the brightness value programmed in the BRTLO and BRTHI registers.
When the BRTMODE field is set to 00b, and the PWMSB bit is set to 1, the backlight will be turned off whenever
the PWM/INT terminal is held low for 50 ms. This will also put the device into its lowest power state. When the
PWM/INT terminal becomes active the backlight will automatically turn back on.
A 50 ns glitch filter will be applied to the PWM input signal when the PWMFILT bit is set to 1. When BRTMODE
is set to 10b or 11b the LED brightness is controlled by both the PWM/INT terminal duty cycle and the BRTLO
and BRTHI registers.
When BRTMODE is set to 10b the PWM/INT terminal duty cycle is routed through the smoothing function
(controlled via the STEP register). The smoothed duty cycle is multiplied with the value from the BRTLO/BRTHI
registers. Updates to the BRTLO/BRTHI registers have an immediate effect on the LED brightness, while
PWM/INT terminal duty cycle changes may be smoothed.
When BRTMODE is set to 11b the BRTLO/BRTHI register value is routed through the smoothing function. The
smoothed brightness level is multiplied with the PWM/INT terminal duty cycle. In this configuration PWM/INT
terminal duty cycle changes have an immediate effect on the LED brightness, while BRTLO/BRTHI register
changes may be smoothed.
34
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8.5.6 CURRENT
Address: 0x11
D7
D6
D5
ISET
Bits
Field
D3
D2
D0
Description
0 = LED maximum current set with MAXCURR bits
1 = Set MAXCURR via the ISET/SCL terminal. This terminal should only set to 1 as an EPROM default,
writing to this bit "on-the-fly" does not have effect. Resistor values and their corresponding LED current
setting is seen in Full-Scale LED Current section.
ISET
R/W
6:3
reserved
R/O
MAXCURR
D1
MAXCURR
Type
7
2:0
D4
—
R/W
Full-scale current, 100% brightness (typical).
000 = 5 mA
001 = 10 mA
010 = 15 mA
011 = 20 mA
100 = 23 mA
101 = 25 mA
110 = 30 mA
111 = 50 mA
The full-scale current can be configured into two different ways: EPROM or ISET/SCL terminal. The ISET/SCL
terminal resistor is automatically measured during start-up. The CURRENT.ISET bit is used to select between
the maximum current value measured from the ISET/SCL terminal and the EPROM value. When the ISET bit is
set to 1 the ISET/SCL terminal value is used; otherwise the EPROM value is used. Regardless of EPROM
programming, the maximum current can always be configured from I2C by clearing the CURRENT.ISET bit and
configuring the CURRENT.MAXCURR field as needed.
When the CURRENT register is read via I2C the MAXCURR field will contain the active full-scale current value.
To read the EPROM value the ISET bit must be set to 0. To read the RISET resistor value the ISET bit must be
set to 1 during start-up, which means it must be set in EPROM.
If the ISET/SCL terminal is grounded or floating the MAXCURR value will be set to 23 mA if ISET = 1.
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8.5.7 PGEN
Address: 0x12
D7
D6
PFSET
RESERVED
D5
D4
D3
D2
THRESHOLD
D1
D0
PFREQ
Bits
Field
Type
Description
7
PFSET
R/W
0 = PWM frequency is set with PFREQ register bits
1 = Set PFREQ via the FSET/SDA terminal. This bit should only be set to 1 as an EPROM default,
writing to this bit "on-the-fly" does not have effect. Resistor values and their corresponding frequency
settings are seen in Setting PWM Dimming Frequency section.
6
RESERVED
R/O
0
R/W
Adaptive dimming threshold. PWM dimming is used below the threshold and current dimming is used
above the threshold.
000 = 100% current dimming
101 = PWM below 25% (10-bit PWM)
111 = 100% PWM (12-bit PWM)
R/W
PWM output frequency (typical)
000 = 4.9 kHz
001 = 9.8 kHz
011 = 19.5 kHz
111 = 39.1 kHz
5:3
2:0
THRESHOLD
PFREQ
The output PWM frequency can be configured in two different ways: EPROM or FSET/SDA terminal. The
FSET/SDA terminal is always automatically measured. The PGEN.PFSET bit is used to select between the PWM
frequency value measured from the FSET/SDA terminal and the EPROM value. When the PFSET bit is set to 1
the FSET/SDA terminal value is used; otherwise the EPROM value is used. Regardless of EPROM
programming, the PWM frequency can always be configured from I2C by clearing the PGEN.PFSET bit and
configuring the PGEN.PFREQ field as needed.
Full 12-bit precision is achieved in all adaptive dimming thresholds and PWM output frequencies. When the
PGEN register is read via I2C the PFREQ field will contain the active PWM output frequency value. To read the
EPROM value the PFSET bit must be set to 0. To read the RFSET resistor value the PFSET bit must be set to 1.
If the FSET/SDA terminal is grounded or floating the PFREQ value will be set to 19.5 kHz.
36
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8.5.8 BOOST
Address: 0x13
D7
D6
D5
RESERVED
D4
D3
RESERVED
D2
RESERVED
D1
D0
BIND
BFREQ
Bits
Field
Type
7:6
RESERVED
R/W
Description
5:4
RESERVED
R/W
3:2
RESERVED
R/W
1
BIND
R/W
BIND bit is used to set boost inductor size.
0 = 4.7 µH … 6.8 µH
1 = 10 µH … 22 µH
0
BFREQ
R/W
Boost frequency (typical). This setting must be configured in EPROM, changing it with I2C register write
does not have desired effect.
