DMN3135LVT 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.5A 100mΩ @ VGS = 4.5V 2.8A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • TSOT26 Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Mechanical Data • • • Backlighting DC-DC Converters Power management functions Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN3135LVT-7 Notes: Case TSOT26 Packaging 3000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 31D Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMN3135LVT Document number: DS35408 Rev. 6 - 2 Mar 3 31D = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) YM ADVANCE INFORMATION V(BR)DSS Features and Benefits 2012 Z Apr 4 May 5 2013 A Jun 6 2014 B Jul 7 1 of 6 www.diodes.com Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D May 2012 © Diodes Incorporated DMN3135LVT Maximum Ratings @ TA = 25°C unless otherwise stated Characteristic Symbol VDSS VGSS ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s ID 4.3 3.3 A ID 2.8 2.1 A Units V V A 3.4 2.6 25 1.5 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 5) Thermal Characteristics ID Value 30 ±20 3.5 2.7 IDM IS A A A @ TA = 25°C unless otherwise stated Characteristic Symbol PD Total Power Dissipation (Note 5) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Value 0.84 155 109 1.27 102 72 34 -55 to +150 RθJA Total Power Dissipation (Note 6) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1.0 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.3 1.8 2.2 V RDS (ON) - 35 54 60 100 mΩ |Yfs| VSD - 4 0.8 1 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 3.1A VGS = 4.5V, ID = 2A VDS = 5V, ID = 3.1A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 305 40 40 1.4 4.1 9.0 1.2 1.5 2.6 4.6 13.1 2.5 - pF Ω nC ns Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 4.5V, ID = 3.1A VDS = 15V, VGS = 10V, ID = 3.1A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 4.7Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN3135LVT Document number: DS35408 Rev. 6 - 2 2 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN3135LVT 10 10.0 TA = 150°C VDS = 5.0V VGS=4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS =4.5V 6.0 VGS =3.5V 4.0 VGS =10V VGS =3.0V TA = 25° C TA = 85° C 6 4 TA = -55°C 2 2.0 VGS=2.5V 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0 5 0 1 2 3 4 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 5 0.16 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 1 0.1 0.01 0 4 8 12 16 20 VGS= 4.5V 0.12 TA = 125°C TA = 85°C T A = 25°C 0.04 T A = -55°C 0 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.4 1.2 1 0.8 -25 0 25 50 75 100 Document number: DS35408 Rev. 6 - 2 6 8 10 125 150 0.10 VGS =4.5V ID=5A 0.08 0.06 VGS=10V ID=10A 0.04 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN3135LVT 4 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 0.6 -50 TA = 150°C 0.08 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) ADVANCE INFORMATION TA = 125°C 8 8.0 3 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN3135LVT 8 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 10 2 1.6 1.2 0.8 TA= 25°C 6 4 2 0.4 0 -50 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -25 1000 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10000 IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz CISS 100 COSS CRSS TA =150°C 1000 TA =125°C 100 T A =85°C 10 1 T A =-55°C 10 TA =25°C 0.1 0 5 10 15 20 25 0 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 10 100 P(pk), PEAK TRANSIENT POWER (W) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 2.4 8 6 4 2 0 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN3135LVT Document number: DS35408 Rev. 6 - 2 10 Single Pulse RθJA = 157°C/W RθJA(t) = RθJA * r(t) TJ -TA = P * RθJA(t) 80 60 40 20 0 0.00001 0.001 0.1 10 1,000 t1, Pulse Duration Time (sec) Fig. 12 Single Pulse Maximum Power Dissipation 4 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN3135LVT r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 157°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions TSOT26 Dim Min Max Typ A 1.00 − − A1 0.01 0.10 − A2 0.84 0.90 − D 2.90 − − E 2.80 − − E1 1.60 − − b 0.30 0.45 − c 0.12 0.20 − e 0.95 − − e1 1.90 − − L 0.30 0.50 L2 0.25 − − θ 0° 8° 4° θ1 4° 12° − All Dimensions in mm D e1 E E1 L2 c 4x θ1 e L θ 6x b A A2 A1 Suggested Pad Layout C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMN3135LVT Document number: DS35408 Rev. 6 - 2 5 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN3135LVT IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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