DMP1055USW P-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) max ID MAX TA = +25°C Low On-Resistance Low Gate Threshold Voltage -3.8A -3.4A -2.9A Low Input Capacitance -12V 48mΩ @ VGS = -4.5V 59mΩ @ VGS = -2.5V 80mΩ @ VGS = -1.8V Fast Switching Speed Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Mechanical Data Case: SOT363 Case Material: Molded Plastic. Applications UL Flammability Classification Rating 94V-0 DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT363 D D S 6 5 4 D G ESD protected 1 D Top View 2 3 Gate Protection Diode D G Top View Pin out S Internal Schematic Ordering Information (Note 4) Part Number DMP1055USW-7 DMP1055USW-13 Notes: Case SOT363 SOT363 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 55W Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMP1055USW Document number: DS38336 Rev. 2 - 2 Mar 3 55W = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M = Month (ex: 9 = September) YM NEW PRODUCT PRODUCT NEW PRODUCT NEW Product Summary 2018 F Apr 4 2019 G May 5 Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D December 2016 © Diodes Incorporated DMP1055USW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT PRODUCT NEW PRODUCT NEW Drain-Source Voltage Gate-Source Voltage Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Continuous Drain Current (Note 6) VGS = -4.5V TA = +25C TA = +70C Value -12 ±8 -3.8 -3.0 -1.7 -20 ID IS IDM Units V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Symbol PD RθJA PD RθJA RθJC TJ, TSTG Steady State Steady State Value 0.66 192 1.03 123 39 -55 to +150 Units W °C/W W °C/W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 - - -1.0 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) RDS(ON) 41 49 69 110 -0.7 -1 48 59 80 150 -1.2 V Static Drain-Source On-Resistance -0.4 - mΩ VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3.0A VGS = -2.5V, ID = -1.0A VGS = -1.8V, ID = -1.0A VGS = -1.5V, ID = -0.5A VGS = 0V, IS = -3.7A - 1,028 285 254 19.6 13 20.8 1.8 4.5 5.6 12.8 30.7 25.4 31.6 7.8 - pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR V Test Condition VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -10V, ID = -4.7A VDD = -6V, VGS = -4.5V, RL = 1.6Ω, RG = 1Ω IS = -3.6A, dI/dt = 100A/μs IS = -3.6A, dI/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1055USW Document number: DS38336 Rev. 2 - 2 2 of 7 www.diodes.com December 2016 © Diodes Incorporated DMP1055USW 18.0 16.0 VGS = -3.5V VGS = -3.0V 14.0 VGS = -2.0V 12.0 10.0 VGS = -1.8V VGS=-2.5V VDS = -5.0V 18 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 VGS = -4.5V VGS = -4.0V 8.0 6.0 VGS = -1.5V 16 14 12 10 8 6 VGS = -1.0V VGS = -0.9V 2.0 TA = 150oC 2 TA = 25oC TA = -55oC 0 0.0 0 0.5 1 1.5 2 2.5 0 3 0.5 VGS = -1.8V VGS = -1.5V VGS = -2.5V 0.1 VGS = -4.5V 0.01 0.001 0 2 4 6 8 10 12 14 16 18 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 1 VGS = -4.5V TA = 125oC 0.05 TA = 85oC 0.04 TA = 25oC 0.03 TA = -55oC 0.02 0 2 4 6 8 10 12 14 16 0.16 ID = -3.6A 0.14 ID = -3.1A 0.12 Document number: DS38336 Rev. 2 - 2 2.5 3 ID = -2.6A 0.1 ID = -0.5A 0.08 0.06 0.04 0.02 0 0 1 18 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMP1055USW 2 0.18 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.06 TA = 1.5 0.2 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 150oC 1 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 85oC TA = 125oC 4 4.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT PRODUCT NEW PRODUCT NEW 20.0 3 of 7 www.diodes.com 2 1.8 1.6 VGS = -2.5V, ID = -5.0A 1.4 1.2 1 VGS = -1.8V, ID = -3.0A 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature December 2016 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.1 0.09 VGS = -1.8V, ID = -3.0A 0.08 0.07 0.06 0.05 VGS = -2.5V, ID = -5.0A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 0.8 ID = -1mA 0.6 ID = -250μA 0.4 0.2 0 150 -50 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 0 25 50 75 100 125 150 10000 18 f=1MHz VGS = 0V CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 20 16 14 12 10 8 TA = 6 125oC TA = 85oC 4 TA = 25oC TA = 150oC 2 Ciss 1000 Coss Crss 100 TA = -55oC 0 10 0 0.3 0.6 0.9 1.2 1.5 0 2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 4 6 8 10 12 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 8 100 ID, DRAIN CURRENT (A) RDS(ON) Limited 6 VGS (V) NEW PRODUCT PRODUCT NEW PRODUCT NEW DMP1055USW 4 VDS = -10V, ID = -4.7A 10 PW =10ms 0.01 0 0 5 10 15 20 25 Document number: DS38336 Rev. 2 - 2 PW =100ms PW =1s TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= -4.5V 0.1 1 PW =10s DC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge DMP1055USW PW =1ms 1 0.1 2 PW =100µs 4 of 7 www.diodes.com December 2016 © Diodes Incorporated DMP1055USW r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT PRODUCT NEW PRODUCT NEW 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 198℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP1055USW Document number: DS38336 Rev. 2 - 2 5 of 7 www.diodes.com December 2016 © Diodes Incorporated DMP1055USW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. NEW PRODUCT PRODUCT NEW PRODUCT NEW SOT363 E E1 F SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -All Dimensions in mm b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions C G X Y Y1 G Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 Y X DMP1055USW Document number: DS38336 Rev. 2 - 2 6 of 7 www.diodes.com December 2016 © Diodes Incorporated DMP1055USW IMPORTANT NOTICE NEW PRODUCT PRODUCT NEW PRODUCT NEW DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com DMP1055USW Document number: DS38336 Rev. 2 - 2 7 of 7 www.diodes.com December 2016 © Diodes Incorporated