DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V(BR)DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TC = +25°C • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm 21mΩ @ VGS = 10V 14A • Low Gate Threshold Voltage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 2 32mΩ @ VGS = 4.5V 14A • 39mΩ @ VGS = -10V -14A • Halogen and Antimony Free. “Green” Device (Note 3) 53mΩ @ VGS = -4.5V -14A • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions • DC-DC Converters • Backlighting • • Case: TO252-4 Case Material: Molded Plastic, "Green" Molding Compound • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • TO252-4L Weight: 0.027 grams (approximate) D D D G2 D S2 G2 Top View UL Flammability Classification Rating 94V-0 Bottom View G1 S2 S1 S1 G1 Pinout Top View N-Channel MOSFET P-Channel MOSFET Ordering Information (Note 4) Part Number DMC3021LK4-13 Notes: Case TO252-4 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information C3021L YYWW DMC3021LK4 Document number: DS35082 Rev. 5 - 2 = Manufacturer’s Marking C3021L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 11 = 2011) WW = Week (01 - 53) 1 of 10 www.diodes.com April 2014 © Diodes Incorporated DMC3021LK4 Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V A A Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 9.4 7.5 Continuous Drain Current (Note 6) VGS = 10V Steady State TC = +25°C TC = +70°C ID 14 14 Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 70 A Avalanche Current, (Notes 7) L = 0.1mH IAS 16 A Avalanche Energy, (Notes 7) L = 0.1mH EAS 13 mJ Units Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -6.8 -5.3 A Continuous Drain Current (Note 6) VGS = -10V Steady State TC = +25°C TC = +70°C ID -14 -14 A IDM -50 A Avalanche Current, (Notes 7) L = 0.1mH IAS -16 A Avalanche Energy, (Notes 7) L = 0.1mH EAS 13 mJ Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Total Power Dissipation (Note 6) Symbol TA = +70°C TC = +25°C Value PD 1.7 22 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 46 Thermal Resistance, Junction to Case (Note 6) Steady state RθJC 5.5 TJ, TSTG -55 to +150 Notes: W 14 TC = +70°C Operating and Storage Temperature Range Units 2.7 TA = +25°C °C/W °C 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMC3021LK4 Document number: DS35082 Rev. 5 - 2 2 of 10 www.diodes.com April 2014 © Diodes Incorporated DMC3021LK4 Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Zero Gate Voltage Drain Current Min Typ BVDSS 30 — — V VGS = 0V, ID = 250μA IDSS — — 1.0 μA VDS = 30V, VGS = 0V IGSS — — ±100 nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250μA @TC = +25°C Gate-Source Leakage Max Unit Test Condition ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) 1 1.5 2.1 — 14 21 — 18 32 mΩ VGS = 10V, ID = 7A VGS = 4.5V, ID = 5.6A Forward Transfer Admittance |Yfs| — 8.5 — S VDS = 5V, ID = 7A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Ciss — 751 — pF Output Capacitance Coss — 121 — pF Reverse Transfer Capacitance Crss — 110 — pF Gate Resistance Rg — 1.5 — Ω Total Gate Charge (4.5V) Qg — 9 — nC Total Gate Charge (10V) Qg — 17.4 — nC Gate-Source Charge Qgs — 2.2 — nC Input Capacitance Gate-Drain Charge Qgd — 3 — nC Turn-On Delay Time tD(on) — 2.5 — ns Turn-On Rise Time tr — 6.6 — ns Turn-Off Delay Time tD(off) — 19.0 — ns tf — 6.3 — ns Turn-Off Fall Time VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 10V, VGS = 0V,f = 1.0MHz VGS = 10V, VDS = 15V, ID = 6A VDD = 15V, VGS = 10V, RG = 6Ω, RL = 1.8Ω, ID = 6.7A 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 30 VGS = 10V 20 VGS = 4.5V VDS = 5.0V VGS = 4.0V 25 ID, DRAIN CURRENT (A) Notes: ID, DRAIN CURRENT (A) NEW PRODUCT Drain-Source Breakdown Voltage Symbol 20 15 VGS = 3.5V 10 VGS = 3.0V 15 10 TA = 150°C TA = 85°C 5 TA = 125°C 5 VGS = 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics DMC3021LK4 Document number: DS35082 Rev. 5 - 2 2 3 of 10 www.diodes.com 0 TA = 25°C TA = -55°C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 April 2014 © Diodes Incorporated 0.04 0.03 0.02 VGS = 4.5V VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 10V ID = 10A 1.3 VGS = 4.5V ID = 5A 1.1 0.9 0.7 0.5 -50 -25 0 25 50 VGS = 4.5V 0.04 TA = 150°C T A = 125°C 0.03 T A = 85°C T A = 25°C 0.02 T A = -55°C 0.01 0 30 1.7 1.5 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) 0.05 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.05 0.04 VGS = 4.5V ID = 5A 0.03 0.02 VGS = 10V ID = 10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 20 2.5 18 16 2 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMC3021LK4 ID = 1mA 1.5 ID = 250µA 1 14 12 10 8 TA = 25°C 6 4 2 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature DMC3021LK4 Document number: DS35082 Rev. 5 - 2 4 of 10 www.diodes.com 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current April 2014 © Diodes Incorporated DMC3021LK4 10,000 10,000 f=1MHz CT, JUNCTION CAPACITANCE (pF) IDSS, LEAKAGE CURRENT (nA) 1,000 T A = 125°C 100 T A = 85°C 10 T A = 25°C 1 1,000 Coss Crss 10 0 100 10 Ciss 100 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Junction Capacitance 30 RDS(ON) Limited 8 ID, DRAIN CURRENT (A) VDS = 15V ID = 6A VGS (V) NEW PRODUCT T A = 150°C 6 4 2 10 DC PW = 10s PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms PW = 100µs PW = 10µs 0.1 TJ(MAX) = 150° C 0 TA = 25°C Single Pulse 0 2 4 6 8 10 12 14 16 18 QG - (nC) Fig. 11 Gate Charge Characteristics DMC3021LK4 Document number: DS35082 Rev. 5 - 2 20 0.01 0.1 5 of 10 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 April 2014 © Diodes Incorporated DMC3021LK4 Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Min BVDSS IDSS IGSS @TC = +25°C Gate-Source Leakage Typ Max Unit Test Condition -30 — — V VGS = 0V, ID = -250μA — — -1 μA VDS = -30V, VGS = 0V — — ±100 nA VGS = ±20V, VDS = 0V -1 -1.7 -2.2 V VDS = VGS, ID = -250μA ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) — 30 39 — 42 53 mΩ VGS = -10V, ID = -4.3A VGS = -4.5V, ID = -3.7A |Yfs| — 10 — S VDS = -5V, ID = -4.3A VSD — -0.75 -1.0 V VGS = 0V, IS = -1A Input Capacitance Ciss — 1039 — pF Output Capacitance Coss — 144 — pF Reverse Transfer Capacitance Crss — 134 — pF Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Gate Resistance Rg — 13 — Ω Total Gate Charge (4.5V) Qg — 10.1 — nC Total Gate Charge (10V) Qg — 21.1 — nC Qgs — 2.8 — nC nC Gate-Source Charge Gate-Drain Charge Qgd — 3.2 — Turn-On Delay Time tD(on) — 10.1 — ns Turn-On Rise Time tr — 6.5 — ns Turn-Off Delay Time tD(off) — 50.1 — ns tf — 22.2 — ns Turn-Off Fall Time Notes: VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V,f = 1.0MHz VGS = -10V, VDS = -15V, ID = -6A VDS = -15V, VGS = -10V, RG = 6Ω, ID = -1A 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 20 30 -VGS = 10V -VGS = 4.5V VDS = -5.0V -ID, DRAIN CURRENT (A) 25 -ID, DRAIN CURRENT (A) NEW PRODUCT Zero Gate Voltage Drain Current Symbol -VGS = 4.0V 20 -VGS = 3.5V 15 10 -VGS = 3.0V 5 0 15 10 TA = 85°C TA = 125°C 5 -VGS = 2.5V TA = 150°C -VGS = 2.0V 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig.13 Typical Output Characteristics DMC3021LK4 Document number: DS35082 Rev. 5 - 2 2 0 TA = 25°C TA = -55°C 0 1 2 3 4 GATE-SOURCE VOLTAGE (V) Fig. 14 Typical Transfer Characteristics 5 -VGS, 6 of 10 www.diodes.com April 2014 © Diodes Incorporated 0.08 0.06 0.04 -VGS = 4.5V -VGS = 10V 0.02 0 0 5 10 15 -ID, DRAIN-SOURCE CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 0.10 0.08 TA = 150°C TA = 125°C 0.06 TA = 85°C 0.04 T A = 25°C TA = -55°C 0.02 0 20 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN CURRENT (A) Fig. 16 Typical On-Resistance vs. Drain Current and Temperature 20 1.3 1.1 -VGS = 10V -I D = 10A 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 0.12 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) 0.10 1.7 0.06 -VGS = 4.5V -I D = 5A 0.04 -VGS = 10V -I D = 10A 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 18 On-Resistance Variation with Temperature 20 2.5 18 2 -IS, SOURCE CURRENT (A) -VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMC3021LK4 -I D = 250µA 1.5 -I D = 1mA 1 0.5 16 14 12 TA = 25°C 10 8 6 4 2 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 19 On-Resistance Variation with Temperature DMC3021LK4 Document number: DS35082 Rev. 5 - 2 7 of 10 www.diodes.com 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 20 Diode Forward Voltage vs. Current April 2014 © Diodes Incorporated DMC3021LK4 10,000 -IDSS, LEAKAGE CURRENT (nA) TA = 150°C TA = 125°C TA = 85°C 10 1 TA = 25°C 0.1 f = 1MHz 1,000 100 Crss 100 10 0 10 Ciss Coss 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Drain-Source Leakage Current vs. Voltage 100 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 22 Typical Junction Capacitance 30 RDS(ON) Limited -ID, DRAIN CURRENT (A) 8 VDS = 15V ID = 6A VGS (V) 6 4 2 10 DC PW = 10s PW = 1s PW = 100ms 1 PW = 10ms PW = 1ms PW = 100µs PW = 10µs 0.1 TJ(MAX) = 150°C TA = 25°C Single Pulse 0 0 5 10 15 20 QG - (nC) Fig. 23 Gate Charge Characteristics 0.01 0.1 25 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 24 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1,000 CT, JUNCTION CAPACITANCE (pF) 10,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 46°C/W Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.00001 DMC3021LK4 Document number: DS35082 Rev. 5 - 2 0.0001 0.001 0.01 0.1 1 T1, PULSE DURATION TIME (sec) Fig. 25 Transient Thermal Resistance 8 of 10 www.diodes.com 10 100 1,000 April 2014 © Diodes Incorporated DMC3021LK4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E TO252-4 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.51 0.71 0.583 b2 0.61 0.79 0.70 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 1.27 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 NEW PRODUCT L3 A2 D E1 H L4 A1 L 4X b2 e 5X b a Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 Y2 Y3 c1 Y X (4x) DMC3021LK4 Document number: DS35082 Rev. 5 - 2 c Dimensions c c1 X X1 Y Y1 Y2 Y3 9 of 10 www.diodes.com Value (in mm) 1.27 2.54 1.00 5.73 2.00 6.17 1.64 2.66 April 2014 © Diodes Incorporated DMC3021LK4 IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DMC3021LK4 Document number: DS35082 Rev. 5 - 2 10 of 10 www.diodes.com April 2014 © Diodes Incorporated