Vishay MBRF25H45CT-E3 Dual common cathode schottky rectifier Datasheet

MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
FEATURES
ITO-220AB
2
3
1
1
MBR25HxxCT
PIN 1
PIN 2
PIN 3
CASE
2
3
MBRF25HxxCT
PIN 1
PIN 2
PIN 3
TO-263AB
K
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
1
MBRB25HxxCT
PIN 1
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
2
PIN 2
•
•
•
•
•
•
•
•
K
MECHANICAL DATA
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.54 V, 0.60 V
IR
100 μA
TJ max.
175 °C
Package
TO-220AB, ITO-220AB, TO-263AB
Diode variations
Common cathode
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR25H35CT MBR25H45CT MBR25H60CT
Maximum repetitive peak reverse voltage
VRRM
35
45
60
Working peak reverse voltage
VRWM
35
45
60
Maximum DC blocking voltage
VDC
35
45
60
Max. average forward rectified current (fig. 1)
total device
per diode
30
IF(AV)
UNIT
V
A
15
Non-repetitive avalanche energy per diode at 25 °C,
IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20 μs waveform)
ERSM
25
20
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
VC
25
kV
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +175
°C
VAC
1500
V
Revision: 21-Nov-16
Document Number: 88789
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward
voltage per diode
IF = 15 A
VF (1)
IF = 30 A
Maximum reverse current per diode
IR (2)
MBR25H35CT
MBR25H45CT
TEST CONDITIONS
Rated VR
TYP.
MAX.
MBR25H60CT
TYP.
MAX.
TJ = 25 °C
-
0.64
-
0.70
TJ = 125 °C
0.50
0.54
0.56
0.60
TJ = 25 °C
-
0.74
-
0.85
UNIT
V
TJ = 125 °C
0.63
0.67
0.68
0.72
TJ = 25 °C
-
100
-
100
μA
TJ = 125 °C
6.0
20
4.0
20
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width  40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to case per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
1.5
4.5
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AB
MBR25H45CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF25H45CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB25H45CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB25H45CT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
MBR25H60CT-E3/4W (1)
1.85
4W
50/tube
Tube
TO-220AB
MBR25H45CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF25H45CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB25H45CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB25H45CTHE3/81 (1)
1.35
81
800/reel
Tape and reel
TO-263AB
MBRB25H45CTHE3_A/P (1)
1.35
P
50/tube
Tube
1.35
I
800/reel
Tape and reel
TO-263AB
PREFERRED P/N
MBRB25H45CTHE3_A/I
(1)
DELIVERY MODE
Note
(1) AEC-Q101 qualified
Revision: 21-Nov-16
Document Number: 88789
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
100
MBR, MBRB
30
MBRF
20
10
0
25
50
75
100
125
150
TJ = 150 °C
1
TJ = 125 °C
0.1
MBR25H35CT, MBR25H45CT
MBR25H60CT
0.01
0.001
TJ = 25 °C
0
175
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve (Total)
Fig. 4 - Typical Reverse Characteristics Per Diode
150
10 000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Junction Capacitance (pF)
125
100
75
50
25
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
MBR25H35CT, MBR25H45CT
MBR25H60CT
0
100
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
TJ = 150 °C
10
TJ = 25 °C
1
TJ = 125 °C
0.1
MBR25H35CT, MBR25H45CT
MBR25H60CT
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
10
0.0001
0
Peak Forward Surge Current (A)
Instantaneous Reverse Leakage
Current (mA)
Average Forward Current (A)
40
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 21-Nov-16
Document Number: 88789
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
3
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.110 (2.79)
0.100 (2.54)
0.035 (0.89)
0.025 (0.64)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
K
2
0.624 (15.85)
0.591 (15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
K
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
TO-263AB
0.245 (6.22)
MIN.
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.022 (0.56)
0.014 (0.36)
0.190 (4.83)
0.160 (4.06)
3
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.411 (10.45)
0.380 (9.65)
7° REF.
7° REF.
0.560 (14.22)
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.160 (4.06)
0.140 (3.56)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.145 (3.68)
0.135 (3.43)
7° REF.
0.076 (1.93) REF.
45° REF.
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 21-Nov-16
Document Number: 88789
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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
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Revision: 13-Jun-16
1
Document Number: 91000
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