0 = 500 kHz
1 = 1 MHz
8.5.9 LEDEN
Address: 0x14
D7
D6
D5
D4
OV
Bits
Field
D3
D2
D1
D0
ENABLE[6:1]
Type
Description
7:6
OV
R/W
Set LED overvoltage level (typical).
00 = 1V
01 = 2V
10 = 3V
11 = 4V
5:0
ENABLE
R/W
LED string enables for Bank A.
The ENABLE field configures the enabled LED strings. If the CONFIG.AUTO bit is 0 these LED strings will stay
active when the backlight is on. If the CONFIG.AUTO bit is set, then an LED open/short condition will cause that
LED string to be removed. A given LED string will never be enabled if the corresponding bit of the ENABLE field
is set to 0. The OV field configures the threshold for detecting an LED overvoltage condition; which may occur
when one or more LEDs are bypassed (shorted) within an LED string.
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8.5.10 STEP
Address: 0x15
D7
D6
D5
D4
SMOOTH
Bits
7:6
5:2
Field
Type
SMOOTH
PWM_IN_HYST
2:0
D3
D2
D1
PWM_IN_HYST
STEP
D0
STEP
Description
R/W
Advanced Slope control. Filter strength for digital smoothing filter.
00 = no smoothing
01 = light smoothing
10 = medium smoothing
11 = heavy smoothing
R/W
PWM input hysteresis
000 = None
001 = >1 LSB steps
010 = >2 LSB steps
011 = >4 LSB steps
100 = >8 LSB steps
101 = >16 LSB steps
110 = >32 LSB steps
111 = >64 LSB steps
R/W
Linear Sloping time (typical)
000 = 0 ms
001 = 8 ms
010 = 16 ms
011 = 24 ms
100 = 28 ms
101 = 32 ms (12.2 µs / 12-bit LSB)
110 = 100 ms (24.4 µs / 12-bit LSB)
111 = 200 ms (48.8 µs / 12-bit LSB)
The STEP field controls the rate of brightness level changes. Brightness transitions have a fixed step time. The
time required to complete a ramp between two levels is independent upon the difference between the starting
and ending current levels. For example, when STEP is set to 110b a brightness transition between any
brightness values will take 100 ms. The SMOOTH field controls the digital smoothing filter, Advanced Sloping.
This filter behaves much like an RC filter. It can be used to remove the overshoot that appears to occur (for eye)
on large brightness changes. The actual amount of smoothing is tailored for the STEP field setting. For example
medium filter strength is higher for 100 ms ramp times than for 32 ms Linear Sloping times. This gives 32
possible brightness level ramping configurations.
The PWM detector over-samples the input PWM signal at 20 MHz. The accuracy of the duty-cycle measurement
depends upon the frequency of the PWM signal. The maximum possible accuracy is 12-bit precision. To allow
12-bit precision the LP8555 must take at least 8192 samples.
20 MHz
2.44 KHz
0
2.4 kHz
12-bit
4.8 kHz
11-bit
C
8192 samples
9.6 kHz
10-bit
19.5 kHz
9-bit
39 kHz
8-bit
78 kHz
7-bit
156 kHz
6-bit
When the PWM detector detects new PWM-value, it is effective only when it differs from previous value more
than selected hysteresis. Hysteresis is selected with PWM_IN_HYST in register 0x15.
38
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8.5.11 Brightness Transitions, Typical Times
STEP
SMOOTH
RAMP TIME
(0 to 100%) (ms)
000
00
0.0
000
01
0.9
000
10
1.7
000
11
3.4
001
00
8.2
001
01
14.6
001
10
22.3
001
11
38.7
010
00
16.0
010
01
28.4
010
10
43.5
010
11
75.5
011
00
24.2
011
01
42.9
011
10
65.8
011
11
114.2
100
00
27.9
100
01
49.5
100
10
75.8
100
11
131.7
101
00
32.0
101
01
56.8
101
10
87.0
101
11
151.1
110
00
102.0
110
01
181.0
110
10
277.2
110
11
481.5
111
00
204.8
111
01
363.4
111
10
556.6
111
11
966.9
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8.5.12 VOLTAGE_0
Address: 0x16
D7
D6
D5
VMAX
Bits
D4
D3
D2
ADAPT
Field
D1
D0
VINIT
Type
Description
7:6
VMAX
R/W
Maximum boost voltage for Boost A (typical).
00 = 18V
01 = 22V
10 = 25V
11 = 28V
5
ADAPT
R/W
Enable adaptive headroom optimization.
4:0
VINIT
R/W
Initial boost voltage. When ADAPT is 0 the boost voltage will remain at the VINIT setting. The voltage
range is from 7V to 28V; where 0x00 equals 7V and 0x3F equals 28V (typical).
The VOLTAGE_0.VMAX bit sets the maximum allowed boost voltage for Boost A. The boost control loop will
never request a higher voltage than the VMAX value. When the VOLTAGE.ADAPT bit is set to 1 the boost
voltage may vary from 7V to the VMAX configured voltage.
