MCC MCU50N06 N-channel enhancement mode field effect transistor Datasheet

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Micro Commercial Components
20736 Marilla Street Chatsworth
CA 91311
Phone:(818) 701-4933
Fax: (818) 701-4939
Features
•
•
•
•
•
•
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Halogen free available upon request by adding suffix "-HF"
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Epoxy meets UL 94 V-0 flammability rating
•
Moisture Sensitivity Level 1
MCU50N06
N-Channel
Enhancement Mode
Field Effect Transistor
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
EAS
VGSS
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Single Pulsed Avalanche Energy(*)
Gate-source Voltage
Power Dissipation
PD
R©JA
TJ
TSTG
Rating
60
50
220
115
±20
1.25
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
DPAK
J
Unit
V
A
A
mJ
V
H
1
C
F
4
E
I
W
100
-55 to +150
-55 to +150
O
2
3
к/W
к
к
M
V
K
*EAS condition: Tj=25℃,VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
G
Internal Block Diagram
Q
A
D
L
D
B
1.GATE
2.DRAIN
3.SOURCE
DIMENSIONS
G
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Q
S
INCHES
MIN
MAX
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.023
0.256
0.264
0.201
0.215
0.190
0.236
0.244
0.086
0.094
0.386
0.409
0.114
0.055
0.067
0.063
0.043
0.051
0.000
0.012
0.211
MM
MIN
2.20
0.00
0.66
0.46
6.50
5.10
MAX
2.40
0.13
0.86
0.58
6.70
5.46
NOTE
4.83
6.00
2.18
9.80
6.20
2.39
10.40
2.90
1.40
1.70
1.60
1.10
1.30
0.00
0.30
5.35
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Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR) DSS
VGS = 0V, ID =250µA
60
V
Zero gate voltage drain current
IDSS
VDS =60V, VGS =0V
1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
2
2.5
V
Static drain-source on-resistance
RDS(on)
VGS =10V, ID =20A
2
20
mΩ
gFS
VDS =25V, ID =20A
On characteristics (note1)
Forward transconductance
1.5
17
24
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS =25V,VGS =0V,
f =1MHz
900
pF
104
33
Switching characteristics (note 2)
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
VDS=30V, VGS=10V,
ID=50A
VDD=30V,ID=2A,
VGS=10V,RG=2.5Ω,
RL=15Ω
30
nC
10
5
25
5
ns
50
6
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
1.2
V
IS
5
50
A
ISM
2
220
A
VSD
VGS =0V, IS=40A
Notes:
1.
Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2.
Guaranteed by design, not subject to production.
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Typical Characteristics
Transfer Characteristics
Output Characteristics
1000
1000
VDS=25.0V
Ta=25℃
VGS= 8V
100
(A)
VGS= 7V
ID
VGS= 6V
ID
VGS= 5.5V
DRAIN CURRENT
(A)
Pulsed
Pulsed
VGS= 15,10V
DRAIN CURRENT
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VGS= 5V
10
VGS= 4.5V
100
Ta=25℃
10
1
0.1
0.1
1
10
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
1
100
VDS
(m)
VGS=4.5V
RDS(ON)
24
ON-RESISTANCE
(m)
9
VGS
10
(V)
20
18
16
VGS=10V
14
48
44
40
36
32
28
20
16
10
12
10
20
30
40
DRAIN CURRENT
50
ID
60
70
8
80
Ta=100℃
24
12
0
Pulsed
ID=20A
52
28
RDS(ON)
8
56
Pulsed
30
ON-RESISTANCE
7
RDS(ON)—— VGS
ID
Ta=25℃
32
8
6
60
34
22
5
GATE TO SOURCE VOLTAGE
36
26
4
(V)
Ta=25℃
3
(A)
4
5
7
8
VGS
9
10
(V)
Threshold Voltage
IS —— VSD
100
6
GATE TO SOURCE VOLTAGE
2.50
Pulsed
2.25
2.00
VTH
Ta=100℃
Ta=25℃
1
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
10
0.1
0.01
1.75
1.50
ID=250uA
1.25
1.00
0.75
1E-3
0
200
400
600
800
1000
SOURCE TO DRAIN VOLTAGE
1200
1400
1600
VSD (mV)
0.50
25
50
75
JUNCTION TEMPERATURE
100
TJ
125
(℃ )
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Ordering Information :
Device
Packing
Part Number-TP
Tape&Reel:2.5Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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