IPA60R125CFD7 MOSFET 600VCoolMOSªCFD7PowerTransistor PG-TO220FP CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™ CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof afastswitchingtechnologytogetherwithsuperiorhardcommutation robustness,withoutsacrificingeasyimplementationinthedesign-in process.TheCoolMOS™CFD7technologymeetshighestefficiencyand reliabilitystandardsandfurthermoresupportshighpowerdensity solutions.Altogether,CoolMOS™CFD7makesresonantswitching topologiesmoreefficient,morereliable,lighterandcooler. Drain Pin 2 Gate Pin 1 Features Source Pin 3 •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Excellenthardcommutationruggedness •Highestreliabilityforresonanttopologies •Highestefficiencywithoutstandingease-of-use/performancetradeoff •Enablingincreasedpowerdensitysolutions Potentialapplications SuiteableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server, Telecom,EVCharging ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe relevanttestsofJEDEC47/20/22 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 125 mΩ Qg,typ 36 nC ID,pulse 66 A Eoss @ 400V 4.1 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package IPA60R125CFD7 PG-TO 220 FullPAK Final Data Sheet Marking 60R125F7 1 RelatedLinks see Appendix A Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 11 7 A TC=25°C TC=100°C - 66 A TC=25°C - - 78 mJ ID=4.4A; VDD=50V; see table 10 EAR - - 0.39 mJ ID=4.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 4.4 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 32 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws IS - - 11 A TC=25°C Diode pulse current IS,pulse - - 66 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=11A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=11A,Tj=25°C see table 8 Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 3 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 3.92 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4 4.5 V VDS=VGS,ID=0.39mA - 8 1 37 µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=125°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.104 0.237 0.125 - Ω VGS=10V,ID=7.8A,Tj=25°C VGS=10V,ID=7.8A,Tj=150°C Gate resistance RG - 8.8 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current1) IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1503 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 28 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related2) Co(er) - 51 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related3) Co(tr) - 520 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 31 - ns VDD=400V,VGS=10V,ID=8.1A, RG=5.3Ω;seetable9 Rise time tr - 14 - ns VDD=400V,VGS=10V,ID=8.1A, RG=5.3Ω;seetable9 Turn-off delay time td(off) - 66 - ns VDD=400V,VGS=10V,ID=8.1A, RG=5.3Ω;seetable9 Fall time tf - 6 - ns VDD=400V,VGS=10V,ID=8.1A, RG=5.3Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 9 - nC VDD=400V,ID=8.1A,VGS=0to10V Gate to drain charge Qgd - 12 - nC VDD=400V,ID=8.1A,VGS=0to10V Gate charge total Qg - 36 - nC VDD=400V,ID=8.1A,VGS=0to10V Gate plateau voltage Vplateau - 5.6 - V VDD=400V,ID=8.1A,VGS=0to10V 1) Maximum specification is defined by calculated six sigma upper confidence bound Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 3) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=7.8A,Tj=25°C 102 152 ns VR=400V,IF=8.1A,diF/dt=100A/µs; see table 8 - 0.47 0.94 µC VR=400V,IF=8.1A,diF/dt=100A/µs; see table 8 - 7.9 - A VR=400V,IF=8.1A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 1.0 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 40 1 µs 10 µs 100 100 µs 10-1 1 ms ID[A] Ptot[W] 30 101 20 10 ms 10-2 10-3 10 DC 10-4 0 0 25 50 75 100 125 10-5 150 100 101 102 TC[°C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 101 10 µs 0.5 0 10 100 100 µs -1 ZthJC[K/W] ID[A] 10 1 ms 10-2 0.2 0.1 0.05 0.02 10 ms 10-1 10-3 0.01 DC 10-4 10-5 single pulse 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 100 60 20 V 90 10 V 8V 20 V 50 10 V 80 7V 8V 70 40 ID[A] ID[A] 60 7V 50 30 6V 40 20 30 5.5 V 20 6V 10 0 10 5V 5.5 V 5V 4.5 V 0 5 10 15 0 20 4.5 V 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.400 2.5 6V 5.5 V 0.360 6.5 V 7V 2.0 10 V RDS(on)[normalized] 20 V 0.320 RDS(on)[Ω] 20 VDS[V] 0.280 1.5 1.0 0.240 0.200 0 10 20 30 40 50 60 0.5 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=7.8A;VGS=10V 8 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 100 10 9 25 °C 80 400 V 120 V 8 7 60 6 VGS[V] ID[A] 150 °C 40 5 4 3 20 2 1 0 0 2 4 6 8 10 0 12 0 10 VGS[V] 20 30 40 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=8.1Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 80 60 IF[A] EAS[mJ] 101 125 °C 100 40 25 °C 20 10-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=4.4A;VDD=50V 9 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 690 104 660 Ciss 10 3 C[pF] VBR(DSS)[V] 630 102 Coss 600 101 Crss 570 100 540 -50 -25 0 25 50 75 100 125 150 10-1 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 6 5 Eoss[µJ] 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 6PackageOutlines DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. DIM A A1 A2 b b1 b2 b3 b4 c D D1 E e e1 N H L L1 Q MILLIMETERS MIN MAX 4.50 4.90 2.34 2.85 2.42 2.86 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 (BSC) INCHES MIN 0.177 0.092 0.095 0.026 0.037 0.037 0.026 0.026 0.016 0.617 0.353 0.394 DOCUMENT NO. Z8B00003319 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION 0.100 (BSC) 5.08 3 28.70 12.78 2.83 2.95 3.15 MAX 0.193 0.112 0.113 0.035 0.054 0.059 0.054 0.059 0.025 0.636 0.387 0.419 0.200 3 29.75 13.75 3.45 3.38 3.50 1.130 0.503 0.111 0.116 0.124 1.171 0.541 0.136 0.133 0.138 ISSUE DATE 24-10-2014 REVISION 05 Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 7AppendixA Table11RelatedLinks • IFXCoolMOSCFD7Webpage:www.infineon.com • IFXCoolMOSCFD7applicationnote:www.infineon.com • IFXCoolMOSCFD7simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2018-02-15 600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 RevisionHistory IPA60R125CFD7 Revision:2018-02-15,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-02-15 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2018-02-15