Z ibo Seno Electronic Engineering Co., Ltd. ES2ABF – ES2JBF 2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Features ! ! ! ! ! ! ! A Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 50A Peak C B Low Power Loss Super-Fast Recovery Time Plastic Case Material has UL Flammability Classification Rating 94V-O F D G E Mechanical Data ! ! ! ! ! ! Case: SMBF, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.057 grams (approx.) Lead Free: For RoHS / Lead Free Version SMBF Min Dim A B C D E F G 4.20 Max 4.40 3.70 2.20 3.50 1.90 0.18 5.10 1.10 0.26 5.50 1.30 1.00 All Dimensions in mm Maximum Ratings and Electrical Characteristics Symbol Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current ES2ABF ES2BBF ES2CBF ES2DBF ES2EBF ES2GBF ES2JBF Unit VRRM VRWM VR 50 100 150 200 300 400 600 V VR(RMS) 35 70 105 140 210 280 420 V IO 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward Voltage @IF = 2.0A VFM @TA = 25°C @TA = 100°C IRM 5.0 100 µA Reverse Recovery Time (Note 1) trr 35 nS Typical Junction Capacitance (Note 2) Cj 45 pF RJL 65 °C/W Tj, TSTG -65 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage @TL = 100°C @TA=25°C unless otherwise specified Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 0.95 1.25 1.7 V Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. ES2ABF – ES2JBF 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. ES2ABF – ES2JBF 2.0 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) Single phase half wave Resistive or Inductive load 1.0 0 0 25 50 75 100 125 150 Tj = 25°C Pulse width = 300µs 10 ES2JBF 0.1 0.01 0 175 60 Single Half-Sine-Wave (JEDEC Method) 50 40 30 20 10 0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (µA) IFSM, PEAK FORWARD SURGE CURRENT (A) TL , LEAD TEMPERATURE ( ° C) Fig. 1 Forward Current Derating Curve 1 ES2EBF-ES2GBF - ES2ABF-ES2DBF 1.0 1000 Tj = 125° C 100 10 Tj = 25° C 1.0 0.1 0 100 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics NUMBER OF CYCLES AT 60Hz Fig. 3 Surge Current Derating Curve trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit ES2ABF – ES2JBF 2 of 2 www.senocn.com Alldatasheet