VINIT (DEC)
Voltage (V)
VINIT (DEC)
Voltage (V)
VINIT (DEC)
Voltage (V)
0
7.00
11
14.45
22
21.91
1
7.68
12
15.13
23
22.58
2
8.35
13
15.8
24
23.26
3
9.03
14
16.48
25
23.94
4
9.71
15
17.16
26
24.61
5
10.39
16
17.84
27
25.29
6
11.06
17
18.52
28
25.97
7
11.74
18
19.2
29
26.65
8
12.42
19
19.87
30
27.32
9
13.09
20
20.55
31
28.00
10
13.77
21
21.23
Example: For system where is 7 LEDs in series with 2.9 V Vf. Target value for boost initial voltage would be: 7 x
(2.9 V + 0.1 V) + 2 V = 23 V → VINIT = 24(DEC). 0.1 V represents Vf variation of single LED, and 2 V is worst
case headroom. So it is desirable to set the initial voltage little higher than the actual Vf voltage to take the worstcase condition in consideration.
40
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8.5.13 LEDEN1
Address: 0x19
D7
D6
D5
D4
D3
RESERVED
D2
D1
D0
ENABLE[6:1]
Bits
Field
Type
7:6
RESERVED
R/O
5:0
ENABLE1
R/W
Description
LED string enables for Bank B.
The ENABLE field configures the enabled LED strings. If the CONFIG.AUTO bit is 0 these LED strings will stay
active when the backlight is on. If the CONFIG.AUTO bit is set, then an LED open/short condition will cause that
LED string to be removed. A given LED string will never be enabled if the corresponding bit of the ENABLE field
is set to 0. The OV field configures the threshold for detecting an LED overvoltage condition; which may occur
when one or more LEDs are bypassed (shorted) within an LED string.
8.5.14 VOLTAGE1
Address: 0x1A
D7
D6
D5
VMAX1
Bits
D4
D3
D2
ADAPT1
Field
D1
D0
VINIT1
Type
Description
7:6
VMAX
R/W
Maximum boost voltage for Boost B (typical).
00 = 18 V
01 = 22 V
10 = 25 V
11 = 28 V
5
ADAPT
R/W
Enable adaptive headroom optimization.
4:0
VINIT1
R/W
Initial boost voltage. When ADAPT is 0 the boost voltage will remain at the VINIT setting. The voltage
range is from 7 V to 28 V; where 0x00 equals 7 V and 0x3F equals 28 V (typical).
The VOLTAGE1.VMAX bit sets the maximum allowed boost voltage for Boost B. The boost control loop will
never request a higher voltage than the VMAX value. When the VOLTAGE.ADAPT bit is set to 1 the boost
voltage may vary from 7 V to the VMAX configured voltage.
VINIT (DEC)
VOLTAGE (V)
VINIT (DEC)
VOLTAGE (V)
VINIT (DEC)
VOLTAGE (V)
0
7.00
11
14.45
22
21.91
1
7.68
12
15.13
23
22.58
2
8.35
13
15.8
24
23.26
3
9.03
14
16.48
25
23.94
4
9.71
15
17.16
26
24.61
5
10.39
16
17.84
27
25.29
6
11.06
17
18.52
28
25.97
7
11.74
18
19.2
29
26.65
8
12.42
19
19.87
30
27.32
9
13.09
20
20.55
31
28.00
10
13.77
21
21.23
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8.5.15 OPTION
Address: 0x1C
D7
D6
D5
D4
D3
D2
RESERVED
Bits
Field
Type
7:4
reserved
R/O
3:0
OPTION
R/O
D1
D0
D1
D0
D1
D0
D1
D0
OPTION
Description
Metal option identifier.
8.5.16 EXTRA
Address: 0x1D
D7
D6
D5
D4
D3
D2
EXTRA
Bits
Field
Type
7:0
EXTRA
R/W
Description
User accessible extra identifier register
8.5.17 ID
Address: 0x0E
D7
D6
D5
D4
D3
D2
ID_CUST
ID_CFG
Bits
Field
Type
7:4
ID_CUST
R/W
TI Customer ID code.
Description
3:0
ID_CFG
R/W
TI Configuration ID code.
The ID field is configured by TI when the EPROM is programmed.
8.5.18 REVISION
Address: 0x0F
D7
D6
D5
D4
D3
D2
MAJOR
MINOR
Bits
Field
Type
Description
7:4
MAJOR
R/O
Major silicon revision.
3:0
MINOR
R/O
Minor silicon revision.
The REVISION register provides silicon revision information in case test SW needs to distinguish between
different revisions of the device or later identification is needed. REVISION register content comes from read only
metal register (connected at COM level).
42
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8.5.19 CONF0
Address: 0x76
D7
D6
BOOST_IS_DIV2
D5
D4
RESERVED
D3
ALTID
D2
D1
SRON
D0
CURR_LIMIT
Bits
Field
Type
7
BOOST_IS_DIV2
R/W
6:5
RESERVED
R/W
4
ALTID
R/W
I2C Slave ID selector
0 = 2Ch
1 = 2Eh
3:2
SRON
R/W
Slowed boost slew rate. When COMMAND.SREN is set to 1 boost slew rate is controlled with this
value.
R/W
Boost inductor peak current limit (typical). BOOST_IS_DIV2 sets which of the limits is used.
00 = 0.9 A / 1.55 A
01 = 1.2 A / 2.1 A
10 = 1.5 A / 2.6 A
11 = 1.8 A / 3.1 A
1:0
CURR_LIMIT
Description
Divide inductor peak current by 2
0 = Normal operation
1 = Inductor currents divided by 2
8.5.20 CONF1
Address: 0x77
D7
D6
D5
FMOD_DIV
Bits
Field
D4
D3
RESERVED
Type
7:6
FMOD_DIV
R/W
5:0
RESERVED
R/W
D2
D1
RESERVED
D0
RESERVED
Description
Spread spectrum modulation frequency divisor.
