GeneSiC MSRT100100A High surge capability Datasheet

MSRT10060(A)D thru MSRT100100(A)D
Silicon Standard
Recovery Diode
VRRM = 600 V - 1000 V
IF(AV) = 100 A
Features
• High Surge Capability
• Types from 600 V to 1000 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MSRT100XXD
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive
p
p
peak reverse voltage
g
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
Conditions
MSRT10060(A)D
MSRT10080(A)D
MSRT100100(A)D
Unit
600
800
1000
V
424
566
707
V
600
-55 to 150
-55 to 150
800
-55 to 150
-55 to 150
1000
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MSRT10060(A)D
MSRT10080(A)D
MSRT100100(A)D
Unit
Average forward current (per
leg)
IF(AV)
TC = 140 °C
100
100
100
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
2000
2000
2000
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 100 A, Tj = 25 °C
1.1
1.1
1.1
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
10
10
10
μA
Tj = 150 °C
5
5
5
mA
0.45
0.45
0.45
°C/W
Parameter
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
Feb 2016
RΘjc
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
MSRT10060(A)D thru MSRT100100(A)D
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
MSRT10060(A)D thru MSRT100100(A)D
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
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