DSK M5J Surface mount rectifier Datasheet

Diode Semiconductor Korea
M1J---M7J
VOLTAGE RANGE: 50 ---- 1000V
SURFACE MOUNT RECTIFIERS
CURRENT:
FEATURES
1.0 A
SMAJ
For surface mounted applications
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropnol
and similar solvents
The plastic material carries U/L
recognition 94V-0
2.6± 0.15
1.95± 0.25
4.3± 0.1
5.6± 0.2
2.35± 0.1
MECHANICAL DATA
Case: JEDEC SMAJ,molded plastic
Terminals: Solder plated, solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.084 grams
Mounting position: Any
0.2± 0.05
0.203MAX
1.3± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
M1J
M2J
M3J
M4J
M5J
M6J
M7J
M1
M2
M3
M4
M5
M6
M7
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified
current
@TL=110
I(AV)
1.0
A
I FSM
30
A
Maximum instantaneous forward
voltage at 1.0 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
VF
1.1
V
IR
5.0
50
µA
Typical junction capacitance (Note1)
CJ
15
pF
RθJA
75
TJ
- 55 --- + 150
TSTG
- 55 --- + 150
Device marking
Maximum recurrent peak reverse voltage
UNITS
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load TJ=125
Typical thermal resistance (Note2)
Operating temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient
/W
www.diode.kr
Diode Semiconductor Korea
M1J--M7J
FIG.1 -- FORWARD DERATING CURVE
FIG.2 PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT,AMPERES
AVERAGE FORWARD
CURRENT,AMPERES
1.2
Resistive or
inductive Load
1.0
0.8
0.6
0.4
0.2X0.2(5.0X5.0mm)
THICK COPPERPAND
AREAS
0.2
0
0
20
40
60
80
100
120
140
160
10 0
O
T L = 11 0 C
8 .3 m s S in g le H a lf S in e
(J E D E C M e th o d )
30
10
1
1
AMBIENT TEMPERATURE
INSTANTANEOUS FORWARD
CURRENT,AMPERES
O
TJ=25 C
1
0.6
0.8
1.0.
1.2
S
1.4
1.6
1.8
100
INSTANTANEOUS REVERSE
CURRENT MICROAMPERES
10
0.01
0.4
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
10
O
TJ=125 C
1
O
TJ=75 C
0.1
TJ=25OC
0.01
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TRANSIENT THERMAL IMPEDANCE
100
100
TRANSIENT THERMAL
IMPEDANCE, /W
JUNCTION CAPACITANCE pF
10 0
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
Puise Width=300
1%DUTY CYCLE
10
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
0.1
W a ve
0
TJ=25 C
f=1.0MHZ
Vsig=50mVp-p
10
1
0.01
0.1
1
REVERSE VOLTAGE,VOLTS
10
100
10
1
0.1
0.01
UNITS MOUNTED on
0.20x0.20''(5.0X5.0mm)X0.5mil
INCHES(0.013mm)
THICK COPPERLAND AREAS
0.1
1
10
100
PULSE DURATON,SEC
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