00 = 0.45%
01 = 0.27%
10 = 0.17%
11 = 0.12%
The FMOD_DIV field controls modulation frequency for spread spectrum clocking. The actual modulation
frequency scales with the boost frequency.
BOOST FREQUENCY (kHz)
FMOD_DIV = 00b (kHz)
FMOD_DIV = 01b
(kHz)
FMOD_DIV = 10b (kHz)
FMOD_DIV = 11b
(kHz)
1000
4.17
2.78
1.67
1.19
500
2.08
1.39
0.83
0.64
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8.5.21 VHR0
Address: 0x78
D7
D6
D5
RESERVED
Bits
Field
Type
7
RESERVED
R/O
6:4
VHR_SLOPE
3
RESERVED
2:0
D4
VHR_SLOPE
VHR_VERT
D3
D2
RESERVED
D1
D0
VHR_VERT
Description
R/W
Typical headroom voltage at maximum current (50 mA)
000 = 210 mV
001 = 223 mV
010 = 235 mV
011 = 248 mV
100 = 260 mV
101 = 273 mV
110 = 285 mV
111 = 300 mV
R/W
Typical minimum headroom voltage
000 = 50 mV
001 = 80 mV
010 = 110 mV
011 = 140 mV
100 = 170 mV
101 = 200 mV
110 = 230 mV
111 = 260 mV
8.5.22 VHR1
Address: 0x79
D7
D6
D5
RESERVED
VHR_HYST
Bits
Field
Type
7:6
RESERVED
R/O
5:4
VHR_HYST
R/W
3:2
RESERVED
R/O
1:0
44
VHR_HORZ
D4
R/W
D3
D2
RESERVED
D1
D0
VHR_HORZ
Description
Typical hysteresis for the mid comparator threshold (above the low comparator threshold).
00 = 200 mV
01 = 233 mV
10 = 466 mV
11 = 600 mV
Percentage of full driver range (horizontal component)
00 = 1%
01 = 25%
10 = 37.5%
11 = 50%
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8.5.23 JUMP
Address: 0x7A
D7
D6
D5
JEN
Bits
Field
Type
7
JEN
R/W
6:4
RESERVED
R/W
3:2
1:0
D4
D3
D2
RESERVED
JTHR
JVOLT
D1
JTHR
D0
JVOLT
Description
Enable boost voltage jumping on large brightness percentage increases.
R/W
Jump brightness percentage threshold.
00 = 6.25%
01 = 12.5%
10 = 25%
11 = 50%
R/W
Typical Boost voltage jump size (10.26 mV/step)
00 = 195 steps (2 V)
01 = 390 steps (4 V)
10 = 585 steps (6 V)
11 = 780 steps (8 V)
The jump feature operates outside of the normal adaptive headroom loop. Whenever the brightness percentage
instantaneously increases above the configured threshold the boost voltage is instructed to immediately jump up.
This can be used in some rare cases where extremely fast boost reaction time to brightness changes is needed.
The JTHR field configures the threshold and the JVOLT field configures the voltage increase. The requested
boost voltage will never exceed the value set by the VOLTAGE.VMAX field.
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9 Application and Implementation
9.1 Application Information
The LP8555 designed for LCD backlighting, especially for high-resolution tablet panels where more backlight
power is needed due to smaller aperture ratio of the LCD. With single-boost configuration the inductor selection
is difficult for height restricted applications; to overcome this LP8555 uses dual-boost configuration. This shares
the total load to two boost inductors and allows using two smaller inductors instead of one large inductor while
maintaining good efficiency. 12 LED current sinks allow driving up to 96 LEDs with high efficiency. Better
efficiency is achieved with using lower conversion ratio for boost and driving more LEDs in parallel, compared to
using fewer LED strings and higher boost conversion ratio. Main limiting factor for output power is inductor
current limit, which is calculated in the Detailed Design Procedure. PCB thermal performance must be
considered in high power applications where thermal dissipation of LP8555 can become limiting factor.
Due to a flexible input voltage configuration, the LP8555 can be used also in various other applications, such as
laptop backlighting, as well as other LED lighting where high number of LEDs are needed and must be driven
with highest possible efficiency. The following design procedure can be used to select component values for the
LP8555. An example for default EPROM configuration is given with corresponding design parameters.
LP8555EVM User Guide has reference bill of materials and example layout pictures.
9.2 Typical Applications
9.2.1 Application for Default LP8555YFQR EPROM Configuration
With the default EPROM configuration PWM input is used for brightness control. The backlight is
enabled/disabled and also configuration can be changed before backlight turning on with I2C writes. Up to 12
LED strings can be used with max 28-V boost output voltage. LED current is set to 25 mA by default. See
detailed EPROM setup in LP8555YFQR EPROM Configuration.
