Advance Technical Information IXYH40N65C3D1 IXYQ40N65C3D1 XPTTM 650V IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat) tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.35V 20ns TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 80 40 50 180 A A A A IA EAS TC = 25°C TC = 25°C 20 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 80 @VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 5 μs PC TC = 25°C = 25°C = 110°C = 110°C = 25°C, 1ms G G C E G = Gate E = Emitter 300 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6.0 5.5 g g Md Mounting Torque Weight TO-247 TO-3P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved C = Collector Tab = Collector 6.0 V 10 A 1.5 mA 100 2.0 2.4 2.35 Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Fast Diode Avalanche Rated Short Circuit Capability High Power Density Extremely Rugged Low Gate Drive Requirement Applications V TJ = 150C VCE = 0V, VGE = 20V Tab Advantages IGES Tab TO-3P (IXYQ) Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s E Features TJ TJM Tstg TL TSOLD C nA V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100625(8/14) IXYH40N65C3D1 IXYQ40N65C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 16 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 RthJC RthCS TO-247 (IXYH) Outline 26 S 1950 205 40 pF pF pF 66 13 32 nC nC nC 23 40 0.83 110 20 0.36 ns ns mJ ns ns mJ 0.65 24 40 1.60 130 30 0.53 ns ns mJ ns ns mJ 0.25 0.50 °C/W °C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 Irr trr IF = 30A, VGE = 0V, -diF/dt = 500A/μs, VR = 400V Characteristic Values Min. Typ. Max. TJ = 150°C 1.2 2.5 V V TJ = 150°C TJ = 150°C 23 120 A ns RthJC 0.60 °C/W 1 = Gate 3 = Emitter Notes: 2,4 = Collector 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH40N65C3D1 IXYQ40N65C3D1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 80 240 VGE = 15V 13V 12V 70 VGE = 15V 200 11V 14V 60 10V I C (A) 50 I C (A) 160 40 13V 12V 120 11V 9V 30 80 10V 20 8V 10 8V 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0 5 10 15 20 25 VCE (V) VCE (V) Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 2.0 VGE = 15V 13V 12V 70 30 VGE = 15V 1.8 I C = 80A 11V VCE(sat) - Normalized 60 50 I C (A) 9V 40 10V 40 30 9V 1.6 1.4 1.2 I C = 40A 1.0 0.8 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 7V 4.5 I C = 20A 0.6 8V 0.4 -50 5 -25 0 25 50 VCE (V) Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6 75 100 125 150 175 TJ (ºC) Fig. 6. Input Admittance 70 TJ = 25ºC 60 5 4 I C (A) V CE (V) 50 I C = 80A 3 40 30 TJ = 150ºC 25ºC 20 40A - 40ºC 2 10 20A 1 0 8 9 10 11 12 VGE - (V) © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 4.5 5.5 6.5 7.5 8.5 VGE (V) 9.5 10.5 11.5 IXYH40N65C3D1 IXYQ40N65C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 40 16 TJ = - 40ºC 35 VCE = 325V 14 30 I C = 40A I G = 10mA 12 25ºC 10 150ºC VGE (V) g f s (S) 25 20 8 15 6 10 4 5 2 0 0 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 QG (nC) I C (A) Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 90 10,000 f = 1 MHz 80 Cies 60 1,000 I C (A) Capacitance (pF) 70 Coes 100 50 40 30 Cres 10 20 TJ = 150ºC 10 RG = 10Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE (V) VCE (V) Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 100 I D (A) 100µs 1 1ms 0.1 10ms 0.01 TJ = 175ºC 100ms TC = 25ºC Single Pulse DC Z (th)JC (ºC / W) 25µs 10 0.001 