INCHANGE Semiconductor MUR2040PT Ultrafast Rectifier FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 400 V IF(AV) Average Rectified Forward Current Per Leg Total device 10 20 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 150 A PD Maximum power dissipation 80 W TJ Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ Tstg isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor MUR2040PT Fast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 10A ;Tj=25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=125℃ VR= VRWM trr Maximum Reverse Recovery Time IF =1A; isc website：www.iscsemi.com 2 MAX UNIT 1.0 V 250 10 μA 50 ns isc & iscsemi is registered trademark