9.2.1.1 Schematic
L1
VBATT
2.7V ± 4.5V
(Single Li-Ion Cell)
7 - 28V
4.7 ± 6.8µH
10µF
CIN_A
CVDD
1µF
CVLDO
D1
SW_A
VDD
VOUT_A
2 x 4.7 PF
COUT_A
FB_A
39 pF
LCD Display
VLDO
10µF
LEDA1
LP8555
EN
SDA
Brightness Control
PWM input only
LEDA4
EN/VDDIO
RPULL-UP
SCL
ISET/SCL
PWM/INT
LED
Current up
to 25mA /
string
LEDA5
FSET/SDA
PWM
LED
Current up
to 25mA /
string
LED BANK B
LEDA3
LED BANK A
LEDA2
LEDA6
LEDB1
LEDB2
LEDB3
LEDB4
LEDB5
LEDB6
FB_B
SW_B
GNDs
39 pF
VOUT_B
L2
VBATT
2.7V ± 4.5V
CIN_B
10µF
4.7 ± 6.8µH
D2
COUT_B
2 x 4.7 PF
7 - 28V
Figure 43. Application Diagram for Default EPROM Setup
46
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Typical Applications (continued)
9.2.1.2 LP8555YFQR EPROM Configuration
ADDRESS
(HEX)
BIT
00
10
BIT NAME
BIT DESCRIPTION
2
SREN
Boost slew rate limit enable
0b
0 = Boost slew rate not limited
1
SSEN
Spread spectrum enable
0b
0 = Spread spectrum disabled
0
ON
Backlight enable
0b
0 = Backlight enabled only by writing
this bit to 1
7
PWMSB
Enable automatic PWM input shutdown
0b
0 = Shutdown function disabled
6
PWMFILT
Enable PWM input filtering
1b
1 = PWM input analog 50 ns filter
enabled
5
EN_BPHASE180
Enable boost 180° phase difference
1b
1 = Boosts clocks are 180° shifted
4
-
3
RELOAD
Enable EPROM read at every BL enable
sequence
0b
0 = EPROM is read only at first startup
2
AUTO
Enable auto detect for number of LEDs
during start-up
1b
1 = LED string auto detection
enabled
BRTMODE
Brightness control mode
00b
00 = PWM input duty control only
ISET
Enable external resistor setting of LED
string current
0b
0 = LED current set with registers
1:0
11
12
13
14
15
16
7
VALUE
MEANING
REG VALUE
(HEX)
00
64
0b
6:3
-
2:0
MAXCURR
Set maximum DC current per string
7
PFSET
Enable external resistor PWM frequency
setting
0b
6
-
05
0000b
101b
101 = 25 mA
0 = PWM frequency selected with
registers
2B
0b
5:3
THRESHOLD
Hybrid PMW and Current Control switch
point control
101b
101 = 25% switch point
2:0
PFSET
PWM frequency selection
011b
011 = 19.5 kHz
7
-
0b
6
-
0b
5:2
-
01
0000b
1
BIND
Boost inductor selection
0b
0 = 4.7 µH ... 6.8 µH inductor
0
BFREQ
Boost SW frequency
1b
1 = 1 MHz
7:6
OV
Set LED high comparator detection level
10b
10 = 3 V
5:0
ENABLE_0
LED bank A string enable
7:6
SMOOTH
Advanced Sloping smoothing factor
00b
00 = No smoothing
5:3
PWM_IN_HYST
PWM input hysteresis
100b
100 = >8 LSB steps
2:0
STEP
Linear Slope time
000b
000 = 0ms
7:6
VMAX_0
Bank A boost maximum voltage
11b
11 = 28 V
5
ADAPT_0
Enable boost adaptive control for bank A
1b
1 = Adaptive headroom enabled
111111b
BF
1 = Enabled (all six strings)
20
F8
4:0
VINIT_0
Initial voltage for bank A boost
11000b
11000 = 23.26 V
19
5:0
ENABLE_1
LED bank B string enable
111111b
1 = Enabled (all six strings)
3F
1A
7
VMAX_1
Bank B boost maximum voltage
11b
11 = 28 V
F8
6
ADAPT_1
Enable boost adaptive control for bank B
1b
1 = Adaptive headroom enabled
5
VINIT_1
Initial voltage for bank B boost
11000b
11000 = 23.26 V
7:4
ID_CUST
ID register, Customer ID
0000b
0000
3:0
ID_CFG
ID register, EPROM config
0000b
0000
BOOST_IS_DIV2
Option divide Imax peak current by 2
1E
76
7
6:5
-
0b
00
0 = Normal current limit
0B
00b
4
ALTID
I2C slave ID selector
0b
0 = 2Ch (7-bit)
3:2
SRON
Slowed boost slew rate
10b
When COMMAND.SREN is set to 1
this value is used.
10 = Second slowest
1:0
CURR_LIMIT
Inductor peak current limit
11b
11 = 3.1 A
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Typical Applications (continued)
ADDRESS
(HEX)
BIT
BIT NAME
BIT DESCRIPTION
77
7:6
FMOD_DIV
Spread spectrum modulation frequency
divisor
5:0
-
6:4
VHR_SLOPE
78
3
79
7A
VALUE
00b
MEANING
REG VALUE
(HEX)
When COMMAND.SSEN is set to 1
this value is used.
00 = 0.42%
17
110 = 285 mV
60
010111b
LED driver maximum headroom voltage at
maximum current (50mA)
110b
-
0b
2:0
VHR_VERT
LED driver maximum headroom voltage at
minimum current
000b
000 = 50 mV
5:4
VHR_HYST
LED driver hysteresis for mid comparator
level
01b
01 = 233 mV
3:2
-
1:0
VHR_HORZ
LED driver headroom control knee
percentage of full LED current
01b
01 = 25%
JEN
Enable boost voltage jumping on
brightness change
1b
1 = Jump enabled
7
11
00b
6:4
-
3:2
JTHR
Jump brightness threshold
10b
10 = 25%
1:0
JVOLT
Jump voltage
00b
00 = 2 V
88
000b
9.2.1.3 Design Requirements
Example requirements based on default EPROM setup.
