Sanyo ENA1532A General-purpose switching device application Datasheet

CPH6445
Ordering number : ENA1532A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
CPH6445
General-Purpose Switching Device
Applications
Features
•
•
•
4V drive
Low ON-resistance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
Unit
60
V
±20
V
3.5
A
PW≤10μs, duty cycle≤1%
14
A
When mounted on ceramic substrate (1200mm2×0.8mm)
1.6
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-003
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
4
Packing Type: TL
Marking
0.9
1
2
0.95
LOT No.
ZX
0.05
1.6
0.2
0.6
2.8
0.2
0.6
5
CPH6445-TL-E
0.15
2.9
6
TL
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Electrical Connection
1, 2, 5, 6
SANYO : CPH6
3
4
http://semicon.sanyo.com/en/network
61312 TKIM/21710PE TKIM TC-00002252 No. A1532-1/7
CPH6445
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
Conditions
Ratings
min
typ
Unit
max
60
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
V
1.2
1.2
1
μA
±10
μA
2.6
2.0
V
S
RDS(on)1
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
92
117
mΩ
RDS(on)2
ID=0.7A, VGS=4.5V
120
168
mΩ
RDS(on)3
ID=0.7A, VGS=4V
132
185
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
310
pF
40
pF
Crss
25
pF
6.0
ns
Rise Time
td(on)
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Qg
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0V
5.5
ns
27
ns
13
ns
6.8
nC
1.1
nC
1.4
nC
0.85
1.2
V
Switching Time Test Circuit
10V
0V
VDD=30V
VIN
ID=1.5A
RL=20Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
G
P.G
50Ω
CPH6445
S
Ordering Information
Device
CPH6445-TL-E
Package
Shipping
memo
CPH6
3,000pcs./reel
Pb Free
No. A1532-2/7
CPH6445
ID -- VDS
4.0
0.5
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
1.0
1.5
2.0
2.5
3.0
3.5
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
4.0
IT14867
RDS(on) -- Ta
ID=0.7A
270
1.5A
240
210
180
150
120
90
60
0
2
4
6
8
10
12
14
Source Current, IS -- A
=
Ta
°C
25
°C
0.1
7
5
75
5 70.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
Drain Current, ID -- A
SW Time -- ID
7
5 7 10
IT14870
Ciss, Coss, Crss -- pF
10
5
tr
20
40
60
80
100
120
140
160
IT14869
IS -- VSD
VGS=0V
1.0
7
5
3
2
0.1
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
IT14871
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
100
7
5
Coss
3
Crss
2
3
2
0.1
0
5
tf
td(on)
--20
7
2
7
--40
1000
td(off)
3
30
Diode Forward Voltage, VSD -- V
VDD=30V
VGS=10V
5
60
0.01
7
5
3
2
0.001
3
2
0.01
7
0.001 2 3
90
10
7
5
3
2
C
5°
--2
120
Ambient Temperature, Ta -- °C
VDS=10V
3
2
150
0
--60
16
3
2
1.0
7
5
7A
=0.
, ID
V
4
=
A
0.7
V GS
I D=
,
V
5
A
=4.
=1.5
V GS
V, I D
0
1
=
VGS
180
IT14868
| yfs | -- ID
7
5
210
C
25°C
300
240
--25°C
330
Ta=7
5°
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0.5
Ta=25°C
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, | yfs | -- S
0
260
360
30
0
1.0
IT14866
RDS(on) -- VGS
390
Switching Time, SW Time -- ns
1.5
1.0
0.2
0
2.0
25°
C
0.4
2.5
°C
VGS= 2.5V
0.6
3.0
--25
0.8
3.5
Ta
=7
5°
C
1.0
VDS=10V
4.5
Drain Current, ID -- A
1.2
V
3.0
4 .0 V
Drain Current, ID -- A
1.4
ID -- VGS
5.0
4.5V
15.0V 10.0V 8.0V
1.6
3.5
V
1.8
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
IT14872
10
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT14873
No. A1532-3/7
CPH6445
VGS -- Qg
10
VDS=30V
ID=3.5A
9
10
7
5
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
3
2
7
6
5
4
3
1
3
2
1
2
4
3
5
Total Gate Charge, Qg -- nC
7
IT14874
PD -- Ta
1.8
Allowable Power Dissipation, PD -- W
6
DC
10
op
era
0m
s
tio
Operation in this area
is limited by RDS(on).
3
2
10
μs
0μ
1m s
s
10
ms
10
ID=3.5A
1.0
7
5
2
0
IDP=14A (PW≤10μs)
3
2
0.1
7
5
0
ASO
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (1200mm2×0.8mm)
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT14875
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14876
No. A1532-4/7
CPH6445
Embossed Taping Specification
CPH6445-TL-E
No. A1532-5/7
CPH6445
Outline Drawing
CPH6445-TL-E
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1532-6/7
CPH6445
Note on usage : Since the CPH6445 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1532-7/7
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