Panasonic LLXFTN2SK600 Light emitting diode Datasheet

This product complies with the RoHS Directive (EU 2002/95/EC).
Light Emitting Diodes
LN260RPX
Square Type
 3.0 mm × 2.0 mm
 Absolute Maximum Ratings Ta = 25°C
Parameter
 Lighting Color
Symbol
Rating
Unit
Power dissipation
PD
70
mW
Forward current
IF
25
mA
Pulse forward current *
IFP
150
mA
Reverse voltage
VR
4
V
Operating ambient temperature
Topr
–25 to +85
°C
Storage temperature
Tstg
–30 to +100
°C
 Red
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
 Electro-Optical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
0.3
0.7
Max
Unit
Luminous intensity
IO
Reverse current
IR
VR = 4 V
Forward voltage
VF
IF = 20 mA
2.2
Peak emission wavelength
λP
IF = 20 mA
700
nm
Spectral half band width
Δλ
IF = 20 mA
100
nm
IO  IF
3
1
0.5
0.3
1
3
5
10
30
50
30
10
5
3
1.6
2.0
2.2
100
50
30
10
−20
2.4
80
40°
60
30°
20° 10°
70°
Peak emission wavelength λP (nm)
Publication date: November 2008
30°
40°
50°
60°
40°
70°
20°
80°
90°
100
10° 20°
60°
60°
40
0°
80°
50°
800
40
60
80
100
IF  Ta
Directive characteristics
700
20
50
100
600
0
Ambient temperature Ta (°C)
Relative luminous intensity  λP
0
500
V
300
Forward voltage VF (V)
20
2.8
500
80
60
40
20
0
Forward current IF (mA)
Relative luminous intensity (%)
Forward current IF (mA)
1.8
µA
Relative luminous intensity  Ta
50
1
100
5
1000
Relative luminous intensity (%)
5
0.1
IF  VF
100
Forward current IF (mA)
Luminous intensity IO (mcd)
10
mcd
80°
20
40
60
Relative luminous intensity (%)
SHD00493BEK
80
90°
100
40
30
20
10
0
0
20
40
60
80
100
Ambient temperature Ta (°C)
1
This product complies with the RoHS Directive (EU 2002/95/EC).
LN260RPX
 Package (Unit: mm)
R0.1
3.0 ± 00.2
3.2 ± 00.2
4.0 ± 0.2
1.0 Max. NOT SOLDERED
LLXFTN2SK600
2.0 ± 00.2
R0.1
2.0 ± 00.2
2 − 0.45 ± 0.1
2.54
1
1.5
26.5 ± 1.0
2 − 0.6 Max
2
 Pin name
1: Anode
2: Cathode
2
SHD00493BEK
0.45 ± 0.1
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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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