48
DESIGN PARAMETER
EXAMPLE VALUE
Input voltage range
2.7 V to 4.5 V (Single Li-Ion cell battery)
Brightness Control
PWM input duty cycle
Backlight enabled
Writing ON bit 1 with I2C
PWM output frequency
19.2 kHz with PSPWM enabled
LED Current
25 mA / channel
Number of Channels
Up to 12 with string auto detection enabled
Brightness slopes
Disabled
External set resistors
Disabled
Inductor
4.7 µH to 6.8 µH, at least 3.1-A saturation current
Boost SW frequency
1 MHz
Maximum output voltage
28 V
SW current limit
3.1 A
CABC
Jump enabled for >25% brightness changes
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9.2.1.4 Detailed Design Procedure
9.2.1.4.1 Inductor
There are two main considerations when choosing an inductor; the inductor should not saturate, and the inductor
current ripple should be small enough to achieve the desired output voltage ripple. Different saturation current
rating specifications are followed by different manufacturers so attention must be given to details. Saturation
current ratings are typically specified at 25°C. However, ratings at the maximum ambient temperature of
application should be requested from the manufacturer. Shielded inductors radiate less noise and should be
preferred.
The saturation current should be greater than the sum of the maximum load current and the worst case average
to peak inductor current.
Figure 44 shows the worst case conditions.
IOUTMAX
ISAT >
'¶
+ IRIPPLE
VIN
(VOUT ± VIN)
x
Where IRIPPLE =
VOUT
(2 x L x f)
(VOUT ± VIN)
DQG'¶= (1 - D)
Where D =
(VOUT)
Figure 44. Calculating Inductor Maximum Current
•
•
•
•
•
•
•
•
IRIPPLE: peak inductor current
IOUTMAX: maximum load current
VIN: minimum input voltage in application
L : min inductor value including worst case tolerances
f : minimum switching frequency
VOUT: output voltage
D: Duty Cycle for CCM Operation
VOUT : Output Voltage
As a result the inductor should be selected according to the ISAT. A more conservative and recommended
approach is to choose an inductor that has a saturation current rating greater than the maximum current limit of
3.1 A. A 4.7-µH to 6.8-µH inductor with a saturation current rating of at least 3.1 A is recommended for most
applications. The inductor’s resistance should be less than 300 mΩ for good efficiency.
9.2.1.4.2 Output Capacitor
A ceramic capacitor with 50-V voltage rating is recommended for the output capacitor. The DC-bias effect can
reduce the effective capacitance by up to 80% especially with small package size capacitors, which needs to be
considered in capacitance value and package selection. Typically one 10-µF or two 4.7-µF capacitors is
sufficient. Effectively the capacitance should be at least 2 µF at boost maximum output voltage.
9.2.1.4.3 LDO Capacitor
A ceramic capacitor with at least 10 V voltage rating is recommended for the output capacitor of the LDO. The
DC-bias effect can reduce the effective capacitance by up to 80%, which needs to be considered in capacitance
value selection. Typically 10 µF capacitor is sufficient.
9.2.1.4.4 VDD Capacitor
A ceramic capacitor with at least 10-V voltage rating is recommended for the VDD input capacitor. If input
voltage is higher, then the rating should be selected accordingly. The DC-bias effect can reduce the effective
capacitance by up to 80%, which needs to be considered in capacitance value selection. Typically, a 1-μF
capacitor is sufficient. X5R/X7R are recommended types.
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9.2.1.4.5 Boost Input Capacitor
A ceramic capacitor with at least 10-V voltage rating is recommended for the boost input capacitor. If input
voltage is higher, then the rating should be selected accordingly. The DC-bias effect can reduce the effective
capacitance by up to 80%, which needs to be considered in capacitance value selection. Typically, a 10-μF
capacitor per boost is sufficient. X5R/X7R are recommended types.
9.2.1.4.6 Diode
A Schottky diode should be used for the output diode. Peak repetitive current should be greater than inductor
peak current (3.1 A) to ensure reliable operation. Average current rating should be greater than the maximum
output current. Schottky diodes with a low forward drop and fast switching speeds are ideal for increasing
efficiency in portable applications. Choose a reverse breakdown voltage of the Schottky diode significantly larger
(~40 V) than the output voltage. Do not use ordinary rectifier diodes, since slow switching speeds and long
recovery times cause the efficiency and the load regulation to suffer.
9.2.1.5 Application Performance Plots
Typical performance plots with default EPROM configuration. The LP8555EVM was used for taking the
oscilloscope plots.
VDD = 3.7V
ILED = 25 mA
12 x 7 LEDs
2
Figure 45. Start-up Waveform with I C Write
Full Brightness Slope Function Disabled.
VDD = 3.7V
fSW = 1 MHz
VBOOST = 28V
Load = 150 mA
Figure 46. Typical Boost Waveform, Boost A
ƒPWM = 19.5 kHz
Figure 47. 180° Phase Difference Between Boost A and B
50
VDD = 3.7V
6 Strings
Figure 48. Typical LED Current and Voltage Waveforms.