1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 IXYH40N65C3D1 IXYQ40N65C3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 1.8 Eoff 2.0 Eoff 8 --- TJ = 150ºC , VGE = 15V 1.6 I C = 60A 6 1.2 5 1.0 4 0.8 3 I C = 30A 0.6 2 0.4 1 0.2 15 20 25 30 35 40 45 50 1.2 3 TJ = 150ºC 0.8 2 0.4 0.0 0 15 55 20 25 30 35 Eoff Eon ---- 50 55 60 4.5 90 4.0 80 tfi 400 td(off) - - - - 360 TJ = 150ºC, VGE = 15V 3.5 70 3.0 60 VCE = 400V 320 280 I C = 60A 50 240 0.8 2.5 0.6 2.0 40 1.5 30 160 1.0 20 120 0.5 150 10 0.4 200 I C = 30A t d(off) (ns) E on (mJ) I C = 60A t f i (ns) VCE = 400V 1.0 Eoff (mJ) 45 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance RG = 10Ω , VGE = 15V 1.2 40 I C (A) Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 1.4 1 TJ = 25ºC RG (Ω) 1.6 4 VCE = 400V 0 10 ---- E on (mJ) 1.4 Eon 5 RG = 10Ω , VGE = 15V 1.6 7 VCE = 400V E on (mJ) E off (mJ) Eon - 9 E off (mJ) 2.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current I C = 30A 0.2 0.0 25 50 75 100 125 80 10 15 20 25 30 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 70 td(off) - - - - 200 80 180 70 RG = 10Ω , VGE = 15V VCE = 400V 60 160 45 50 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) - - - - 55 150 140 RG = 10Ω , VGE = 15V VCE = 400V 60 130 140 120 30 100 TJ = 25ºC 20 80 10 60 0 40 15 20 25 30 35 40 45 50 I C (A) © 2014 IXYS CORPORATION, All Rights Reserved 55 60 50 120 40 110 I C = 30A, 60A 30 100 20 90 10 25 50 75 100 TJ (ºC) 125 80 150 t d(off) (ns) 40 t d(off) (ns) TJ = 150ºC t f i (ns) 50 t f i (ns) 40 RG (Ω) TJ (ºC) 80 35 IXYH40N65C3D1 IXYQ40N65C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri 180 110 td(on) - - - - 120 100 TJ = 150ºC, VGE = 15V 160 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri 100 90 60 I C = 30A 80 50 60 40 40 30 20 20 0 t r i (ns) t r i (ns) 100 80 10 10 15 20 25 30 35 40 45 50 38 tri td(on) - - - - RG = 10Ω , VGE = 15V VCE = 400V 36 34 32 I C = 60A 30 80 28 60 26 40 24 I C = 30A 22 0 25 50 t d(on) (ns) t r i (ns) 120 20 75 20 20 15 10 20 25 30 35 40 I C (A) 180 100 25 40 15 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 140 TJ = 25ºC, 150ºC 60 0 55 RG (Ω) 160 30 100 125 20 150 TJ (ºC) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 45 50 55 60 t d(on) (ns) 70 t d(on) (ns) 120 35 VCE = 400V 80 I C = 60A td(on) - - - - RG = 10Ω , VGE = 15V VCE = 400V 140 40 IXYH40N65C3D1 IXYQ40N65C3D1 Fig. 22. Diode Forward Characteristics Fig. 23. Reverse Recovery Charge vs. -diF/dt 80 1.8 70 1.7 TJ = 150ºC IF = 60A VR = 400V 1.6 60 1.5 QRR (µC) 50 I F (A) TVJ = 150ºC TJ = 25ºC 40 30 30A 1.4 1.3 1.2 20 15A 1.1 10 1 0.9 0 0 0.5 1 1.5 2 250 2.5 300 350 400 Fig. 24. Reverse Recovery Current vs. -diF/dt 500 550 600 650 700 Fig. 25. Reverse Recovery Time vs. -diF/dt 30 220 TVJ = 150ºC 28 30A VR = 400V 26 TVJ = 150ºC 200 15A 24 VR = 400V 180 tRR (ns) 22 I RR (A) 450 -diF/ dt (A/µs) VF (V) 20 18 160 IF = 60A 140 30A 16 120 14 IF = 60A 10 250 15A 100 12 80 300 350 400 450 500 550 600 650 250 700 300 350 400 Fig. 26. Dynamic Parameters QRR, IRR vs. Virtual Junction Temperature 1.2 450 500 550 600 650 700 -diF/dt (A/µs) diF/dt (A/µs) Fig. 27. Maximum Transient Thermal Impedance (Diode) 1 VR = 400V 1 I F = 30A -dIF /dt = 500 A/µs Z (th)JC (ºC / W) KF 0.8 0.6 0.4 0.1 KF IRR KF QRR 0.2 0 0 20 40 60 80 100 TVJ © 2014 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) IXYS REF: IXY_40N65C3D1(51) 8-12-14