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9.2.2 Application Example With Different LED Configuration for Each Bank
In the following example schematic it is shown how the LED banks can have different LED configuration. Bank A
has 4 active LED outputs and Bank B has 5 active LED outputs. LP8555 will automatically detect open outputs
and adjust phase shifting for both banks optimally. Control in this example is from I2C bus and PWM/INT terminal
is used for interrupt signal, notifying processor on possible fault conditions. Component selection and
performance plots follow the examples shown in first application example with default EPROM configuration, but
the PSPWM is adjusted based on the number of connected strings. Details on I2C registers and EPROM settings
are seen in the Register Map section. If custom EPROM is required, please contact TI Sales representative for
availability.
9.2.2.1 Schematic
L1
VBATT
2.7V ± 20V
D1
7 - 28V
1.3 ”9OUT / VIN ”10
CVDD
VOUT_A
CIN_A
CVLDO
COUT_A
SW_A
FB_A
VDD
LCD Display
VLDO
LED BANK A
LEDA1
LEDA2
LEDA3
LP8555
EN
SDA
EN/VDDIO
RPULL-UP
SCL
LEDA4
LEDA5
LEDA6
FSET/SDA
ISET/SCL
LEDB1
LED BANK B
PWM/INT
INT
LEDB2
VDDIO
RPULL-UP
LEDB3
LEDB4
LEDB5
LEDB6
FB_B
SW_B
GNDs
VOUT_B
VBATT
2.7V ± 20V
CIN_B
L2
D2
COUT_B
7 - 28V
1.3 ”9OUT / VIN ”10
Figure 49. Application Example With Different LED Configurations on Each Bank
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9.2.3 Application Example With 12 LED Strings and PWM Input Brightness Control
In the following example schematic it is shown how the LP8555 can be configured for operating without I2C
control. Only controls needed are PWM input for brightness control and EN for enabling and disabling device.
PWM frequency is set with RFSET resistor and LED current is set with ISET resistor. Full 12 channels are used in
this example, but other configurations can be used as well. Component selection and performance plots follow
the examples shown in first application example with default EPROM configuration. Details on I2C registers and
EPROM settings are seen in the Register Map section. If custom EPROM is required, please contact TI Sales
representative for availability. Since this configuration relies on pre-programmed EPROM for basic setup
(although LED current and PWM frequency are set with resistors), special EPROM configuration is needed for
this application.
9.2.3.1 Schematic
L1
VBATT
2.7V ± 20V
CVDD
CVLDO
D1
CIN_A
7 - 28V
1.3 ”9OUT / VIN ”10
COUT_A
VOUT_A
SW_A
VDD
FB_A
VLDO
LCD Display
LEDA1
LED BANK A
LEDA2
LEDA3
LP8555
EN
RFSET
RISET
PWM
LEDA4
EN/VDDIO
LEDA5
FSET/SDA
LEDA6
ISET/SCL
PWM/INT
LEDB1
LED BANK B
LEDB2
LEDB3
LEDB4
LEDB5
LEDB6
FB_B
SW_B
GNDs
VOUT_B
VBATT
2.7V ± 20V
CIN_B
L2
D2
COUT_B
7 - 28V
1.3 ”9OUT / VIN ”10
Figure 50. Application Example with 12 LED Strings and PWM Input Brightness Control
52
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9.2.4 Application With 12 LED Strings, I2C Brightness Control
In the following example full 12 channels are used with I2C brightness control. PWM/INT terminal is used for
interrupt signal, notifying processor on possible fault conditions. LED current and PWM frequency are set with
I2C writes, or default EPROM values can be used as well. Component selection and performance plots follow the
examples shown in first application example with default EPROM configuration. Configuration registers can be
set before backlight is enabled, so special pre-set EPROM is not necessarily needed. Details on I2C registers
and EPROM settings are seen in the Register Map section. If custom EPROM is required, please contact TI
Sales representative for availability.
9.2.4.1 Schematic
L1
VBATT
2.7V ± 20V
CVDD
CVLDO
D1
7 - 28V
1.3 ”9OUT / VIN ”10
VOUT_A
CIN_A
COUT_A
SW_A
FB_A
VDD
LCD Display
VLDO
LEDA1
LED BANK A
LEDA2
LEDA3
LP8555
EN/VDDIO
EN
SDA
RPULL-UP
LEDA4
LEDA5
LEDA6
FSET/SDA
ISET/SCL
SCL
PWM/INT
INT
LEDB1
VDDIO
LED BANK B
LEDB2
RPULL-UP
LEDB3
LEDB4
LEDB5
LEDB6
FB_B
SW_B
GNDs
VOUT_B
VBATT
2.7V ± 20V
CIN_B
L2
D2
COUT_B
7 - 28V
1.3 ”9OUT / VIN ”10
Figure 51. Application Example With 12 LED Strings, I2C Brightness Control
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10 Power Supply Recommendations
The device is designed to operate from an input voltage supply range between 2.7 V and 20 V. This input supply
should be well regulated and able to withstand maximum input current and maintain stable voltage without
voltage drop even at load transition condition (start-up or rapid brightness change). The resistance of the input
supply rail should be low enough that the input current transient does not cause drop high enough in the LP8555
supply voltage that can cause false UVLO fault triggering.
If the input supply is located more than a few inches from the LP8555 additional bulk capacitance may be
required in addition to the ceramic bypass capacitors. Depending on device EPROM configuration and usage
case the boost converter is configured to operate optimally with certain input voltage range. Examples are seen
in the Detailed Design Procedures. In uncertain cases, it is recommended to contact TI Sales Representative for
confirmation of the compatibility of the use case, EPROM configuration and input voltage range.
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11 Layout
11.1 Layout Guidelines
In Layout Example is a layout recommendation for LP8555. The figure is used for demonstrating the principle of
good layout. This layout can be adapted to the actual application layout if/where possible.
It is important that all boost components are close to the chip and the high current traces should be wide enough.
By placing one boost component on one side of the chip it is easy to keep the ground plane intact below the high
current paths. This way other chip terminals can be routed more easily without splitting the ground plane. VDD
and VLDO need to be as noise-free as possible. Place the bypass capacitors near the corresponding terminals
and ground them to as noise-free ground as possible.
Here are some main points to help the PCB layout work:
• Current loops need to be minimized:
– For low frequency the minimal current loop can be achieved by placing the boost components as close to
the SW and SW_GND terminals as possible. Input and output capacitor grounds need to be close to each
other to minimize current loop size.
– Minimal current loops for high frequencies can be achieved by making sure that the ground plane is intact
under the current traces. High frequency return currents try to find route with minimum impedance, which
is the route with minimum loop area, not necessarily the shortest path. Minimum loop area is formed when
return current flows just under the “positive” current route in the ground plane, if the ground plane is intact
under the route. Traces from inner pads of the LP8555 need to be routed from below the part in the inner
layer so that traces do not split the ground plane under the boost traces or components.
• GND plane needs to be intact under the high current boost traces to provide shortest possible return path and
smallest possible current loops for high frequencies.
• Current loops when the boost switch is conducting and not conducting needs to be on the same direction in
optimal case.
• Inductor placement should be so that the current flows in the same direction as in the current loops. Rotating
inductor 180° changes current direction.
• Use separate power and noise free grounds. Power ground is used for boost converter return current and
noise free ground for more sensitive signals, like VDD and VLDO bypass capacitor grounding as well as
grounding the GND terminals of LP8555 itself.
• Boost output feedback voltage to LEDs need to be taken out “after” the output capacitors, not straight from
the diode cathode.
• A small (for example, 39 pF) bypass capacitor should be placed close to the FB terminal(s) to suppress high
frequency noise
• VDD line should be separated from the high current supply path to the boost converter(s) to prevent high
frequency ripple affecting the chip behavior. A separate 1-µF bypass capacitor is used for the VDD terminal,
and it is grounded to noise-free ground.
• Input and output capacitors need strong grounding (wide traces, many vias to GND plane)
• If two output capacitors are used they need symmetrical layout to get both capacitors working ideally
• Output capacitors DC-bias effect. If the output capacitance is too low, it can cause boost to become instable
on some loads and this increases EMI. DC bias characteristics need to be obtained from the component
manufacturer; it is not taken into account on component tolerance. X5R/X7R capacitors are recommended.
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11.2 Layout Example
BOOST A
D1
COUT_A
Power
GND Area
Pin A1
CVDD
VBATT rail
FB_A
LEDA2
LEDA1
GND
SW_A
PWM/
INT
LEDA4
LEDA3
VLDO
FSET/
SDA
GND
GND
LEDA6
LEDA5
VDD
ISET
/SCL
GND
GND
LEDB6
LEDB5
GND
SW_B
GND
SW_B
GND
SW_B
EN
VDDIO
LEDB4
LEDB3
SW_B
SW_B
SW_B
FB_B
LEDB2
LEDB1
Small ~39pF cap
Feedback line
LED outputs
Feedback line
Power GND
Area
COUT_B
Output
capacitors
Small ~39pF cap
D2
Power GND
Area
CIN_B
SW_A
GND
SW_A
Schottky diode
Input
capacitors
Vias to Power
GND plane
SW_A
GND
SW_A
L2
Grounded to noise
free GND plane
CVLDO
SW_A
Boost inductor
Vias to Power
GND plane
Output
capacitors
Power
GND Area
Vboost Node
Schottky diode
CIN_A
L1
Boost inductor
Input
capacitors
VBATT rail
Vboost Node
BOOST B
Via to Power GND plane
Via to noise free GND plane
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Device and Documentation Support
12.1 Trademarks
All trademarks are the property of their respective owners.
12.2 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
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13 Mechanical, Packaging, and Orderable Information
The following packaging information and addendum reflect the most current data available for the designated
devices. This data is subject to change without notice and revision of this document
58
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PACKAGE OPTION ADDENDUM
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17-May-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
LP8555YFQR
ACTIVE
Package Type Package Pins Package
Drawing
Qty
DSBGA
YFQ
36
3000
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
Op Temp (°C)
Device Marking
(4/5)
-40 to 85
8555
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
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in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
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(5)
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of the previous line and the two combined represent the entire Device Marking for that device.
(6)
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value exceeds the maximum column width.
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Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
17-May-2014
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Apr-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LP8555YFQR
Package Package Pins
Type Drawing
SPQ
DSBGA
3000
YFQ
36
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
178.0
8.4
Pack Materials-Page 1
2.69
B0
(mm)
K0
(mm)
P1
(mm)
2.69
0.76
4.0
W
Pin1
(mm) Quadrant
8.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Apr-2014
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LP8555YFQR
DSBGA
YFQ
36
3000
210.0
185.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
YFQ0036xxx
D
0.600
±0.075
E
TMD36XXX (Rev B)
D: Max = 2.478 mm, Min =2.418 mm
E: Max = 2.478 mm, Min =2.418 mm
4215086/A
NOTES:
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
www.ti.com
12/12
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